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Electrical and Interfacial Characterization of Atomic Layer Deposited High- \kappa Gate Dielectrics on GaAs for Advanced CMOS Devices

IEEE transactions on electron devices, 2007-08, Vol.54 (8), p.1831-1837

2007

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Si tunnel transistors with a novel silicided source and 46mV/dec swing

2010 Symposium on VLSI Technology, 2010, p.121-122

2010

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Performance Evaluation of In0.53Ga0.47As Esaki Tunnel Diodes on Silicon and InP Substrates

IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2450-2456

2015

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Contact Resistance Reduction to FinFET Source/Drain Using Novel Dielectric Dipole Schottky Barrier Height Modulation Method

IEEE electron device letters, 2011-07, Vol.32 (7), p.862-864

2011

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Enhancement of the Flatband Modulation of Ni-Silicided Gates on Hf-Based Dielectrics

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2238-2245

2008

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Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2871-2877

2007

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Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-k/Metal Gate

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.2917-2923

2011

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Work Function Tuning and Material Characteristics of Lanthanide-Incorporated Metal Nitride Gate Electrodes for NMOS Device Applications

IEEE transactions on electron devices, 2006-08, Vol.53 (8), p.1877-1884

2006

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Raman spectroscopy studies of dopant activation and free electron density of In0.53Ga0.47As via sulfur monolayer doping

Physical chemistry chemical physics : PCCP, 2014-01, Vol.16 (14), p.6539

2014

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Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation

IEEE electron device letters, 2009-11, Vol.30 (11), p.1140-1142

2009

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Strained Si/SiGe Channel With Buried [Formula Omitted] for Improved Drivability, Gate Stack Integrity and Noise Performance

IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3292

2007

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Electrical and Interfacial Characterization of Atomic Layer Deposited High- [kappa] Gate Dielectrics on GaAs for Advanced CMOS Devices

IEEE transactions on electron devices, 2007-08, Vol.54 (8), p.1831

2007

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Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric on GaAs

Applied physics letters, 2007-04, Vol.90 (18)

2007

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Junction contact materials and interfaces in Si channel devices

MRS bulletin, 2011-02, Vol.36 (2), p.97-100

2011

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Thermal Immune NiGermanide for High Performance Ge MOSFETs on Ge-on- Si Substrate Utilizing [Formula Omitted] Alloy

IEEE transactions on electron devices, 2009-02, Vol.56 (2), p.348

2009

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Raman scattering study of LO phonon–plasmon coupled modes in p-type InGaAs

Journal of alloys and compounds, 2015-06, Vol.634, p.87-93

2015

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Dielectric dipole mitigated Schottky barrier height tuning using atomic layer deposited aluminum oxide for contact resistance reduction

Applied physics letters, 2011-09, Vol.99 (10), p.102108-102108-3

2011

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Determination of Free Electron Density in Sequentially Doped InxGa1-xAs by Raman Spectroscopy

Applied spectroscopy, 2015-02, Vol.69 (2), p.239-242

2015

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STLM: A Sidewall TLM Structure for Accurate Extraction of Ultralow Specific Contact Resistivity

IEEE electron device letters, 2013-09, Vol.34 (9), p.1082-1084

2013

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Mapping Defect Density in MBE Grown Epitaxial Layers on Si Substrate Using Esaki Diode Valley Characteristics

IEEE transactions on electron devices, 2014-06, Vol.61 (6), p.2049-2055

2014

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Wide V and V Tunability for Metal-Gated MOS Devices With HfLaO Gate Dielectrics

IEEE electron device letters, 2007-04, Vol.28 (4), p.258-260

2007

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Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy

Physical review applied, 2014-12, Vol.2 (6), Article 064010

2014

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Highly scaled (Lg∼56nm) gate-last Si tunnel field-effect transistors with ION>100μA/μm

Solid-state electronics, 2011-11, Vol.65-66, p.22-27

2011

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Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors

Thin solid films, 2011-10, Vol.520 (1), p.442-444

2011

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Characterization of DC, analog/RF, and low frequency noise in silicon-on-insulator nMOSFETs with different body-contact structures

Solid-state electronics, 2013-02, Vol.80, p.55-58

2013

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Electrical and Interfacial Characterization of Atomic Layer Deposited High- \kappa Gate Dielectrics on GaAs for Advanced CMOS Devices

Si tunnel transistors with a novel silicided source and 46mV/dec swing

Performance Evaluation of In0.53Ga0.47As Esaki Tunnel Diodes on Silicon and InP Substrates

Contact Resistance Reduction to FinFET Source/Drain Using Novel Dielectric Dipole Schottky Barrier Height Modulation Method

Enhancement of the Flatband Modulation of Ni-Silicided Gates on Hf-Based Dielectrics

Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices

Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-k/Metal Gate

Work Function Tuning and Material Characteristics of Lanthanide-Incorporated Metal Nitride Gate Electrodes for NMOS Device Applications

Raman spectroscopy studies of dopant activation and free electron density of In0.53Ga0.47As via sulfur monolayer doping

Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation

Strained Si/SiGe Channel With Buried [Formula Omitted] for Improved Drivability, Gate Stack Integrity and Noise Performance

Electrical and Interfacial Characterization of Atomic Layer Deposited High- [kappa] Gate Dielectrics on GaAs for Advanced CMOS Devices

Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric on GaAs

Junction contact materials and interfaces in Si channel devices

Thermal Immune NiGermanide for High Performance Ge MOSFETs on Ge-on- Si Substrate Utilizing [Formula Omitted] Alloy

Raman scattering study of LO phonon–plasmon coupled modes in p-type InGaAs

Dielectric dipole mitigated Schottky barrier height tuning using atomic layer deposited aluminum oxide for contact resistance reduction

Determination of Free Electron Density in Sequentially Doped InxGa1-xAs by Raman Spectroscopy

STLM: A Sidewall TLM Structure for Accurate Extraction of Ultralow Specific Contact Resistivity

Mapping Defect Density in MBE Grown Epitaxial Layers on Si Substrate Using Esaki Diode Valley Characteristics

Wide V and V Tunability for Metal-Gated MOS Devices With HfLaO Gate Dielectrics

Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy

Highly scaled (Lg∼56nm) gate-last Si tunnel field-effect transistors with ION>100μA/μm

Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors

Characterization of DC, analog/RF, and low frequency noise in silicon-on-insulator nMOSFETs with different body-contact structures

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