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New Class of 3D Topological Insulator in Double Perovskite

The journal of physical chemistry letters, 2017-01, Vol.8 (2), p.332-339

2017

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First-Principles Study on Possible Half-Metallic Ferrimagnetism in Double Perovskites Pb2XX′O6 (X = Ti, Zr, Hf, V, Nb and Ta, X′ = Tc, Ru, Os and Rh)

Materials, 2022-05, Vol.15 (9), p.3311

2022

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Electronic structure of ferromagnetic semiconductor material on the monoclinic and rhombohedral ordered double perovskites La2FeCoO6

Journal of applied physics, 2015-05, Vol.117 (17)

2015

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Antiferroelectric PbSnO3 Epitaxial Thin Films

Advanced science, 2022-12, Vol.9 (35), p.e2203863-n/a

2022

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Electronic Band Structures of the Possible Topological Insulator Pb2BiBrO6 and Pb2SeTeO6 Double Perovskite: An Ab Initio Study

Applied sciences, 2022-06, Vol.12 (12), p.5913

2022

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Half-Metallic Property Induced by Double Exchange Interaction in the Double Perovskite Bi2BB′O6 (B, B′ = 3d Transitional Metal) via First-Principles Calculations

Materials, 2019-06, Vol.12 (11), p.1844

2019

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Half-metallic ferromagnetism in double perovskites Pb2XX'O6 (X = V and Cr and X’ = Zr and Hf)

Chinese journal of physics (Taipei), 2024-06, Vol.89, p.1763-1770

2024

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Topological insulators double perovskites: A2TePoO6 (A = Ca, Sr, Ba)

Journal of applied physics, 2017-12, Vol.122 (22)

2017

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New ferromagnetic semiconductor double perovskites: La2FeMO6 (M=Co, Rh, and Ir)

Journal of alloys and compounds, 2015-02, Vol.622, p.657-661

2015

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Half-Metallic Property Induced by Double Exchange Interaction in the Double Perovskite Bi2BB'O6 (B, B' = 3d Transitional Metal) via First-Principles Calculations

Materials, 2019-06, Vol.12 (11)

2019

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All-In-One Light-Tunable Borated Phosphors with Chemical and Luminescence Dynamical Control Resolution

ACS applied materials & interfaces, 2014-06, Vol.6 (12), p.9160-9172

2014

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Structural, electronic and magnetic properties of Ni2XAl (X= V, Cr, Mn, Fe, and Co) Heusler alloys: An ab initio study

Physics open, 2020-03, Vol.2, p.100008, Article 100008

2020

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Ab Initio Research on a New Type of Half-Metallic Double Perovskites, A2CrMO6 (A = IVA Group Elements; M = Mo, Re and W)

Computation, 2014, Vol.2 (1), p.12-22

2014

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Antiferroelectric PbSnO 3 Epitaxial Thin Films

Advanced science, 2022-12, Vol.9 (35), p.e2203863

2022

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Electronic structures of compensated magnetism in double perovskites A2CrRu(Os)O6 (A=Si, Ge, Sn, and Pb) from ab initio calculations

Journal of alloys and compounds, 2013-01, Vol.547, p.126-131

2013

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Luminescence and density functional theory (DFT) calculation of undoped nitridosilicate phosphors for light-emitting diodes

Journal of materials chemistry, 2012-01, Vol.22 (12), p.5828-5834

2012

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Newtype single-layer magnetic semiconductor in transition-metal dichalcogenides VX2 (X = S, Se and Te)

Scientific reports, 2016-09, Vol.6 (1), p.32625-32625, Article 32625

2016

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First-Principles Study on Possible Half-Metallic Ferrimagnetism in Double Perovskites Pb 2 XX'O 6 (X = Ti, Zr, Hf, V, Nb and Ta, X' = Tc, Ru, Os and Rh)

Materials, 2022-05, Vol.15 (9)

2022

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First-Principles Study on Possible Half-Metallic Ferrimagnetism in Double Perovskites Pb2XX'O6 (X = Ti, Zr, Hf, V, Nb and Ta, X' = Tc, Ru, Os and Rh)

Materials, 2022-05, Vol.15 (9)

2022

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Electronic Structure of Half-Metal Antiferromagnetism in Double-Perovskite BiPbVRuO 6 and BiPbVOsO 6

Journal of the Physical Society of Japan, 2014-05, Vol.83 (5), p.54715

2014

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New Class of 3D Topological Insulator in Double Perovskite

