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Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter

IEEE transactions on nanotechnology, 2002-12, Vol.1 (4), p.195-200

2002

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The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs

Solid-state electronics, 2004-08, Vol.48 (8), p.1337-1346

2004

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Impact of single charge trapping in nano-MOSFETs-electrostatics versus transport effects

IEEE transactions on nanotechnology, 2005-05, Vol.4 (3), p.339-344

2005

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Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs

Microelectronics and reliability, 2004-07, Vol.44 (7), p.1101-1107

2004

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A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs

Journal of computational electronics, 2003-12, Vol.2 (2-4), p.163-167

2003

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Degeneracy and High Doping Effects in Deep Sub-Micron Relaxed and Strained Si n-MOSFETs

Journal of computational electronics, 2003-12, Vol.2 (2-4), p.475-479

2003

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Simulation study of the 20nm gate-length Ge implant-free quantum well p-MOSFET

Microelectronic engineering, 2011-04, Vol.88 (4), p.362-365

2011

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Beyond SiO2 technology: Simulation of the impact of high-κ dielectrics on mobility

Journal of non-crystalline solids, 2007-04, Vol.353 (5-7), p.630-634

2007

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Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET

Microelectronic engineering, 2011-04, Vol.88 (4), p.362-365

2011

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Simulations of Scaled Sub-100 nm Strained Si/SiGe p-Channel MOSFETs

Journal of computational electronics, 2003-12, Vol.2 (2-4), p.363-368

2003

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3-D Monte Carlo Simulation of the Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs

IEEE transactions on nanotechnology, 2007-01, Vol.6 (1), p.48-55

2007

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Quantum corrections in the simulation of decanano MOSFETs

Solid-state electronics, 2003-07, Vol.47 (7), p.1141-1145

2003

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Beyond SiO 2 technology: Simulation of the impact of high- κ dielectrics on mobility

Journal of non-crystalline solids, 2007, Vol.353 (5), p.630-634

2007

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GENERAL PLANT ENVIRONMENTAL PHYSIOLOGY

Journal of experimental botany, 1998-05, Vol.49, p.27-36

Watling, J.R.

1998

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Improved effective mobility extraction in MOSFETs

Solid-state electronics, 2009-12, Vol.53 (12), p.1252-1256

2009

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Impact of scattering in ‘atomistic’ device simulations

Solid-state electronics, 2005-05, Vol.49 (5), p.733-739

2005

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The Use of Quantum Potentials for Confinement and Tunnelling in Semiconductor Devices

Journal of computational electronics, 2002-12, Vol.1 (4), p.503-513

2002

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Monte carlo study of mobility in Si devices with -based oxides

Materials science in semiconductor processing, 2006-12, Vol.9 (6), p.995-999

2006

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Responses of Rainforest Understorey Plants to Excess Light during Sunflecks

Functional plant biology : FPB, 1997, Vol.24 (1), p.17

1997

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Monte carlo study of mobility in Si devices with HfO 2 -based oxides

Materials science in semiconductor processing, 2006, Vol.9 (6), p.995-999

2006

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Can the Density Gradient Approach Describe the Source-Drain Tunnelling in Decanano Double-Gate MOSFETs?

Journal of computational electronics, 2002-07, Vol.1 (1-2), p.289-293

2002

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A semi-empirical technique for simulating mesoscopic quantum transport in warped band structures

Microelectronic engineering, 1999-06, Vol.47 (1), p.369-371

1999

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Drift diffusion and hydrodynamic simulations of Si/SiGe p-MOSFETs

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-03, Vol.72 (2), p.180-183

2000

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Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-/spl kappa/ gate stack materials

2005 International Conference On Simulation of Semiconductor Processes and Devices, 2005, p.27-30

2005

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Excessive Over-Relaxation Method for Multigrid Poisson Solvers

Journal of computational electronics, 2002-10, Vol.1 (3), p.341-345

2002

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Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter

The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs

Impact of single charge trapping in nano-MOSFETs-electrostatics versus transport effects

Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs

A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs

Degeneracy and High Doping Effects in Deep Sub-Micron Relaxed and Strained Si n-MOSFETs

Simulation study of the 20nm gate-length Ge implant-free quantum well p-MOSFET

Beyond SiO2 technology: Simulation of the impact of high-κ dielectrics on mobility

Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET

Simulations of Scaled Sub-100 nm Strained Si/SiGe p-Channel MOSFETs

3-D Monte Carlo Simulation of the Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs

Quantum corrections in the simulation of decanano MOSFETs

Beyond SiO 2 technology: Simulation of the impact of high- κ dielectrics on mobility

GENERAL PLANT ENVIRONMENTAL PHYSIOLOGY

Improved effective mobility extraction in MOSFETs

Impact of scattering in ‘atomistic’ device simulations

The Use of Quantum Potentials for Confinement and Tunnelling in Semiconductor Devices

Monte carlo study of mobility in Si devices with -based oxides

Responses of Rainforest Understorey Plants to Excess Light during Sunflecks

Monte carlo study of mobility in Si devices with HfO 2 -based oxides

Can the Density Gradient Approach Describe the Source-Drain Tunnelling in Decanano Double-Gate MOSFETs?

A semi-empirical technique for simulating mesoscopic quantum transport in warped band structures

Drift diffusion and hydrodynamic simulations of Si/SiGe p-MOSFETs

Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-/spl kappa/ gate stack materials

Excessive Over-Relaxation Method for Multigrid Poisson Solvers

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