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The role of dislocation scattering in n -type GaN films

Applied physics letters, 1998-08, Vol.73 (6), p.821-823

1998

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High-Speed Low-Loss Schottky-i-n InP-Based Optical Modulator for RF Photonics

IEEE photonics technology letters, 2007-03, Vol.19 (5), p.270-272

2007

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High-reflectivity ultraviolet AlGaN ∕ AlGaN distributed Bragg reflectors

Applied physics letters, 2006-04, Vol.88 (17), p.171101-171101-3

2006

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High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy

Journal of applied physics, 2002-07, Vol.92 (1), p.338-345

2002

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Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Journal of applied physics, 2000-01, Vol.87 (1), p.334-344

2000

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Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Journal of applied physics, 1999-03, Vol.85 (6), p.3222-3233

1999

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AlGaN/GaN heterostructures on insulating AlGaN nucleation layers

Applied physics letters, 1999-07, Vol.75 (3), p.388-390

1999

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Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates

Applied physics letters, 2002-08, Vol.81 (8), p.1456-1458

2002

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Self-heating of submicrometer InP-InGaAs DHBTs

IEEE electron device letters, 2004-06, Vol.25 (6), p.357-359, Article 357

2004

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SiGe differential transimpedance amplifier with 50-GHz bandwidth

IEEE journal of solid-state circuits, 2003-09, Vol.38 (9), p.1512-1517

2003

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An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth

IEEE journal of solid-state circuits, 2004-10, Vol.39 (10), p.1720-1723

2004

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Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates

IEEE electron device letters, 2003-02, Vol.24 (2), p.57-59

2003

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High power GaN/AlGaN/GaN HEMTs operating at 2 to 25 GHz grown by plasma-assisted MBE

Physica status solidi. A, Applied research, 2003-11, Vol.200 (1), p.175-178

2003

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Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices

physica status solidi (b), 1999-11, Vol.216 (1), p.381-389

1999

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Patterning GaN Microstructures by Polarity-Selective Chemical Etching

Japanese Journal of Applied Physics, 2003-12, Vol.42 (Part 2, No. 12A), p.L1405-L1407

2003

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GaN nanotip pyramids formed by anisotropic etching

Journal of applied physics, 2003-07, Vol.94 (1), p.650-653

2003

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Submicron AlGaN/GaN HEMTs with very high drain current density grown by plasma-assisted MBE on 6H-SiC

IEEE electron device letters, 2002-12, Vol.23 (12), p.691-693

2002

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Second-harmonic generation in periodically poled GaN

Applied physics letters, 2003-08, Vol.83 (6), p.1077-1079

2003

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Effect of dislocations on local transconductance in AlGaN/GaN heterostructures as imaged by scanning gate microscopy

Applied physics letters, 2003-12, Vol.83 (22), p.4559-4561

2003

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Scattering of electrons at threading dislocations in GaN

Journal of applied physics, 1998-04, Vol.83 (7), p.3656-3659

1998

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Manufacturable monolithically integrated InP dual-port coherent receiver for 100G PDM-QPSK applications

2011 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference, 2011, p.1-3

2011

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Process robustness and reproducibility of sub-mm wave flip-chip interconnect assembly

2015 IEEE 24th Electrical Performance of Electronic Packaging and Systems (EPEPS), 2015, p.141-144

2015

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Optical and Microstructural Properties of N- and Ga-Polarity GaN

MRS proceedings, 2003, Vol.798, Article Y5.52

2003

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Towards planar processing for InP DHBTs

International Conference onIndium Phosphide and Related Materials, 2003, 2003, p.57-60

2003

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A 1 W linear high-power InP balanced uni-traveling carrier photodetector

2011 37th European Conference and Exhibition on Optical Communication, 2011, p.1-3

2011

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The role of dislocation scattering in n -type GaN films

High-Speed Low-Loss Schottky-i-n InP-Based Optical Modulator for RF Photonics

High-reflectivity ultraviolet AlGaN ∕ AlGaN distributed Bragg reflectors

High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

AlGaN/GaN heterostructures on insulating AlGaN nucleation layers

Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates

Self-heating of submicrometer InP-InGaAs DHBTs

SiGe differential transimpedance amplifier with 50-GHz bandwidth

An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth

Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates

High power GaN/AlGaN/GaN HEMTs operating at 2 to 25 GHz grown by plasma-assisted MBE

Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices

Patterning GaN Microstructures by Polarity-Selective Chemical Etching

GaN nanotip pyramids formed by anisotropic etching

Submicron AlGaN/GaN HEMTs with very high drain current density grown by plasma-assisted MBE on 6H-SiC

Second-harmonic generation in periodically poled GaN

Effect of dislocations on local transconductance in AlGaN/GaN heterostructures as imaged by scanning gate microscopy

Scattering of electrons at threading dislocations in GaN

Manufacturable monolithically integrated InP dual-port coherent receiver for 100G PDM-QPSK applications

Process robustness and reproducibility of sub-mm wave flip-chip interconnect assembly

Optical and Microstructural Properties of N- and Ga-Polarity GaN

Towards planar processing for InP DHBTs

A 1 W linear high-power InP balanced uni-traveling carrier photodetector

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