The journal of physical chemistry letters, 2016-12, Vol.8 (2)

2016

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Half-Metallic Property Induced by Double Exchange Interaction in the Double Perovskite Bi 2 BB' O 6 ( B, B' = 3d Transitional Metal) via First-Principles Calculations

Materials, 2019-06, Vol.12 (11)

2019

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New ferromagnetic semiconductor double perovskites: La sub(2)FeMO sub(6) (M = Co, Rh, and Ir)

Journal of alloys and compounds, 2015-02, Vol.622, p.657-661

2015

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Electronic structure of ferromagnetic semiconductor material on the monoclinic and rhombohedral ordered double perovskites La{sub 2}FeCoO{sub 6}

Journal of applied physics, 2015-05, Vol.117 (17)

2015

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First principle research of possible HM-AFM in double perovskites A2MoOsO6 and A2TcReO6 (A = Si, Ge, Sn, and Pb) with group IVA elements set on the A-site position

Solid state sciences, 2013-05, Vol.19, p.94-98

2013

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New Class of 3D Topological Insulator in Double Perovskite

First-Principles Study on Possible Half-Metallic Ferrimagnetism in Double Perovskites Pb2XX′O6 (X = Ti, Zr, Hf, V, Nb and Ta, X′ = Tc, Ru, Os and Rh)

Electronic structure of ferromagnetic semiconductor material on the monoclinic and rhombohedral ordered double perovskites La2FeCoO6

Antiferroelectric PbSnO3 Epitaxial Thin Films

Electronic Band Structures of the Possible Topological Insulator Pb2BiBrO6 and Pb2SeTeO6 Double Perovskite: An Ab Initio Study

Half-Metallic Property Induced by Double Exchange Interaction in the Double Perovskite Bi2BB′O6 (B, B′ = 3d Transitional Metal) via First-Principles Calculations

Half-metallic ferromagnetism in double perovskites Pb2XX'O6 (X = V and Cr and X’ = Zr and Hf)

Topological insulators double perovskites: A2TePoO6 (A = Ca, Sr, Ba)

New ferromagnetic semiconductor double perovskites: La2FeMO6 (M=Co, Rh, and Ir)

Half-Metallic Property Induced by Double Exchange Interaction in the Double Perovskite Bi2BB'O6 (B, B' = 3d Transitional Metal) via First-Principles Calculations

All-In-One Light-Tunable Borated Phosphors with Chemical and Luminescence Dynamical Control Resolution

Structural, electronic and magnetic properties of Ni2XAl (X= V, Cr, Mn, Fe, and Co) Heusler alloys: An ab initio study

Ab Initio Research on a New Type of Half-Metallic Double Perovskites, A2CrMO6 (A = IVA Group Elements; M = Mo, Re and W)

Antiferroelectric PbSnO 3 Epitaxial Thin Films

Electronic structures of compensated magnetism in double perovskites A2CrRu(Os)O6 (A=Si, Ge, Sn, and Pb) from ab initio calculations

Luminescence and density functional theory (DFT) calculation of undoped nitridosilicate phosphors for light-emitting diodes

Newtype single-layer magnetic semiconductor in transition-metal dichalcogenides VX2 (X = S, Se and Te)

First-Principles Study on Possible Half-Metallic Ferrimagnetism in Double Perovskites Pb 2 XX'O 6 (X = Ti, Zr, Hf, V, Nb and Ta, X' = Tc, Ru, Os and Rh)

First-Principles Study on Possible Half-Metallic Ferrimagnetism in Double Perovskites Pb2XX'O6 (X = Ti, Zr, Hf, V, Nb and Ta, X' = Tc, Ru, Os and Rh)

Electronic Structure of Half-Metal Antiferromagnetism in Double-Perovskite BiPbVRuO 6 and BiPbVOsO 6

New Class of 3D Topological Insulator in Double Perovskite

Half-Metallic Property Induced by Double Exchange Interaction in the Double Perovskite Bi 2 BB' O 6 ( B, B' = 3d Transitional Metal) via First-Principles Calculations

New ferromagnetic semiconductor double perovskites: La sub(2)FeMO sub(6) (M = Co, Rh, and Ir)

Electronic structure of ferromagnetic semiconductor material on the monoclinic and rhombohedral ordered double perovskites La{sub 2}FeCoO{sub 6}

First principle research of possible HM-AFM in double perovskites A2MoOsO6 and A2TcReO6 (A = Si, Ge, Sn, and Pb) with group IVA elements set on the A-site position

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