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Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage

Applied physics letters, 2017-11, Vol.111 (22)

2017

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Analysis of short circuit current loss in rear emitter crystalline Si solar cell

Journal of applied physics, 2016-05, Vol.119 (20)

2016

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Leakage current reduction of vertical GaN junction barrier Schottky diodes using dual-anode process

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4), p.40302

2018

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The impact of Ge codoping on the enhancement of photovoltaic characteristics of B-doped Czochralski grown Si crystal

Journal of applied physics, 2012-02, Vol.111 (4), p.043707-043707-6

2012

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Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation

IEEE electron device letters, 2019-09, Vol.40 (9), p.1487-1490

2019

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Improvement of Rear Surface Passivation Quality in p-Type Silicon Heterojunction Solar Cells Using Boron-Doped Microcrystalline Silicon Oxide

Japanese Journal of Applied Physics, 2011-08, Vol.50 (8), p.082301-082301-4

2011

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Improvement of Rear Surface Passivation Quality in p-Type Silicon Heterojunction Solar Cells Using Boron-Doped Microcrystalline Silicon Oxide

Japanese Journal of Applied Physics, 2011-08, Vol.50 (8R), p.82301

2011

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A simulation study of vertical Ga2O3 Schottky barrier diodes using field plate termination

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.02SP66

2024

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A simulation study of vertical Ga 2 O 3 Schottky barrier diodes using field plate termination

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.2

2024

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Effects of Annealing and Atomic Hydrogen Treatment on Aluminum Oxide Passivation Layers for Crystalline Silicon Solar Cells

Japanese Journal of Applied Physics, 2011-01, Vol.50 (1), p.012301-012301-5

2011

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Design and demonstration of EID MOS-HEMTs on Si substrate with normally depleted AlGaN/GaN epitaxial layer

Japanese Journal of Applied Physics, 2022-05, Vol.61 (SC), p.SC1015

2022

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Investigation of post-annealing effects for normally-off GaN metal-oxide semiconductor heterojunction field-effect transistors with thin AlN barrier layer

Japanese Journal of Applied Physics, 2019-04, Vol.58 (SB), p.SBBD09

2019

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Growth of strain relaxed Si1−C on Si buffer layer by gas-source MBE

Thin solid films, 2006-06, Vol.508 (1-2), p.99-102

2006

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TCAD Simulation Modeling of Mold Epoxy Resin Applied for Encapsulation of Power Devices

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, p.286-289

2023

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N-type silicon solar cell with rear tunnel oxide combined with rear screen-printed electrodes

Japanese Journal of Applied Physics, 2018-08, Vol.57 (8S3), p.8

2018

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Rare earth oxide alloys and stacked layers: An ab initio study

Thin solid films, 2010-06, Vol.518 (16), p.4747-4749

2010

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Epitaxial growth of strained Si1-yCy films by the hot-wire cell method and its application to metal oxide semiconductor devices

Thin solid films, 2003-04, Vol.430 (1-2), p.283-286

2003

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CHARACTERIZATION AND DEVICE APPLICATION OF TENSILE-STRAINED Si1-yCy LAYERS GROWN BY GAS-SOURCE MOLECULAR BEAM EPITAXY

Jpn.J.Appl.Phys ,Part 1. Vol. 43, no. 6A, pp. 3281-3284. 2004, 2004-01, Vol.43 (6A), p.3281-3284

2004

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Over 21% Efficiency of n-Type Monocrystalline Silicon PERT Photovoltaic Cell With Boron Emitter

IEEE journal of photovoltaics, 2016-07, Vol.6 (4), p.846-851

2016

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Characterization of Hydrogen in Epitaxial Silicon Films Grown at Very Low Temperatures

Japanese Journal of Applied Physics, 1998-03, Vol.37 (3S), p.1202

1998

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Development of the Transparent Conductive Oxide Layer for Nanocrystalline Cubic Silicon Carbide/Silicon Heterojunction Solar Cells with Aluminum Oxide Passivation Layers

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2S), p.2

2012

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Growth Mechanism during Silicon Epitaxy by Photochemical Vapor Deposition at Low Temperatures

Japanese Journal of Applied Physics, 1999-06, Vol.38 (6R), p.3622

1999

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Growth and structural characterization of epitaxial (La1−xLux)2O3 layers grown on Si(111)

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-05, Vol.28 (3), p.C3-C3A8

2010

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Structure analysis of epitaxial Gd2O3/Si(001) for high-k gate dielectric applications

Journal of crystal growth, 2009-03, Vol.311 (7), p.2179-2182

2009

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Epitaxial multi-component rare-earth oxide: A high- k material with ultralow mismatch to Si

Materials letters, 2010-04, Vol.64 (7), p.866-868

2010

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Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage

Analysis of short circuit current loss in rear emitter crystalline Si solar cell

Leakage current reduction of vertical GaN junction barrier Schottky diodes using dual-anode process

The impact of Ge codoping on the enhancement of photovoltaic characteristics of B-doped Czochralski grown Si crystal

Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation

Improvement of Rear Surface Passivation Quality in p-Type Silicon Heterojunction Solar Cells Using Boron-Doped Microcrystalline Silicon Oxide

Improvement of Rear Surface Passivation Quality in p-Type Silicon Heterojunction Solar Cells Using Boron-Doped Microcrystalline Silicon Oxide

A simulation study of vertical Ga2O3 Schottky barrier diodes using field plate termination

A simulation study of vertical Ga 2 O 3 Schottky barrier diodes using field plate termination

Effects of Annealing and Atomic Hydrogen Treatment on Aluminum Oxide Passivation Layers for Crystalline Silicon Solar Cells

Design and demonstration of EID MOS-HEMTs on Si substrate with normally depleted AlGaN/GaN epitaxial layer

Investigation of post-annealing effects for normally-off GaN metal-oxide semiconductor heterojunction field-effect transistors with thin AlN barrier layer

Growth of strain relaxed Si1−C on Si buffer layer by gas-source MBE

TCAD Simulation Modeling of Mold Epoxy Resin Applied for Encapsulation of Power Devices

N-type silicon solar cell with rear tunnel oxide combined with rear screen-printed electrodes

Rare earth oxide alloys and stacked layers: An ab initio study

Epitaxial growth of strained Si1-yCy films by the hot-wire cell method and its application to metal oxide semiconductor devices

CHARACTERIZATION AND DEVICE APPLICATION OF TENSILE-STRAINED Si1-yCy LAYERS GROWN BY GAS-SOURCE MOLECULAR BEAM EPITAXY

Over 21% Efficiency of n-Type Monocrystalline Silicon PERT Photovoltaic Cell With Boron Emitter

Characterization of Hydrogen in Epitaxial Silicon Films Grown at Very Low Temperatures

Development of the Transparent Conductive Oxide Layer for Nanocrystalline Cubic Silicon Carbide/Silicon Heterojunction Solar Cells with Aluminum Oxide Passivation Layers

Growth Mechanism during Silicon Epitaxy by Photochemical Vapor Deposition at Low Temperatures

Growth and structural characterization of epitaxial (La1−xLux)2O3 layers grown on Si(111)

Structure analysis of epitaxial Gd2O3/Si(001) for high-k gate dielectric applications

Epitaxial multi-component rare-earth oxide: A high- k material with ultralow mismatch to Si

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