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Defect engineering in SiC technology for high-voltage power devices

Applied physics express, 2020-12, Vol.13 (12), p.120101

2020

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Oxygen-vacancy defect in 4H-SiC as a near-infrared emitter: An ab initio study

Journal of applied physics, 2023-10, Vol.134 (14)

2023

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Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Journal of applied physics, 2017-01, Vol.121 (3)

2017

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Interface and oxide trap states of SiO2/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy

Journal of applied physics, 2023-09, Vol.134 (9)

2023

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Oxygen-related defects in 4H-SiC from first principles

Applied physics express, 2024-05, Vol.17 (5), p.51008

2024

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Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing

Applied physics letters, 2023-09, Vol.123 (10)

2023

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Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers

Applied physics letters, 2017-06, Vol.110 (26)

2017

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Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties

Applied physics letters, 2016-10, Vol.109 (18)

2016

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Impacts of post-deposition annealing on hole trap generation at SiO2/p-type GaN MOS interfaces

Applied physics express, 2024-08, Vol.17 (8), p.081002

2024

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Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 000 1 ¯) substrates

Applied physics letters, 2022-08, Vol.121 (6)

2022

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Separate evaluation of interface and oxide hole traps in SiO2/GaN MOS structures with below- and above-gap light excitation

Applied physics express, 2024-01, Vol.17 (1), p.011003

2024

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Demonstration of 4H-SiC CMOS circuits consisting of well-balanced n- and p-channel MOSFETs fabricated by ultrahigh-temperature gate oxidation

Applied physics express, 2021-09, Vol.14 (9), p.91006

2021

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Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing

Applied physics letters, 2022-02, Vol.120 (8)

2022

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Probing the surface potential of SiO2/4H-SiC(0001) by terahertz emission spectroscopy

Journal of applied physics, 2021-09, Vol.130 (11)

2021

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Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy

Applied physics letters, 2014-10, Vol.105 (17)

2014

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Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures

Applied physics letters, 2017-07, Vol.111 (4)

2017

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Design of SiO2/4H–SiC MOS interfaces by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing

AIP advances, 2023-11, Vol.13 (11), p.115304-115304-5

2023

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Voids and vacancy-type defects in SiO2/GaN structures probed by monoenergetic positron beams

Journal of applied physics, 2020-02, Vol.127 (5)

2020

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Generation of single photon emitters at a SiO2/SiC interface by high-temperature oxidation and reoxidation at lower temperatures

Applied physics express, 2024-05, Vol.17 (5), p.051004

2024

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Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations

Applied physics letters, 2019-09, Vol.115 (13)

2019

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Fixed-charge generation in SiO2/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth

Japanese Journal of Applied Physics, 2022-05, Vol.61 (SC), p.SC1034

2022

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Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas

AIP advances, 2015-09, Vol.5 (9), p.097134-097134-7

2015

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Fabrication of tensile-strained single-crystalline GeSn on transparent substrate by nucleation-controlled liquid-phase crystallization

Applied physics letters, 2017-01, Vol.110 (3)

2017

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Evaluation of the Impact of Al Atoms on SiO2/ SiC Interface Property by Using 4H-SiC n+-Channel Junctionless MOSFET

Materials science forum, 2019-07, Vol.963, p.171-174

2019

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Controlled oxide interlayer for improving reliability of SiO2/GaN MOS devices

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD06

2019

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Defect engineering in SiC technology for high-voltage power devices

Oxygen-vacancy defect in 4H-SiC as a near-infrared emitter: An ab initio study

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Interface and oxide trap states of SiO2/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy

Oxygen-related defects in 4H-SiC from first principles

Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing

Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers

Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties

Impacts of post-deposition annealing on hole trap generation at SiO2/p-type GaN MOS interfaces

Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 000 1 ¯) substrates

Separate evaluation of interface and oxide hole traps in SiO2/GaN MOS structures with below- and above-gap light excitation

Demonstration of 4H-SiC CMOS circuits consisting of well-balanced n- and p-channel MOSFETs fabricated by ultrahigh-temperature gate oxidation

Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing

Probing the surface potential of SiO2/4H-SiC(0001) by terahertz emission spectroscopy

Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy

Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures

Design of SiO2/4H–SiC MOS interfaces by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing

Voids and vacancy-type defects in SiO2/GaN structures probed by monoenergetic positron beams

Generation of single photon emitters at a SiO2/SiC interface by high-temperature oxidation and reoxidation at lower temperatures

Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations

Fixed-charge generation in SiO2/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth

Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas

Fabrication of tensile-strained single-crystalline GeSn on transparent substrate by nucleation-controlled liquid-phase crystallization

Evaluation of the Impact of Al Atoms on SiO2/ SiC Interface Property by Using 4H-SiC n+-Channel Junctionless MOSFET

Controlled oxide interlayer for improving reliability of SiO2/GaN MOS devices

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