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A 38 dB Gain, Low-Loss, Flat Array Antenna for 320-400 GHz Enabled by Silicon-on-Insulator Micromachining

IEEE transactions on antennas and propagation, 2020-06, Vol.68 (6), p.4450-4458

2020

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Low-Profile Terahertz Radar Based on Broadband Leaky-Wave Beam Steering

IEEE transactions on terahertz science and technology, 2017-01, Vol.7 (1), p.60-69

2017

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IEEE_Xplore

Improved Algorithm to Trace Boundary Curves on Two-Dimensional Square Meshes

International journal of automation technology, 2020-09, Vol.14 (5), p.816-823

2020

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See-through Detection and 3D Reconstruction Using Terahertz Leaky-Wave Radar Based on Sparse Signal Processing

Journal of infrared, millimeter and terahertz waves, 2018-02, Vol.39 (2), p.210-221

2018

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Photonics-Based Near-Field Measurement and Far-Field Characterization for 300-GHz Band Antenna Testing

IEEE Open Journal of Antennas and Propagation, 2022, Vol.3, p.24-31

2022

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High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications

Nanomaterials (Basel, Switzerland), 2021-02, Vol.11 (2), p.392

2021

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Effect of Gate-Recess Structure on Electron Transport in InP-Based High Electron Mobility Transistors Studied by Monte Carlo Simulations

Japanese Journal of Applied Physics, 2011-10, Vol.50 (10), p.104302-104302-5

2011

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Effect of Gate-Recess Structure on Electron Transport in InP-Based High Electron Mobility Transistors Studied by Monte Carlo Simulations

Japanese Journal of Applied Physics, 2011-10, Vol.50 (10R), p.104302

2011

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A 273-301-GHz Amplifier With 21-dB Peak Gain in 65-nm Standard Bulk CMOS

IEEE microwave and wireless components letters, 2019-05, Vol.29 (5), p.342-344

2019

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IEEE_Xplore

Investigation of the growth mechanism and crystallographic structures of GaSb dots nucleation layer and GaSb thin film grown on Si(001) substrate by molecular beam epitaxy

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2022-05, Vol.40 (3)

2022

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A 38 dBi Gain, Low-Loss, Flat Array Antenna for 320 GHz to 400 GHz Enabled by Silicon-On-Insulator Micromachining

IEEE transactions on antennas and propagation, 2020, Vol.68 (6), p.4450

2020

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Suppression of Multiple Reflection by Metasurface Absorber in 120-GHz-band Close-Proximity Wireless Link

2022 International Symposium on Antennas and Propagation (ISAP), 2022, p.491-492

2022

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Optimally Matched 189-232 GHz 6.8 dBm Output Power CMOS Frequency Doubler

International journal of RF and microwave computer-aided engineering, 2024-03, Vol.2024, p.1-7

2024

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Research and Development of GaN-based HEMTs for Millimeter- and Terahertz-Wave Wireless Communications

2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2020, p.19-21

2020

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A 260-GHz Four-Way Phase Compensated CMOS Frequency Multiplier Chain

IEEE transactions on terahertz science and technology, 2023-01, Vol.13 (1), p.20-27

2023

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IEEE_Xplore

Analysis of performances of InSb HEMTs using quantum-corrected Monte Carlo simulation

2012 International Conference on Indium Phosphide and Related Materials, 2012, p.237-240

2012

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IEEE_Xplore

Effect of Strain in Channel on Electron Transport Properties of Ga1−xInxSb High Electron Mobility Transistor Structures with Strained‐Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8)

2023

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Effect of Strain in Channel on Electron Transport Properties of Ga1−x In x Sb High Electron Mobility Transistor Structures with Strained‐Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8), p.n/a

2023

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Effect of Strain in Channel on Electron Transport Properties of Ga 1− x In x Sb High Electron Mobility Transistor Structures with Strained‐Al 0.40 In 0.60 Sb/Al 0.25 In 0.75 Sb Stepped Buffer

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8)

2023

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Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(1 0 0) substrate by molecular beam epitaxy

