UB Paderborn / Katalog / Suche / in CDI

Optical detection of electron paramagnetic resonance in room-temperature electron-irradiated ZnO

Physical review. B, Condensed matter and materials physics, 2005-03, Vol.71 (12), p.125210.1-125210.6, Article 125210

2005

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Understanding the Jahn–Teller distortions for the divacancy and the vacancy–group-V-atom pair in silicon

Physica. B, Condensed matter, 2006-04, Vol.376, p.50-53

Watkins, G.D.

2006

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Intrinsic defects in ZnO: A study using optical detection of electron paramagnetic resonance

Physica. B, Condensed matter, 2006-04, Vol.376, p.677-681

2006

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Intrinsic defects in II–VI semiconductors

Journal of crystal growth, 1996-02, Vol.159 (1-4), p.338-344

Watkins, G.D.

1996

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Defects produced in ZnO by 2.5-MeV electron irradiation at 4.2 K: Study by optical detection of electron paramagnetic resonance

Physical review. B, Condensed matter and materials physics, 2004-03, Vol.69 (11), Article 115212

2004

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Identification of an interstitial carbon-interstitial oxygen complex in silicon

Applied physics letters, 1987-10, Vol.51 (14), p.1103-1105

1987

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Detection of interstitial Ga in GaN

Physical review letters, 2000-09, Vol.85 (13), p.2761-2764

2000

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Optically detected electron paramagnetic resonance of AlN single crystals

Physical review. B, Condensed matter, 1999-01, Vol.59 (3), p.1937-1947

1999

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Optical detection of electron paramagnetic resonance for intrinsic defects produced in ZnO by 2.5-MeV electron irradiation in situ at 4.2 K

Physical review. B, Condensed matter and materials physics, 2005-07, Vol.72 (3), Article 035203

2005

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Structure-sensitive spectroscopy of transition-metal-hydrogen complexes in silicon

Physical review letters, 1993-06, Vol.70 (24), p.3816-3819

1993

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Native Defects and their Interactions with Impurities in Silicon

MRS proceedings, 1997, Vol.469, Article 139

Watkins, G. D.

1997

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Bistable defect in silicon: the interstitial-carbon-substitutional-carbon pair

Physical review letters, 1988-02, Vol.60 (5), p.460-463

1988

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Metastable defects in silicon: hints for DX and EL2?

Semiconductor science and technology, 1991-10, Vol.6 (10B), p.B111-B120

Watkins, G D

1991

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Hydrogen-related defects in polycrystalline CVD diamond

Physical review. B, Condensed matter, 1996-09, Vol.54 (11), p.7881-7890

1996

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Structure of gold in silicon

Physical review letters, 1991-08, Vol.67 (9), p.1149-1152

1991

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Passivation of shallow impurities in Si by annealing in H2 at high temperature

Applied physics letters, 1991-10, Vol.59 (17), p.2121-2123

1991

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Optically detected electron paramagnetic resonance of arsenic antisites in low-temperature GaAs layers

Applied physics letters, 1992-02, Vol.60 (6), p.718-720

1992

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EPR of defects in semiconductors: Past, present, future

Physics of the solid state, 1999-05, Vol.41 (5), p.746-750

Watkins, G. D.

1999

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Optically Induced Migration of Interstitial Zinc in ZnSe: Caught in the Act

Physical review letters, 1998-09, Vol.81 (10), p.2084-2087

1998

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Identification of a bistable defect in silicon: the carbon interstitial-carbon substitutional pair

Applied physics letters, 1987-10, Vol.51 (15), p.1155-1157

1987

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Optical detection of magnetic resonance in electron-irradiated GaN

Physical review. B, Condensed matter, 1997-04, Vol.55 (16), p.R10177-R10180

1997

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Electron paramagnetic resonance of a multistable interstitial-carbon-substitutional-phosphorus pair in silicon

Applied physics letters, 1991-05, Vol.58 (19), p.2144-2146

1991

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Alignment of thermal donors in Si by uniaxial stress

Journal of applied physics, 1987, Vol.61 (1), p.346-353

1987

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Observation by optically detected magnetic resonance of Frenkel pairs in irradiated ZnSe

Physical review letters, 1986-05, Vol.56 (21), p.2310-2313

1986

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Optical detection of electron paramagnetic resonance in electron-irradiated GaN

Physical review. B, Condensed matter, 1999-05, Vol.59 (19), p.12479-12486

1999

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Optical detection of electron paramagnetic resonance in room-temperature electron-irradiated ZnO

Understanding the Jahn–Teller distortions for the divacancy and the vacancy–group-V-atom pair in silicon

Intrinsic defects in ZnO: A study using optical detection of electron paramagnetic resonance

Intrinsic defects in II–VI semiconductors

Defects produced in ZnO by 2.5-MeV electron irradiation at 4.2 K: Study by optical detection of electron paramagnetic resonance

Identification of an interstitial carbon-interstitial oxygen complex in silicon

Detection of interstitial Ga in GaN

Optically detected electron paramagnetic resonance of AlN single crystals

Optical detection of electron paramagnetic resonance for intrinsic defects produced in ZnO by 2.5-MeV electron irradiation in situ at 4.2 K

Structure-sensitive spectroscopy of transition-metal-hydrogen complexes in silicon

Native Defects and their Interactions with Impurities in Silicon

Bistable defect in silicon: the interstitial-carbon-substitutional-carbon pair

Metastable defects in silicon: hints for DX and EL2?

Hydrogen-related defects in polycrystalline CVD diamond

Structure of gold in silicon

Passivation of shallow impurities in Si by annealing in H2 at high temperature

Optically detected electron paramagnetic resonance of arsenic antisites in low-temperature GaAs layers

EPR of defects in semiconductors: Past, present, future

Optically Induced Migration of Interstitial Zinc in ZnSe: Caught in the Act

Identification of a bistable defect in silicon: the carbon interstitial-carbon substitutional pair

Optical detection of magnetic resonance in electron-irradiated GaN

Electron paramagnetic resonance of a multistable interstitial-carbon-substitutional-phosphorus pair in silicon

Alignment of thermal donors in Si by uniaxial stress

Observation by optically detected magnetic resonance of Frenkel pairs in irradiated ZnSe

Optical detection of electron paramagnetic resonance in electron-irradiated GaN

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