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Trends in EM susceptibility of IT equipment

IEEE transactions on electromagnetic compatibility, 2004-08, Vol.46 (3), p.390-395

2004

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2746 A Phase 2 open-label, multicenter study of single-agent rucaparib in the treatment of patients with relapsed ovarian cancer and a deleterious BRCA mutation

European journal of cancer (1990), 2015-09, Vol.51, p.S545-S545

2015

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Demonstration of high-speed staggered lineup GaAsSb-InP unitraveling carrier photodiodes

IEEE photonics technology letters, 2005-03, Vol.17 (3), p.651-653

2005

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Extraction of the average collector velocity in high-speed "Type-II" InP-GaAsSb-InP DHBTs

IEEE electron device letters, 2004-12, Vol.25 (12), p.769-771

2004

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InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs

IEEE transactions on electron devices, 2001-11, Vol.48 (11), p.2631-2639

2001

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Heavily carbon-doped GaAsSb grown on InP for HBT applications

Journal of crystal growth, 2000-12, Vol.221 (1), p.59-65

2000

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High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

Journal of luminescence, 2016-08, Vol.176, p.47-51

2016

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659P Rucaparib population pharmacokinetics (PPK) and exposure-response (ER) analyses in patients (pts) with metastatic castration-resistant prostate cancer (mCRPC) in TRITON2

Annals of oncology, 2020-09, Vol.31, p.S533-S534

2020

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RDS characterization of GaAsSb and GaSb grown by MOVPE

Journal of crystal growth, 2003-02, Vol.248, p.249-253

2003

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Control of GaAs nanowire morphology by group III precursor chemistry

Journal of crystal growth, 2011-06, Vol.325 (1), p.5-9

2011

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Genomic profiling of circulating tumour DNA (ctDNA) and tumour tissue for the evaluation of rucaparib in metastatic castration-resistant prostate cancer (mCRPC)

Annals of oncology, 2018-10, Vol.29, p.viii273-viii273

2018

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300 GHz InP/GaAsSb/InP double HBTs with high current capability and BVCEO>6 V

IEEE electron device letters, 2001-08, Vol.22 (8), p.361

2001

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Growth of InAsSb/InAs MQWs on GaSb for mid-IR photodetector applications

Journal of crystal growth, 2009-07, Vol.311 (14), p.3563-3567

2009

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15-nm base type-II InP/GaAsSb/InP DHBTs with FT = 384 GHz and a 6-V BVCEO

IEEE transactions on electron devices, 2006-03, Vol.53 (3), p.559-561

2006

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Growth of InAsSb/InPSb heterojunctions for mid-IR detector applications

Journal of crystal growth, 2008-11, Vol.310 (23), p.4858-4861

2008

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Atomic ordering in GaAsSb (0 0 1) grown by metalorganic vapor phase epitaxy

Journal of crystal growth, 2009-09, Vol.311 (19), p.4391-4397

2009

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15-nm base type-II InP/GaAsSb/InP DHBTs with F/sub T/=384 GHz and a 6-V BV/sub CEO

IEEE transactions on electron devices, 2006-03, Vol.53 (3), p.559-561

2006

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Flow modulation epitaxy of ZnO films on sapphire substrates

Journal of crystal growth, 2008-08, Vol.310 (18), p.4050-4053

2008

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Characterization of interfacial dopant layer for high-purity InP grown by MOCVD

Journal of crystal growth, 1997-12, Vol.182 (1-2), p.23-29

1997

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Numerical optimization of an optical showerhead reactor design for organometallic vapor phase epitaxy

Journal of crystal growth, 2006-12, Vol.297 (2), p.345-351

2006

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Control of residual impurity incorporation in tertiarybutylarsine-grown GaAs

Journal of crystal growth, 1991, Vol.107 (1), p.342-347

1991

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Surface modifications induced by bismuth on (0 0 1) GaAs surfaces

Journal of crystal growth, 2005-04, Vol.277 (1), p.85-90

2005

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Antimony segregation in GaAs-based multiple quantum well structures

Journal of crystal growth, 2003-06, Vol.254 (1), p.28-34

2003

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Microstructure of ordered nanodomains induced by Bi surfactant in OMVPE-grown GaAsSb

Journal of crystal growth, 2006-01, Vol.287 (2), p.541-544

2006

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Chemical kinetics and design of gas inlets for III–V growth by MOVPE in a quartz showerhead reactor

Journal of crystal growth, 2004-12, Vol.272 (1), p.47-51

2004

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Trends in EM susceptibility of IT equipment

2746 A Phase 2 open-label, multicenter study of single-agent rucaparib in the treatment of patients with relapsed ovarian cancer and a deleterious BRCA mutation

Demonstration of high-speed staggered lineup GaAsSb-InP unitraveling carrier photodiodes

Extraction of the average collector velocity in high-speed "Type-II" InP-GaAsSb-InP DHBTs

InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs

Heavily carbon-doped GaAsSb grown on InP for HBT applications

High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

659P Rucaparib population pharmacokinetics (PPK) and exposure-response (ER) analyses in patients (pts) with metastatic castration-resistant prostate cancer (mCRPC) in TRITON2

RDS characterization of GaAsSb and GaSb grown by MOVPE

Control of GaAs nanowire morphology by group III precursor chemistry

Genomic profiling of circulating tumour DNA (ctDNA) and tumour tissue for the evaluation of rucaparib in metastatic castration-resistant prostate cancer (mCRPC)

300 GHz InP/GaAsSb/InP double HBTs with high current capability and BVCEO>6 V

Growth of InAsSb/InAs MQWs on GaSb for mid-IR photodetector applications

15-nm base type-II InP/GaAsSb/InP DHBTs with FT = 384 GHz and a 6-V BVCEO

Growth of InAsSb/InPSb heterojunctions for mid-IR detector applications

Atomic ordering in GaAsSb (0 0 1) grown by metalorganic vapor phase epitaxy

15-nm base type-II InP/GaAsSb/InP DHBTs with F/sub T/=384 GHz and a 6-V BV/sub CEO

Flow modulation epitaxy of ZnO films on sapphire substrates

Characterization of interfacial dopant layer for high-purity InP grown by MOCVD

Numerical optimization of an optical showerhead reactor design for organometallic vapor phase epitaxy

Control of residual impurity incorporation in tertiarybutylarsine-grown GaAs

Surface modifications induced by bismuth on (0 0 1) GaAs surfaces

Antimony segregation in GaAs-based multiple quantum well structures

Microstructure of ordered nanodomains induced by Bi surfactant in OMVPE-grown GaAsSb

Chemical kinetics and design of gas inlets for III–V growth by MOVPE in a quartz showerhead reactor

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