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Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Nanoscale research letters, 2017-06, Vol.12 (1), p.1-393, Article 393

2017

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Impact of Metal Nanocrystal Size and Distribution on Resistive Switching Parameters of Oxide-Based Resistive Random Access Memories

IEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4674-4678

2018

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Enhanced electrochemical performance of LiNi0.5Co0.2Mn0.3O2 cathode material by ultrathin ZrO2 coating

Journal of alloys and compounds, 2016-02, Vol.657, p.593-600

2016

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Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

Nanoscale research letters, 2015-03, Vol.10 (1), p.135-135, Article 135

2015

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Synaptic functions and a memristive mechanism on Pt/AlOx/HfOx/TiN bilayer-structure memristors

Journal of physics. D, Applied physics, 2020-01, Vol.53 (3)

2020

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Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System

Nanoscale research letters, 2017-01, Vol.12 (1), p.65-65, Article 65

2017

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Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications

ACS applied materials & interfaces, 2017-02, Vol.9 (7), p.6634-6643

2017

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Growth Mechanism, Ambient Stability, and Charge Trapping Ability of Ti-Based Maleic Acid Hybrid Films by Molecular Layer Deposition

Langmuir, 2019-02, Vol.35 (8), p.3020-3030

2019

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Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2

Chemical communications (Cambridge, England), 2015-01, Vol.51 (7), p.1341-1344

2015

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Enhanced electrochemical performance of LiNi 0.5 Co 0.2 Mn 0.3 O 2 cathode material by ultrathin ZrO 2 coating

Journal of alloys and compounds, 2016-02, Vol.657, p.593-600

2016

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Stepwise mechanism and H2O-assisted hydrolysis in atomic layer deposition of SiO2 without a catalyst

Nanoscale research letters, 2015-02, Vol.10 (1), p.68-68, Article 68

2015

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Study on Microstructure and Ferroelectricity of Strontium Barium Titanate Thin Films Prepared by Sol-Gel Processing

Applied Mechanics and Materials, 2013-05, Vol.320, p.202-207

2013

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Synaptic functions and a memristive mechanism on Pt/AlO x /HfO x /TiN bilayer-structure memristors

Journal of physics. D, Applied physics, 2020-01, Vol.53 (3), p.35302

2020

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Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfO x /ZnO x /TiN Memristive System

Nanoscale research letters, 2017-12, Vol.12 (1), p.65

2017

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Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPt x Nanocrystals for Resistive Random Access Memory Applications

ACS applied materials & interfaces, 2017-02, Vol.9 (7), p.6634-6643

2017

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Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfO^sub x^/ZnO^sub x^/TiN Memristive System

Nanoscale research letters, 2017-01, Vol.12 (1), p.1

2017

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Self-catalysis by aminosilanes and strong surface oxidation by O 2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO 2

Chemical communications (Cambridge, England), 2015, Vol.51 (7), p.1341-1344

2015

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Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2Electronic supplementary information (ESI) available. See DOI: 10.1039/c4cc08004a

2014-12

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Self-catalysis by aminosilanes and strong surface oxidation by O sub(2) plasma in plasma-enhanced atomic layer deposition of high-quality SiO sub(2)

Chemical communications (Cambridge, England), 2014-12, Vol.51 (7), p.1341-1344

2014

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Bipolar Resistive Switching Characteristics of HfO 2 /TiO 2 /HfO 2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Nanoscale research letters, 2017-12, Vol.12 (1), p.393

2017

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Excellent resistive switching properties of atomic layer-deposited Al^sub 2^O3/HfO2/Al^sub 2^O3 trilayer structures for non-volatile memory applications

Nanoscale research letters, 2015-03, Vol.10 (1), p.1

2015

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Effects of Nitrogen Application on Chlorophyll Fluorescence Parameters and Leaf Gas Exchange in Naked Oat

Journal of Integrative Agriculture, 2013-12, Vol.12 (12), p.2164-2171

2013

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Tricalcium Silicate (C sub(3) S) Properties in Different Physical and Chemical Environment

Advanced Materials Research, 2013-01, Vol.652-654, p.1256-1259

2013

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Synthesis of N-benzothiazol-2-yl-amides by Pd-catalyzed C（sp2）-H functionalization

中国化学快报：英文版, 2015 (11), p.1376-1380

Jun-Ke Wang Ying-Xiao Zong Xi-Cun Wang Yu-Lai Hu Guo-Ren Yue

2015

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Tricalcium Silicate (C3S) Properties in Different Physical and Chemical Environment

Advanced materials research, 2013, Vol.652-654, p.1256-1259

2013

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Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Impact of Metal Nanocrystal Size and Distribution on Resistive Switching Parameters of Oxide-Based Resistive Random Access Memories

Enhanced electrochemical performance of LiNi0.5Co0.2Mn0.3O2 cathode material by ultrathin ZrO2 coating

Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

Synaptic functions and a memristive mechanism on Pt/AlOx/HfOx/TiN bilayer-structure memristors

Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System

Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications

Growth Mechanism, Ambient Stability, and Charge Trapping Ability of Ti-Based Maleic Acid Hybrid Films by Molecular Layer Deposition

Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2

Enhanced electrochemical performance of LiNi 0.5 Co 0.2 Mn 0.3 O 2 cathode material by ultrathin ZrO 2 coating

Stepwise mechanism and H2O-assisted hydrolysis in atomic layer deposition of SiO2 without a catalyst

Study on Microstructure and Ferroelectricity of Strontium Barium Titanate Thin Films Prepared by Sol-Gel Processing

Synaptic functions and a memristive mechanism on Pt/AlO x /HfO x /TiN bilayer-structure memristors

Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfO x /ZnO x /TiN Memristive System

Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPt x Nanocrystals for Resistive Random Access Memory Applications

Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfO^sub x^/ZnO^sub x^/TiN Memristive System

Self-catalysis by aminosilanes and strong surface oxidation by O 2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO 2

Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2Electronic supplementary information (ESI) available. See DOI: 10.1039/c4cc08004a

Self-catalysis by aminosilanes and strong surface oxidation by O sub(2) plasma in plasma-enhanced atomic layer deposition of high-quality SiO sub(2)

Bipolar Resistive Switching Characteristics of HfO 2 /TiO 2 /HfO 2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Excellent resistive switching properties of atomic layer-deposited Al^sub 2^O3/HfO2/Al^sub 2^O3 trilayer structures for non-volatile memory applications

Effects of Nitrogen Application on Chlorophyll Fluorescence Parameters and Leaf Gas Exchange in Naked Oat

Tricalcium Silicate (C sub(3) S) Properties in Different Physical and Chemical Environment

Synthesis of N-benzothiazol-2-yl-amides by Pd-catalyzed C（sp2）-H functionalization

Tricalcium Silicate (C3S) Properties in Different Physical and Chemical Environment

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