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A cytoplasmic pathway for gapmer antisense oligonucleotide-mediated gene silencing in mammalian cells

Nucleic acids research, 2015-10, Vol.43 (19), p.9350

2015

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class of selective antibacterials derived from a protein kinase inhibitor pharmacophore

Proceedings of the National Academy of Sciences - PNAS, 2009-02, Vol.106 (6), p.1737-1742

2009

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Crystallographic Identification of a Noncompetitive Inhibitor Binding Site on the Hepatitis C Virus NS5B RNA Polymerase Enzyme

Journal of Virology, 2003-07, Vol.77 (13), p.7575-7581

2003

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Discovery of novel biaryl sulfonamide based Mcl-1 inhibitors

Bioorganic & medicinal chemistry letters, 2019-08, Vol.29 (16), p.2375-2382

2019

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Discovery and Optimization of Quinolinone Derivatives as Potent, Selective, and Orally Bioavailable Mutant Isocitrate Dehydrogenase 1 (mIDH1) Inhibitors

Journal of medicinal chemistry, 2019-07, Vol.62 (14), p.6575-6596

2019

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Crystallographic Identification of a Noncompetitive Inhibitor Binding Site on the Hepatitis C Virus NS5B RNA Polymerase Enzyme

Journal of virology, 2003-09, Vol.77 (18), p.10176-10176

2003

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Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors

Materials, 2020-11, Vol.13 (21), p.4956

2020

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Wide-band double-ring resonator with transmission zeros and resonances using high permittivity aluminum nitride substrate

Microwave and optical technology letters, 2009-12, Vol.51 (12), p.2878-2882

2009

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KEY SUCCESS FACTORS IN DIGITAL MARKETING IN SERVICE INDUSTRY AND THE DEVELOPMENT STRATEGIES: A CASE STUDY ON FLEUR DE CHINE AT SUN MOON LAKE

International journal of organizational innovation, 2015-07, Vol.8 (1), p.171

2015

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Optimization of the Au Stud Bump Number for the Flip-Chip Packaged InGaN LEDs

Advanced materials research, 2013, Vol.753-755, p.2515-2520

2013

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Erratum: Lie group analyses of pattern formation of Gurken distribution in Drosophila oogenesis

Luminescence (Chichester, England), 2011-01, Vol.26 (1), p.76-76

2011

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Barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes prepared by P2S5/(NH4)2Sx and HF treatments

Journal of applied physics, 1999-12, Vol.86 (11), p.6261-6263

1999

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Barrier Height Enhancement of Ni/n-Type InP Schottky Contact Using a Thin Praseodymium Interlayer

Japanese Journal of Applied Physics, 1999-12, Vol.38 (12A), p.L1382

1999

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Using kano's model to explore the wait service quality of THSR

Journal of information & optimization sciences, 2011-09, Vol.32 (5), p.1155-1174

2011

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Feasibility of Categorizing Rehabilitation Gestures for Automated Fidelity Assessment on Strategy Training using Deep Learning

2023 IEEE 11th International Conference on Healthcare Informatics (ICHI), 2023, p.513-515

2023

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IEEE_Xplore

SURFACE PASSIVATION USING P2S5/(NH4)2Sx AND HYDROGEN FLUORIDE SOLUTIONS ON Ag/n-InAs AND Ag/n-InSb SCHOTTKY DIODES

Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 2A, pp. 562-564. 2001, 2001, Vol.40 (2A), p.562-564

2001

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Gettering Properties in Praseodymium-Added Crystal Growth

Japanese Journal of Applied Physics, 1998, Vol.37 (3R), p.811

1998

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Impurity gettering effect in Pr2O3-Added InGaAs liquid phase epitaxy

Japanese journal of applied physics, 1997, Vol.36 (12A), p.7264-7266

1997

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Praseodymium added GaAs liquid phase epitaxy and its Schottky diode application

