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Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene

Advanced materials (Weinheim), 2019-06, Vol.31 (23), p.e1807345-n/a

2019

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Ultraviolet communication technique and its application

Journal of semiconductors, 2021-08, Vol.42 (8), p.81801-47

2021

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Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

Applied physics letters, 2019-03, Vol.114 (9)

2019

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Enhancement of Heat Dissipation in Ultraviolet Light‐Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer

Advanced materials (Weinheim), 2019-07, Vol.31 (29), p.e1901624-n/a

2019

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Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

Light, science & applications, 2022-04, Vol.11 (1), p.88-12, Article 88

2022

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High‐Brightness Blue Light‐Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer

Advanced materials (Weinheim), 2018-07, Vol.30 (30), p.e1801608-n/a

2018

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Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire

Journal of the American Chemical Society, 2018-09, Vol.140 (38), p.11935-11941

2018

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Generation of multiple near-visible comb lines in an AlN microring via χ(2) and χ(3) optical nonlinearities

Applied physics letters, 2018-10, Vol.113 (17)

2018

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A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure

Applied physics letters, 2016-12, Vol.109 (24)

2016

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275 nm Deep Ultraviolet AlGaN-Based Micro-LED Arrays for Ultraviolet Communication

IEEE photonics journal, 2022-02, Vol.14 (1), p.1-5

2022

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GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy

Optics letters, 2020-01, Vol.45 (1), p.121

2020

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Spatially resolved study of quantum efficiency droop in InGaN light-emitting diodes

Applied physics letters, 2012-12, Vol.101 (25)

2012

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Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography

Journal of applied physics, 2014-03, Vol.115 (12)

2014

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Atomic‐Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD

Small (Weinheim an der Bergstrasse, Germany), 2022-04, Vol.18 (16), p.e2200057-n/a

2022

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Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission

Journal of applied physics, 2019-12, Vol.126 (24)

2019

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Numerical simulation of the thermal behaviors for two typical damping alloys during selective laser melting

Journal of manufacturing processes, 2023-09, Vol.101, p.1419-1430

2023

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Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate

Applied physics letters, 2011-08, Vol.99 (9), p.091104-091104-3

2011

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AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

Journal of crystal growth, 2014-06, Vol.395, p.9-13

2014

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Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

Light, science & applications, 2022-04, Vol.11 (1), p.119-119, Article 119

2022

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Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography

Applied physics letters, 2014-07, Vol.105 (1)

2014

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Advances and prospects in nitrides based light-emitting-diodes

Journal of semiconductors, 2016-06, Vol.37 (6), p.1-14

李晋闽刘喆刘志强闫建昌魏同波伊晓燕王军喜

2016

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Interplay of point defects, extended defects, and carrier localization in the efficiency droop of InGaN quantum wells light-emitting diodes investigated using spatially resolved electroluminescence and photoluminescence

Journal of applied physics, 2014-01, Vol.115 (2)

2014

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Effects of Localized Interface Phonons on Heat Conductivity in Ingredient Heterogeneous Solids

Chinese physics letters, 2023-03, Vol.40 (3), p.36801-24

2023

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Growth mechanism of AlN on hexagonal BN/sapphire substrate by metal–organic chemical vapor deposition

CrystEngComm, 2017, Vol.19 (39), p.5849-5856

2017

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Quasi‐2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light‐Emitting Diodes

Advanced science, 2020-08, Vol.7 (15), p.2001272-n/a

2020

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Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene

Ultraviolet communication technique and its application

Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

Enhancement of Heat Dissipation in Ultraviolet Light‐Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer

Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

High‐Brightness Blue Light‐Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer

Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire

Generation of multiple near-visible comb lines in an AlN microring via χ(2) and χ(3) optical nonlinearities

A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure

275 nm Deep Ultraviolet AlGaN-Based Micro-LED Arrays for Ultraviolet Communication

GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy

Spatially resolved study of quantum efficiency droop in InGaN light-emitting diodes

Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography

Atomic‐Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD

Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission

Numerical simulation of the thermal behaviors for two typical damping alloys during selective laser melting

Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate

AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography

Advances and prospects in nitrides based light-emitting-diodes

Interplay of point defects, extended defects, and carrier localization in the efficiency droop of InGaN quantum wells light-emitting diodes investigated using spatially resolved electroluminescence and photoluminescence

Effects of Localized Interface Phonons on Heat Conductivity in Ingredient Heterogeneous Solids

Growth mechanism of AlN on hexagonal BN/sapphire substrate by metal–organic chemical vapor deposition

Quasi‐2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light‐Emitting Diodes

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