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Deep learning using bulk RNA-seq data expands cell landscape identification in tumor microenvironment

Oncoimmunology, 2022-12, Vol.11 (1), p.2043662-2043662

2022

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pulseTD: RNA life cycle dynamics analysis based on pulse model of 4sU-seq time course sequencing data

PeerJ (San Francisco, CA), 2020-07, Vol.8, p.e9371-e9371, Article e9371

2020

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Improved interface properties and reliability for Hf-In-Zn-O semiconductor capacitors with an electric-double-layer gate dielectric by inserting a HfO2 interlayer

Thin solid films, 2013-07, Vol.540, p.261-265

2013

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A new approach to fuzzy evaluation of Metro operation safety based on entropy-weight and analytic hierarchy process

Journal of physics. Conference series, 2019-03, Vol.1176 (4), p.42086

2019

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Effectively Suppressed Short-Channel Effects in Small-Size MoS2 Transistors by Introducing Negative-Capacitance Effect Resulted From Ferroelectric HfZrO2 Film

IEEE transactions on electron devices, 2024-02, Vol.71 (2), p.1185-1190

2024

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Few-Layered MoS2 Field-Effect Transistors with a Vertical Channel of Sub-10 nm

ACS applied materials & interfaces, 2020-07, Vol.12 (29), p.32943-32950

2020

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Effectively Suppressed Short-Channel Effects in Small-Size MoS 2 Transistors by Introducing Negative-Capacitance Effect Resulted From Ferroelectric HfZrO 2 Film

IEEE transactions on electron devices, 2024-02, Vol.71 (2), p.1185-1190

2024

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A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2

Nanotechnology, 2018-06, Vol.29 (24), p.245201-245201

2018

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MoS2 transistors gated by ferroelectric HfZrO2 with MoS2/mica heterojunction interface

Nanotechnology, 2021-12, Vol.32 (49)

2021

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MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface

Nanotechnology, 2021-12, Vol.32 (49)

2021

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Top-Gated MoS₂ Negative-Capacitance Transistors Fabricated by an Integral-Transfer of Pulsed Laser Deposited HfZrO₂ on Mica

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3477-3482

2022

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Long-term stability of multilayer MoS2 transistors with mica gate dielectric

Nanotechnology, 2020-05, Vol.31 (18), p.185202-185202

2020

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MoS 2 transistors gated by ferroelectric HfZrO 2 with MoS 2 /mica heterojunction interface

Nanotechnology, 2021-12, Vol.32 (49), p.495201

2021

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Damage-free mica/MoS2 interface for high-performance multilayer MoS2 field-effect transistors

Nanotechnology, 2019-08, Vol.30 (34), p.345204-345204

2019

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Long-term stability of multilayer MoS 2 transistors with mica gate dielectric

Nanotechnology, 2020-05, Vol.31 (18), p.185202

2020

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Few-Layered MoS 2 Field-Effect Transistors with a Vertical Channel of Sub-10 nm

ACS applied materials & interfaces, 2020-07, Vol.12 (29), p.32943-32950

2020

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Damage-free mica/MoS 2 interface for high-performance multilayer MoS 2 field-effect transistors

Nanotechnology, 2019-08, Vol.30 (34), p.345204

2019

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A comparative study on top-gated and bottom-gated multilayer MoS 2 transistors with gate stacked dielectric of Al 2 O 3 /HfO 2

Nanotechnology, 2018-06, Vol.29 (24), p.245201

2018

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Cordial Volterra Integral Equations with Vanishing Delays

Journal of applied mathematics and physics, 2017, Vol.5 (2), p.294-302

2017

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Magneto-Optic Effects and Enhancement Methods

Proceedings of the 2020 2nd International Conference on Big Data and Artificial Intelligence, 2020, p.206-209

2020

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The Working Principles and Applications of Plasmonic Optical Tweezers

Proceedings of the 2020 2nd International Conference on Big Data and Artificial Intelligence, 2020, p.203-205

2020

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The combined method to synthesis silica nanoparticle by Stöber process

Journal of sol-gel science and technology, 2020-10, Vol.96 (1), p.108-120

2020

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FastClone is a probabilistic tool for deconvoluting tumor heterogeneity in bulk-sequencing samples

Nature communications, 2020-09, Vol.11 (1), p.4469-4469, Article 4469

2020

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Active disturbance rejection control for a pneumatic motion platform subject to actuator saturation: An extended state observer approach

Automatica (Oxford), 2019-09, Vol.107, p.353-361

2019

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Green chemical mechanical polishing of sapphire wafers using a novel slurry

Nanoscale, 2020-11, Vol.12 (44), p.22518-22526

2020

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Deep learning using bulk RNA-seq data expands cell landscape identification in tumor microenvironment

pulseTD: RNA life cycle dynamics analysis based on pulse model of 4sU-seq time course sequencing data

Improved interface properties and reliability for Hf-In-Zn-O semiconductor capacitors with an electric-double-layer gate dielectric by inserting a HfO2 interlayer

A new approach to fuzzy evaluation of Metro operation safety based on entropy-weight and analytic hierarchy process

Effectively Suppressed Short-Channel Effects in Small-Size MoS2 Transistors by Introducing Negative-Capacitance Effect Resulted From Ferroelectric HfZrO2 Film

Few-Layered MoS2 Field-Effect Transistors with a Vertical Channel of Sub-10 nm

Effectively Suppressed Short-Channel Effects in Small-Size MoS 2 Transistors by Introducing Negative-Capacitance Effect Resulted From Ferroelectric HfZrO 2 Film

A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2

MoS2 transistors gated by ferroelectric HfZrO2 with MoS2/mica heterojunction interface

MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface

Top-Gated MoS₂ Negative-Capacitance Transistors Fabricated by an Integral-Transfer of Pulsed Laser Deposited HfZrO₂ on Mica

Long-term stability of multilayer MoS2 transistors with mica gate dielectric

MoS 2 transistors gated by ferroelectric HfZrO 2 with MoS 2 /mica heterojunction interface

Damage-free mica/MoS2 interface for high-performance multilayer MoS2 field-effect transistors

Long-term stability of multilayer MoS 2 transistors with mica gate dielectric

Few-Layered MoS 2 Field-Effect Transistors with a Vertical Channel of Sub-10 nm

Damage-free mica/MoS 2 interface for high-performance multilayer MoS 2 field-effect transistors

A comparative study on top-gated and bottom-gated multilayer MoS 2 transistors with gate stacked dielectric of Al 2 O 3 /HfO 2

Cordial Volterra Integral Equations with Vanishing Delays

Magneto-Optic Effects and Enhancement Methods

The Working Principles and Applications of Plasmonic Optical Tweezers

The combined method to synthesis silica nanoparticle by Stöber process

FastClone is a probabilistic tool for deconvoluting tumor heterogeneity in bulk-sequencing samples

Active disturbance rejection control for a pneumatic motion platform subject to actuator saturation: An extended state observer approach

Green chemical mechanical polishing of sapphire wafers using a novel slurry

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