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Using TCAD Modeling to Compare Heavy-Ion and Laser-Induced Single Event Transients in SiGe HBTs

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.398-405

2017

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The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.406-414

2017

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Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots

Journal of applied physics, 2016-05, Vol.119 (18)

2016

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A Generalized Linear Model for Single Event Transient Propagation in Phase-Locked Loops

IEEE transactions on nuclear science, 2010-10, Vol.57 (5), p.2933-2947

2010

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An Investigation of Single-Event Effects and Potential SEU Mitigation Strategies in Fourth-Generation, 90 nm SiGe BiCMOS

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4175-4183

2013

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Simulation of Light-Matter Interaction and Two-Photon Absorption Induced Charge Deposition by Ultrashort Optical Pulses in Silicon

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3504-3511

2014

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Comparison of X-Ray and Electron Radiation Effects on Dark Current Non-Uniformity and Fluctuations in CMOS Image Sensors

IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.268-277

2020

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Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI

IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.71-80

2020

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Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.359-367

2019

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A Dosimetry Methodology for Two-Photon Absorption Induced Single-Event Effects Measurements

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3416-3423

2014

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Gaas Displacement Damage Dosimeter Based on Diode Dark Currents

E3S Web of Conferences, 2017, Vol.16, p.2004

2017

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Tradeoffs Between RF Performance and SET Robustness in Low-Noise Amplifiers in a Complementary SiGe BiCMOS Platform

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1521-1529

2020

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Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach-Zehnder Modulator in a Si/SiGe Integrated Photonics Platform

IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.260-267

2020

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A Low-Power, Real-Time Displacement Damage Dosimeter

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.290-298

2019

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Spatial Mapping of Pristine and Irradiated AlGaN/GaN HEMTs With UV Single-Photon Absorption Single-Event Transient Technique

IEEE transactions on nuclear science, 2016-08, Vol.63 (4), p.1995-2001

2016

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The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.389-396

2019

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Best Practices for Using Electrostatic Discharge Protection Techniques for Single-Event Transient Mitigation

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.240-247

2019

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Utilizing SiGe HBT Power Detectors for Sensing Single-Event Transients in RF Circuits

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.239-248

2018

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Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3218-3225

2014

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Single-Event Effects in High-Frequency Linear Amplifiers: Experiment and Analysis

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.125-132

2017

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SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.399-406

2018

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Using SRIM to calculate the relative damage coefficients for solar cells

Progress in photovoltaics, 2005-03, Vol.13 (2), p.115-123

2005

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An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier

IEEE transactions on nuclear science, 2016-02, Vol.63 (1), p.273-280

2016

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Single-Event Transient Response of Comparator Pre-Amplifiers in a Complementary SiGe Technology

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.89-96

2017

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An Investigation of the Use of Inverse-Mode SiGe HBTs as Switching Pairs for SET-Mitigated RF Mixers

IEEE transactions on nuclear science, 2016-04, Vol.63 (2), p.1099-1108

2016

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Using TCAD Modeling to Compare Heavy-Ion and Laser-Induced Single Event Transients in SiGe HBTs

The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs

Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots

A Generalized Linear Model for Single Event Transient Propagation in Phase-Locked Loops

An Investigation of Single-Event Effects and Potential SEU Mitigation Strategies in Fourth-Generation, 90 nm SiGe BiCMOS

Simulation of Light-Matter Interaction and Two-Photon Absorption Induced Charge Deposition by Ultrashort Optical Pulses in Silicon

Comparison of X-Ray and Electron Radiation Effects on Dark Current Non-Uniformity and Fluctuations in CMOS Image Sensors

Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI

Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs

A Dosimetry Methodology for Two-Photon Absorption Induced Single-Event Effects Measurements

Gaas Displacement Damage Dosimeter Based on Diode Dark Currents

Tradeoffs Between RF Performance and SET Robustness in Low-Noise Amplifiers in a Complementary SiGe BiCMOS Platform

Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach-Zehnder Modulator in a Si/SiGe Integrated Photonics Platform

A Low-Power, Real-Time Displacement Damage Dosimeter

Spatial Mapping of Pristine and Irradiated AlGaN/GaN HEMTs With UV Single-Photon Absorption Single-Event Transient Technique

The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology

Best Practices for Using Electrostatic Discharge Protection Techniques for Single-Event Transient Mitigation

Utilizing SiGe HBT Power Detectors for Sensing Single-Event Transients in RF Circuits

Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs

Single-Event Effects in High-Frequency Linear Amplifiers: Experiment and Analysis

SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients

Using SRIM to calculate the relative damage coefficients for solar cells

An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier

Single-Event Transient Response of Comparator Pre-Amplifiers in a Complementary SiGe Technology

An Investigation of the Use of Inverse-Mode SiGe HBTs as Switching Pairs for SET-Mitigated RF Mixers

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