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Gold–Gold Bonding: The Key to Stabilizing the 19-Electron Ternary Phases LnAuSb (Ln = La–Nd and Sm)

Journal of the American Chemical Society, 2015-01, Vol.137 (3), p.1282-1289

2015

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AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Oxide Insulator Grown by Photoelectrochemical Oxidation Method

IEEE electron device letters, 2008-04, Vol.29 (4), p.284-286

2008

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Time-Since-Death and Its Effect on Wood from Beetle-Killed Engelmann Spruce in Southwest Colorado

Forest science, 2018-05, Vol.64 (3), p.316-323

2018

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Growth of high mobility GaN by ammonia-molecular beam epitaxy

Applied physics letters, 1999-04, Vol.74 (16), p.2373-2374

1999

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Managing Expectations for Aquaponics in the Classroom: Enhancing Academic Learning and Teaching an Appreciation for Aquatic Resources

Fisheries, 2014-11, Vol.39 (11), p.525-530

2014

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Small-Scale Recirculating Aquaculture System for Global Aquaculture Education and Industry Development

Journal of applied aquaculture, 2015-10, Vol.27 (4), p.331-341

2015

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The management of an ectopic ovary in the inguinal canal: literature review and discussion

Pediatric surgery international, 2014-10, Vol.30 (10), p.1075-1078

2014

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Critical Chain Method in Traditional Project and Portfolio Management Situations

International journal of information technology project management, 2014-07, Vol.5 (3), p.67-83

2014

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Defect reduction in GaN epilayers and HFET structures grown on (0 0 0 1)sapphire by ammonia MBE

Journal of crystal growth, 2001-09, Vol.230 (3), p.584-589

2001

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Molecular signatures of two cattail species, Typha domingensis and Typha latifolia (Typhaceae), in South Florida

Molecular phylogenetics and evolution, 2008-10, Vol.49 (1), p.368-376

2008

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Growth, selectivity and adhesion of CVD-deposited copper from Cu +1 (hexafluoroacetylacetonate trimethylvinylsilane) and dichlorodimethylsilane

Thin solid films, 1995-12, Vol.270 (1), p.483-488

1995

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Conductivity imaging of the erosion pattern for ZnO prepared by planar R.F. magnetron sputtering

Thin solid films, 1986-02, Vol.136 (1), p.135-139

Webb, James B.

1986

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Two-step epitaxial lateral overgrowth of GaN

Materials chemistry and physics, 2003-09, Vol.82 (1), p.55-60

2003

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Gold–Gold Bonding: The Key to Stabilizing the 19-Electron Ternary Phases Ln AuSb ( Ln = La–Nd and Sm)

Journal of the American Chemical Society, 2015-01, Vol.137 (3), p.1282-1289

2015

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High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 9A), p.5563-5564

2003

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Wet etching for improved GaN-based HBT performance

Physica status solidi. C, 2005-01, Vol.2 (7), p.2680-2683

2005

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ChemInform Abstract: Gold-Gold Bonding: The Key to Stabilizing the 19-Electron Ternary Phases LnAuSb (Ln: La-Nd and Sm)

ChemInform, 2015-05, Vol.46 (18), p.no-no

2015

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Growth of high mobility GaN and AlGaN/GaN high electron mobility transistor structures on 4H-SiC by ammonia molecular-beam epitaxy

Applied physics letters, 2001-06, Vol.78 (24), p.3845-3847

2001

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Effect of hydrogen on the deposition rate for planar rf magnetron sputtering of hydrogenated amorphous silicon

Journal of applied physics, 1982-12, Vol.53 (12), p.9043-9048

Webb, James B.

1982

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Fourth Canadian Semiconductor Technology Conference Organizers Comments

Canadian journal of physics, 1989-04, Vol.67 (4), p.173-173

1989

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Influence on deposition conditions on hydrogenated amorphous silicon prepared by rf planar magnetron sputtering

Journal of applied physics, 1983-06, Vol.54 (6), p.3282-3285

1983

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Educational Aid in Australia or in Asia

Australian Outlook, 1973-04, Vol.27 (1), p.34-39

Webb, James B.

1973

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High Performance HFET Devices on Sapphire and SiC: Passivation with AlN

MRS proceedings, 2002, Vol.743, Article L9.6

2002

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Magnetron sputter epitaxy and characterization of InSb/In 1− xAl xSb strained layer superlattices

Journal of crystal growth, 1994, Vol.137 (3), p.405-414

1994

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InSb/In1− x Al x Sb strained-layer superlattices grown by magnetron sputter epitaxy

Applied physics letters, 1992-02, Vol.60 (8), p.998-1000

1992

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Gold–Gold Bonding: The Key to Stabilizing the 19-Electron Ternary Phases LnAuSb (Ln = La–Nd and Sm)

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Oxide Insulator Grown by Photoelectrochemical Oxidation Method

Time-Since-Death and Its Effect on Wood from Beetle-Killed Engelmann Spruce in Southwest Colorado

Growth of high mobility GaN by ammonia-molecular beam epitaxy

Managing Expectations for Aquaponics in the Classroom: Enhancing Academic Learning and Teaching an Appreciation for Aquatic Resources

Small-Scale Recirculating Aquaculture System for Global Aquaculture Education and Industry Development

The management of an ectopic ovary in the inguinal canal: literature review and discussion

Critical Chain Method in Traditional Project and Portfolio Management Situations

Defect reduction in GaN epilayers and HFET structures grown on (0 0 0 1)sapphire by ammonia MBE

Molecular signatures of two cattail species, Typha domingensis and Typha latifolia (Typhaceae), in South Florida

Growth, selectivity and adhesion of CVD-deposited copper from Cu +1 (hexafluoroacetylacetonate trimethylvinylsilane) and dichlorodimethylsilane

Conductivity imaging of the erosion pattern for ZnO prepared by planar R.F. magnetron sputtering

Two-step epitaxial lateral overgrowth of GaN

Gold–Gold Bonding: The Key to Stabilizing the 19-Electron Ternary Phases Ln AuSb ( Ln = La–Nd and Sm)

High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors

Wet etching for improved GaN-based HBT performance

ChemInform Abstract: Gold-Gold Bonding: The Key to Stabilizing the 19-Electron Ternary Phases LnAuSb (Ln: La-Nd and Sm)

Growth of high mobility GaN and AlGaN/GaN high electron mobility transistor structures on 4H-SiC by ammonia molecular-beam epitaxy

Effect of hydrogen on the deposition rate for planar rf magnetron sputtering of hydrogenated amorphous silicon

Fourth Canadian Semiconductor Technology Conference Organizers Comments

Influence on deposition conditions on hydrogenated amorphous silicon prepared by rf planar magnetron sputtering

Educational Aid in Australia or in Asia

High Performance HFET Devices on Sapphire and SiC: Passivation with AlN

Magnetron sputter epitaxy and characterization of InSb/In 1− xAl xSb strained layer superlattices

InSb/In1− x Al x Sb strained-layer superlattices grown by magnetron sputter epitaxy

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