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On-Chip Integration of GaN-Based Laser, Modulator, and Photodetector Grown on Si

IEEE journal of selected topics in quantum electronics, 2018-11, Vol.24 (6), p.1-5

2018

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Validation of Just-Released SWOT L2 KaRIn Beta Prevalidated Data Based on Restore the Marine Gravity Field and Its Application

IEEE journal of selected topics in applied earth observations and remote sensing, 2024, Vol.17, p.7878-7887

2024

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Performance of Haiyang-2 Derived Gravity Field Products in Bathymetry Inversion

Remote sensing (Basel, Switzerland), 2023-01, Vol.15 (1), p.32

2023

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On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si

Scientific reports, 2018-05, Vol.8 (1), p.7922-8, Article 7922

2018

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Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth

Applied physics letters, 2013-10, Vol.103 (15)

2013

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Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si

ACS photonics, 2018-03, Vol.5 (3), p.699-704

2018

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Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer

Journal of crystal growth, 2006-01, Vol.286 (2), p.209-212

2006

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Enhanced performance of p-GaN by Mg δ doping

Journal of crystal growth, 2007-06, Vol.304 (1), p.7-10

2007

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Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes

Science China. Technological sciences, 2012-04, Vol.55 (4), p.883-887

2012

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Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction

Solid-state electronics, 2007-06, Vol.51 (6), p.860-864

2007

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Sterilization system for air purifier by combining ultraviolet light emitting diodes with TiO2

Journal of chemical technology and biotechnology (1986), 2009-10, Vol.84 (10), p.1437-1440

2009

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Room-temperature electrically pumped InGaN-based microdisk laser grown on Si

Optics express, 2018-02, Vol.26 (4), p.5043-5051

2018

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Experimental study on thermal runaway characteristic and residue of Li(Ni0.8Co0.1Mn0.1)O2 lithium-ion batteries induced by overcharge

Journal of energy storage, 2023-09, Vol.68, p.107705, Article 107705

2023

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Dynamic thermophysical modeling and parametric sensitivity analysis of flood cooling suppressing the thermal runaway propagation for electric bicycle battery

Journal of energy storage, 2024-09, Vol.98, p.113084, Article 113084

2024

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Preparation and performance of PVA films composited with 12-tungstogermanic heteropoly acid

Materials letters, 2001-08, Vol.50 (2), p.61-65

2001

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Suppression of unintentional carbon incorporation in AlGaN-based near-ultraviolet light-emitting diode grown on Si

Journal of nanophotonics, 2018-10, Vol.12 (4), p.1

2018

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Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure

Journal of semiconductors, 2018-04, Vol.39 (4), p.44002

2018

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Preparation and characterization of Y2O3-doped CeO2 ultrathin film made from Langmuir-Blodgett films

Thin solid films, 2002-10, Vol.418 (2), p.175-181

2002

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Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure Project supported by the National Key R&D Program (Nos. 2016YFB0400100, 2016YFB0400104), the National Natural Science Foundation of China (Nos. 61534007, 61404156, 61522407, 61604168, 61775230), the Key Frontier Scientific Research Program of the Chinese Academy of Sciences (No. QYZDB-SSW-JSC014), the Science and Technology Service Network Initiative of the Chinese Academy of Sciences, the

Journal of semiconductors, 2018-04, Vol.39 (4)

2018

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GaN grown on nano-patterned sapphire substrates

Journal of semiconductors, 2015-04, Vol.36 (4), p.26-29

孔静冯美鑫蔡金王辉王怀兵杨辉

2015

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GaN grown on nano-patterned sapphire substratesProject supported by the Suzhou Nanojoin Photonics Co., Ltd and the High-Tech Achievements Transformation of Jiangsu Province, China (No.BA2012010)

Journal of semiconductors, 2015-04, Vol.36 (4)

2015

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Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet

Chinese science bulletin, 2014-06, Vol.59 (16), p.1903-1906

2014

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Sterilization system for air purifier by combining ultraviolet light emitting diodes with TiO 2

Journal of chemical technology and biotechnology (1986), 2009-10, Vol.84 (10), p.1437-1440

2009

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Sterilization system for air purifier by combining ultraviolet light emitting diodes with TiO

Journal of chemical technology and biotechnology (1986), 2009, Vol.84 (10), p.1437-1440

2009

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Fabrication of Y2O3-doped CeO2 ultrathin film by newly developed component-controllable Langmuir-Blodgett method

Journal of materials science letters, 2001-01, Vol.20 (5), p.423-425

2001

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On-Chip Integration of GaN-Based Laser, Modulator, and Photodetector Grown on Si

Validation of Just-Released SWOT L2 KaRIn Beta Prevalidated Data Based on Restore the Marine Gravity Field and Its Application

Performance of Haiyang-2 Derived Gravity Field Products in Bathymetry Inversion

On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si

Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth

Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si

Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer

Enhanced performance of p-GaN by Mg δ doping

Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes

Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction

Sterilization system for air purifier by combining ultraviolet light emitting diodes with TiO2

Room-temperature electrically pumped InGaN-based microdisk laser grown on Si

Experimental study on thermal runaway characteristic and residue of Li(Ni0.8Co0.1Mn0.1)O2 lithium-ion batteries induced by overcharge

Dynamic thermophysical modeling and parametric sensitivity analysis of flood cooling suppressing the thermal runaway propagation for electric bicycle battery

Preparation and performance of PVA films composited with 12-tungstogermanic heteropoly acid

Suppression of unintentional carbon incorporation in AlGaN-based near-ultraviolet light-emitting diode grown on Si

Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure

Preparation and characterization of Y2O3-doped CeO2 ultrathin film made from Langmuir-Blodgett films

GaN grown on nano-patterned sapphire substrates

GaN grown on nano-patterned sapphire substratesProject supported by the Suzhou Nanojoin Photonics Co., Ltd and the High-Tech Achievements Transformation of Jiangsu Province, China (No.BA2012010)

Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet

Sterilization system for air purifier by combining ultraviolet light emitting diodes with TiO 2

Sterilization system for air purifier by combining ultraviolet light emitting diodes with TiO

Fabrication of Y2O3-doped CeO2 ultrathin film by newly developed component-controllable Langmuir-Blodgett method

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