Journal of crystal growth, 1999-03, Vol.198, p.1092-1097

1999

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Surface Passivation Using P 2 S 5 /(NH 4 ) 2 S x and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes

Japanese Journal of Applied Physics, 2001-02, Vol.40 (2R), p.562

2001

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High barrier height nickel/GaAs Schottky diodes fabricated by addition of Pr2O3 into a Ga melt for liquid phase epitaxy

Japanese journal of applied physics, 1997, Vol.36 (6A), p.3429-3432

1997

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High Barrier Height Nickel/GaAs Schottky Diodes Fabricated by Addition of Pr 2 O 3 into a Ga Melt for Liquid Phase Epitaxy

Japanese Journal of Applied Physics, 1997-06, Vol.36 (6R), p.3429

1997

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Characterization of Pr2O3 Added Metals/GaAs Schottky Diodes using X-ray Photoelectron Spectroscopy

Crystal research and technology (1979), 1999-09, Vol.34 (8), p.1017-1021

1999

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Impurity Gettering Effect in Pr 2 O 3 - Added InGaAs Liquid Phase Epitaxy

Japanese Journal of Applied Physics, 1997-12, Vol.36 (12R), p.7264

1997

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A cytoplasmic pathway for gapmer antisense oligonucleotide-mediated gene silencing in mammalian cells

class of selective antibacterials derived from a protein kinase inhibitor pharmacophore

Crystallographic Identification of a Noncompetitive Inhibitor Binding Site on the Hepatitis C Virus NS5B RNA Polymerase Enzyme

Discovery of novel biaryl sulfonamide based Mcl-1 inhibitors

Discovery and Optimization of Quinolinone Derivatives as Potent, Selective, and Orally Bioavailable Mutant Isocitrate Dehydrogenase 1 (mIDH1) Inhibitors

Crystallographic Identification of a Noncompetitive Inhibitor Binding Site on the Hepatitis C Virus NS5B RNA Polymerase Enzyme

Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors

Wide-band double-ring resonator with transmission zeros and resonances using high permittivity aluminum nitride substrate

KEY SUCCESS FACTORS IN DIGITAL MARKETING IN SERVICE INDUSTRY AND THE DEVELOPMENT STRATEGIES: A CASE STUDY ON FLEUR DE CHINE AT SUN MOON LAKE

Optimization of the Au Stud Bump Number for the Flip-Chip Packaged InGaN LEDs

Erratum: Lie group analyses of pattern formation of Gurken distribution in Drosophila oogenesis

Barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes prepared by P2S5/(NH4)2Sx and HF treatments

Barrier Height Enhancement of Ni/n-Type InP Schottky Contact Using a Thin Praseodymium Interlayer

Using kano's model to explore the wait service quality of THSR

Feasibility of Categorizing Rehabilitation Gestures for Automated Fidelity Assessment on Strategy Training using Deep Learning

SURFACE PASSIVATION USING P2S5/(NH4)2Sx AND HYDROGEN FLUORIDE SOLUTIONS ON Ag/n-InAs AND Ag/n-InSb SCHOTTKY DIODES

Gettering Properties in Praseodymium-Added Crystal Growth

Impurity gettering effect in Pr2O3-Added InGaAs liquid phase epitaxy

Praseodymium added GaAs liquid phase epitaxy and its Schottky diode application

Surface Passivation Using P 2 S 5 /(NH 4 ) 2 S x and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes

High barrier height nickel/GaAs Schottky diodes fabricated by addition of Pr2O3 into a Ga melt for liquid phase epitaxy

High Barrier Height Nickel/GaAs Schottky Diodes Fabricated by Addition of Pr 2 O 3 into a Ga Melt for Liquid Phase Epitaxy

Characterization of Pr2O3 Added Metals/GaAs Schottky Diodes using X-ray Photoelectron Spectroscopy

Impurity Gettering Effect in Pr 2 O 3 - Added InGaAs Liquid Phase Epitaxy

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