Journal of crystal growth, 2019-02, Vol.507, p.357-361

2019

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Waveguide-Type Multiplexer for Multiline Observation of Atmospheric Molecules using Millimeter-Wave Spectroradiometer

Journal of infrared, millimeter and terahertz waves, 2020-12, Vol.41 (12), p.1530-1555

2020

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Effects of Ga-induced reconstructed surfaces and atomic steps on the morphology of GaSb islands on Si(100)

Applied surface science, 2015-10, Vol.351, p.686-692

2015

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Effects of Heterointerface Flatness on Device Performance of InP-Based High Electron Mobility Transistor

Japanese Journal of Applied Physics, 2007-04, Vol.46 (4S), p.2325

2007

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Implementation of SIW Cavity in Commercial CMOS Technology for Sub-Terahertz Band Applications

2023 IEEE/MTT-S International Microwave Symposium - IMS 2023, 2023, p.493-496

2023

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IEEE_Xplore

200 GHz-band Low-loss Half-Mode SIW CMOS Interconnects and Transmission Lines for Sub-Terahertz Frequency Band Applications

2023 IEEE/MTT-S International Microwave Symposium - IMS 2023, 2023, p.497-500

2023

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IEEE_Xplore

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A 38 dB Gain, Low-Loss, Flat Array Antenna for 320-400 GHz Enabled by Silicon-on-Insulator Micromachining

Low-Profile Terahertz Radar Based on Broadband Leaky-Wave Beam Steering

Improved Algorithm to Trace Boundary Curves on Two-Dimensional Square Meshes

See-through Detection and 3D Reconstruction Using Terahertz Leaky-Wave Radar Based on Sparse Signal Processing

Photonics-Based Near-Field Measurement and Far-Field Characterization for 300-GHz Band Antenna Testing

High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications

Effect of Gate-Recess Structure on Electron Transport in InP-Based High Electron Mobility Transistors Studied by Monte Carlo Simulations

Effect of Gate-Recess Structure on Electron Transport in InP-Based High Electron Mobility Transistors Studied by Monte Carlo Simulations

A 273-301-GHz Amplifier With 21-dB Peak Gain in 65-nm Standard Bulk CMOS

Investigation of the growth mechanism and crystallographic structures of GaSb dots nucleation layer and GaSb thin film grown on Si(001) substrate by molecular beam epitaxy

A 38 dBi Gain, Low-Loss, Flat Array Antenna for 320 GHz to 400 GHz Enabled by Silicon-On-Insulator Micromachining

Suppression of Multiple Reflection by Metasurface Absorber in 120-GHz-band Close-Proximity Wireless Link

Optimally Matched 189-232 GHz 6.8 dBm Output Power CMOS Frequency Doubler

Research and Development of GaN-based HEMTs for Millimeter- and Terahertz-Wave Wireless Communications

A 260-GHz Four-Way Phase Compensated CMOS Frequency Multiplier Chain

Analysis of performances of InSb HEMTs using quantum-corrected Monte Carlo simulation

Effect of Strain in Channel on Electron Transport Properties of Ga1−xInxSb High Electron Mobility Transistor Structures with Strained‐Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer

Effect of Strain in Channel on Electron Transport Properties of Ga1−x In x Sb High Electron Mobility Transistor Structures with Strained‐Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer

Effect of Strain in Channel on Electron Transport Properties of Ga 1− x In x Sb High Electron Mobility Transistor Structures with Strained‐Al 0.40 In 0.60 Sb/Al 0.25 In 0.75 Sb Stepped Buffer

Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(1 0 0) substrate by molecular beam epitaxy

Waveguide-Type Multiplexer for Multiline Observation of Atmospheric Molecules using Millimeter-Wave Spectroradiometer

Effects of Ga-induced reconstructed surfaces and atomic steps on the morphology of GaSb islands on Si(100)

Effects of Heterointerface Flatness on Device Performance of InP-Based High Electron Mobility Transistor

Implementation of SIW Cavity in Commercial CMOS Technology for Sub-Terahertz Band Applications

200 GHz-band Low-loss Half-Mode SIW CMOS Interconnects and Transmission Lines for Sub-Terahertz Frequency Band Applications

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