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Analyzing k · p modeling in highly mismatched alloys and other III–V semiconductors

Journal of applied physics, 2023-12, Vol.134 (23)

2023

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Effect of substrate orientation on band structure of bulk III-V semiconductors

AIP advances, 2022-11, Vol.12 (11), p.115208-115208-12

2022

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Electronic band structure and material gain of III-V-Bi quantum wells grown on GaSb substrate and dedicated for mid-infrared spectral range

Journal of applied physics, 2016-02, Vol.119 (7)

2016

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Radio Frequency System, Power Converters and Cryomodule installation and tests as a Polish in-kind contribution to the European Spallation Source (ESS)

Journal of physics. Conference series, 2024-01, Vol.2687 (2), p.22020

2024

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8-band and 14-band kp modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates

Journal of applied physics, 2015-08, Vol.118 (5)

2015

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First demonstration of the use of crab cavities on hadron beams

Physical review. Accelerators and beams, 2021-06, Vol.24 (6), p.062001, Article 062001

2021

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Education and training of clinical and translational study investigators and research coordinators: A competency-based approach

Journal of clinical and translational science, 2017-02, Vol.1 (1), p.16-25

2017

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Band structure and the optical gain of GaInNAs/GaAs quantum wells modeled within 10-band and 8-band kp model

Journal of applied physics, 2013-02, Vol.113 (6)

2013

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Numerical analysis of the effective masses in InGaAsN quantum-well structures with self-consistent effects

Journal of physics. Condensed matter, 2005-10, Vol.17 (41), p.6539-6544

2005

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Quench localisation in SRF cavity tests with transition edge sensors

IOP conference series. Materials Science and Engineering, 2019-04, Vol.502 (1), p.12155

2019

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The effect of well coupling on effective masses in the InGaAsN material system

Journal of physics. Condensed matter, 2007-07, Vol.19 (27), p.276202-276202 (8)

2007

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Numerical studies of optical gain of coupled quantum wells based on InGaAsN material system

Physica Status Solidi (b), 2008-04, Vol.245 (4), p.726-730

2008

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Enhancing Clinical Research Professionals' Training and Qualifications (ECRPTQ): Recommendations for Good Clinical Practice (GCP) training for investigators and study coordinators

Journal of clinical and translational science, 2017-02, Vol.1 (1), p.8-15

2017

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Spectra of differential gain and linewidth enhancement factor in InGaAsN/GaAs single quantum well structures

Physica status solidi. A, Applications and materials science, 2007-07, Vol.204 (7), p.2487-2494

2007

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Analysis of linewidth enhancement factor for quantum well structures based on InGaAsN/GaAs material system

Journal of applied physics, 2009-09, Vol.106 (6), p.063102-063102-5

2009

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The effect of thickness of delta-strained Layers in the design of polarization-insensitive semiconductor optical amplifiers

IEEE photonics technology letters, 2004-04, Vol.16 (4), p.996-998

2004

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Effect of well coupling on the TE optical modal gain in quantum-well-based semiconductor lasers

Journal of physics. Condensed matter, 2002-02, Vol.14 (4), p.L83-L87

2002

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Characterization of effective masses in InGaAsN quantum well structures by computer simulations

Journal of applied physics, 2005-12, Vol.98 (11), p.113705-113705-4

2005

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Negative-permeability electromagnetically induced transparent and magnetically active metamaterials

Physical review. B, Condensed matter and materials physics, 2010-05, Vol.81 (19), Article 195128

2010

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On the determination of hole subband structure for quantum well systems with arbitrary growth direction

Journal of physics. Condensed matter, 1999-05, Vol.11 (20), p.4021-4030

1999

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On the design of polarization-insensitive semiconductor optical amplifiers

Microwave and optical technology letters, 2002-11, Vol.35 (3), p.227-230

2002

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Modeling the electrostatic and band-mixing effects on gain for double-quantum-well lasers

Microwave and optical technology letters, 2002-04, Vol.33 (1), p.35-37

2002

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Stability analysis of quantum-well semiconductor lasers with carrier transport effects

IEEE photonics technology letters, 1999-10, Vol.11 (10), p.1226-1228

1999

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On the differential gain in coupled quantum wells

Journal of applied physics, 2004-04, Vol.95 (7), p.3834-3836

2004

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Extraction of rate-equation parameters from optical modal gain measurements for multiple-quantum-well semiconductor lasers

Microwave and optical technology letters, 2002-10, Vol.35 (1), p.55-56

2002

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Analyzing k · p modeling in highly mismatched alloys and other III–V semiconductors

Effect of substrate orientation on band structure of bulk III-V semiconductors

Electronic band structure and material gain of III-V-Bi quantum wells grown on GaSb substrate and dedicated for mid-infrared spectral range

Radio Frequency System, Power Converters and Cryomodule installation and tests as a Polish in-kind contribution to the European Spallation Source (ESS)

8-band and 14-band kp modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates

First demonstration of the use of crab cavities on hadron beams

Education and training of clinical and translational study investigators and research coordinators: A competency-based approach

Band structure and the optical gain of GaInNAs/GaAs quantum wells modeled within 10-band and 8-band kp model

Numerical analysis of the effective masses in InGaAsN quantum-well structures with self-consistent effects

Quench localisation in SRF cavity tests with transition edge sensors

The effect of well coupling on effective masses in the InGaAsN material system

Numerical studies of optical gain of coupled quantum wells based on InGaAsN material system

Enhancing Clinical Research Professionals' Training and Qualifications (ECRPTQ): Recommendations for Good Clinical Practice (GCP) training for investigators and study coordinators

Spectra of differential gain and linewidth enhancement factor in InGaAsN/GaAs single quantum well structures

Analysis of linewidth enhancement factor for quantum well structures based on InGaAsN/GaAs material system

The effect of thickness of delta-strained Layers in the design of polarization-insensitive semiconductor optical amplifiers

Effect of well coupling on the TE optical modal gain in quantum-well-based semiconductor lasers

Characterization of effective masses in InGaAsN quantum well structures by computer simulations

Negative-permeability electromagnetically induced transparent and magnetically active metamaterials

On the determination of hole subband structure for quantum well systems with arbitrary growth direction

On the design of polarization-insensitive semiconductor optical amplifiers

Modeling the electrostatic and band-mixing effects on gain for double-quantum-well lasers

Stability analysis of quantum-well semiconductor lasers with carrier transport effects

On the differential gain in coupled quantum wells

Extraction of rate-equation parameters from optical modal gain measurements for multiple-quantum-well semiconductor lasers

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