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(100)-Oriented gallium oxide substrate for metal organic vapor phase epitaxy for ultraviolet emission

CrystEngComm, 2020-05, Vol.22 (18), p.3122-3129

2020

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17 000%/W second-harmonic conversion efficiency in single-crystalline aluminum nitride microresonators

Applied physics letters, 2018-09, Vol.113 (13)

2018

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275 nm Deep Ultraviolet AlGaN-Based Micro-LED Arrays for Ultraviolet Communication

IEEE photonics journal, 2022-02, Vol.14 (1), p.1-5

2022

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282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

Applied physics letters, 2013-06, Vol.102 (24)

2013

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490b – Association Between Abdominal Versus Gluteofemoral Adiposity and Obesity-Related Gastrointestinal Cancer Incidence: Nih-Aarp Diet and Health Study

Gastroenterology (New York, N.Y. 1943), 2019-05, Vol.156 (6), p.S-1507-S-1507

2019

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646-P: The Efficacy and Safety of Cold Atmospheric Plasma as a Novel Therapy for Diabetic Wound In Vivo and In Vitro

Diabetes (New York, N.Y.), 2019-06, Vol.68 (Supplement_1)

2019

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71-Mbit/s ultraviolet-B LED communication link based on 8-QAM-OFDM modulation

Optics express, 2017-09, Vol.25 (19), p.23267-23274

2017

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Abstract 485: Cancer killing effect of ultrasound-responsive mechanophore nanoparticles

Cancer research (Chicago, Ill.), 2024-03, Vol.84 (6_Supplement), p.485-485

2024

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Achievable Rates for Full-Duplex Massive MIMO Systems Over Rician Fading Channels

IEEE access, 2018, Vol.6, p.30208-30216

2018

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Achievable Rates for Full-Duplex Massive MIMO Systems With Low-Resolution ADCs/DACs

IEEE access, 2019, Vol.7, p.24343-24353

2019

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Achievable secrecy rate of the relay-eavesdropper channel with generalized feedback

2011 International Conference on Wireless Communications and Signal Processing (WCSP), 2011, p.1-4

2011

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An ADRC Attitude Control Algorithm of Quadrotor for Wind Interference

Advances in Guidance, Navigation and Control, 2023, Vol.845, p.5617-5628

2023

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Advances and prospects in nitrides based light-emitting-diodes

Journal of semiconductors, 2016-06, Vol.37 (6), p.1-14

李晋闽刘喆刘志强闫建昌魏同波伊晓燕王军喜

2016

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Advances and prospects in nitrides based light-emitting-diodesProject supported by the National High Technology Research and Development Program of China (No. 2013AA03A101)

Journal of semiconductors, 2016-06, Vol.37 (6)

2016

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Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure

Journal of semiconductors, 2014-11, Vol.35 (11), p.70-73

付丙磊刘乃鑫刘喆李晋闽王军喜

2014

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Agency and mobility in the context of development-induced migration: the case of Three Gorges out-migrants

New Theoretical Dialogues on Migration in China, 2022, p.61-75

1, 2022

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Air stable and fast-charging cathode material for all climate sodium-ion batteries

Journal of colloid and interface science, 2025-01, Vol.678 (Pt B), p.20-29

2025

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An air-stable iron/manganese-based phosphate cathode for high performance sodium-ion batteries

Chemical engineering journal (Lausanne, Switzerland : 1996), 2022-04, Vol.433, p.133798, Article 133798

2022

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AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

Journal of crystal growth, 2007, Vol.298, p.835-839

2007

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AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AlN template using MOVPE

Journal of crystal growth, 2015-03, Vol.414, p.254-257

2015

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AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

Journal of crystal growth, 2014-06, Vol.395, p.9-13

2014

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AlGaN-Based Multiple-Quantum-Well Materials and UV LEDs

III-Nitrides Light Emitting Diodes: Technology and Applications, 2020, p.93-111

2020

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AlGaN-based ultraviolet light-emitting diodes on sputter-deposited AlN templates with epitaxial AlN/AlGaN superlattices

Superlattices and microstructures, 2018-01, Vol.113, p.713-719

2018

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AlGaN/GaN high electron mobility transistors with selective area grown p-GaN gates

Journal of semiconductors, 2016-11, Vol.37 (11), p.114002

2016

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AlGaN/GaN high electron mobility transistors with selective area grown p-GaN gatesProject supported by the National Natural Sciences Foundation of China (Nos. 61376090, 61306008) and the National High Technology Program of China (No. 2014AA032606)

Journal of semiconductors, 2016-11, Vol.37 (11)

2016

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(100)-Oriented gallium oxide substrate for metal organic vapor phase epitaxy for ultraviolet emission

17 000%/W second-harmonic conversion efficiency in single-crystalline aluminum nitride microresonators

275 nm Deep Ultraviolet AlGaN-Based Micro-LED Arrays for Ultraviolet Communication

282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

490b – Association Between Abdominal Versus Gluteofemoral Adiposity and Obesity-Related Gastrointestinal Cancer Incidence: Nih-Aarp Diet and Health Study

646-P: The Efficacy and Safety of Cold Atmospheric Plasma as a Novel Therapy for Diabetic Wound In Vivo and In Vitro

71-Mbit/s ultraviolet-B LED communication link based on 8-QAM-OFDM modulation

Abstract 485: Cancer killing effect of ultrasound-responsive mechanophore nanoparticles

Achievable Rates for Full-Duplex Massive MIMO Systems Over Rician Fading Channels

Achievable Rates for Full-Duplex Massive MIMO Systems With Low-Resolution ADCs/DACs

Achievable secrecy rate of the relay-eavesdropper channel with generalized feedback

An ADRC Attitude Control Algorithm of Quadrotor for Wind Interference

Advances and prospects in nitrides based light-emitting-diodes

Advances and prospects in nitrides based light-emitting-diodesProject supported by the National High Technology Research and Development Program of China (No. 2013AA03A101)

Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure

Agency and mobility in the context of development-induced migration: the case of Three Gorges out-migrants

Air stable and fast-charging cathode material for all climate sodium-ion batteries

An air-stable iron/manganese-based phosphate cathode for high performance sodium-ion batteries

AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AlN template using MOVPE

AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

AlGaN-Based Multiple-Quantum-Well Materials and UV LEDs

AlGaN-based ultraviolet light-emitting diodes on sputter-deposited AlN templates with epitaxial AlN/AlGaN superlattices

AlGaN/GaN high electron mobility transistors with selective area grown p-GaN gates

AlGaN/GaN high electron mobility transistors with selective area grown p-GaN gatesProject supported by the National Natural Sciences Foundation of China (Nos. 61376090, 61306008) and the National High Technology Program of China (No. 2014AA032606)

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