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Fermi-Level Pinning Mechanism in MoS2 Field-Effect Transistors Developed by Thermionic Emission Theory

Applied sciences, 2020-04, Vol.10 (8), p.2754

2020

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Fully parallel and pipelined sparse direct solver for large symmetric indefinite finite element problems

Computers & mathematics with applications (1987), 2024-12, Vol.175, p.447-469

2024

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Monopoly behavior of China’s manufacturing enterprises

China political economy, 2019-08, Vol.2 (1), p.157-179

Wang, Guidong

2019

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Monopoly behavior of China’s manufacturing enterprises: Rent-seeking or innovation-oriented

China political economy, 2019-01, Vol.2 (1), p.157-179

Wang, Guidong

2019

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High damping capacity of AlSi10Mg-NiTi lattice structure interpenetrating phase composites prepared by additive manufacturing and pressureless infiltration

Journal of alloys and compounds, 2022-06, Vol.905, p.164075, Article 164075

2022

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A GPU-Accelerated automated multilevel substructuring method for modal analysis of structures

Computers & structures, 2024-12, Vol.305, p.107516, Article 107516

2024

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Self-powered Sb2S3 photodetectors with efficient carrier transport enabled by compact vertical TiO2 nanorods

Optics letters, 2024-10

2024

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Effect of deformation of a flat plate specimen under in-plane blasting loading on 2D and 3D digital image correlation measurement

Applied optics (2004), 2021-07, Vol.60 (20), p.5765

2021

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Solvent-assisted exfoliation for high-quality molybdenum disulfide nanoflakes and relevant field-effect transistors

Journal of materials science, 2022-06, Vol.57 (24), p.11215-11225

2022

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Microstructure, Mechanical Properties, and Surface Integrity of Austenitic-Martensitic Stainless Steel Functionally Graded Materials Prepared by Laser Additive Manufacturing

Journal of materials engineering and performance, 2024-10, Vol.33 (20), p.10805-10821

2024

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Effect of SiC nanofluid minimum quantity lubrication on the performance of the ceramic tool in cutting hardened steel

Journal of manufacturing processes, 2022-12, Vol.84, p.539-554

2022

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Employing Poly(4‐Vinylpyridine) as the Dielectrics for Enhanced Molybdenum Disulfide Field‐Effect Transistors

Physica status solidi. A, Applications and materials science, 2022-08, Vol.219 (16), p.n/a

2022

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Dynamic performance evaluation of an inspection wagon for urban railway tracks

Measurement : journal of the International Measurement Confederation, 2021-01, Vol.170, p.108704, Article 108704

2021

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Molybdenum disulfide field-effect transistors with enhanced charge-injection by inserting ultrathin pentacene layer under source/drain electrodes

Vacuum, 2022-12, Vol.206, p.111500, Article 111500

2022

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An explicit expression for Euclidean self-dual cyclic codes of length 2 over Galois ring GR(4,m)

Finite fields and their applications, 2021-06, Vol.72, p.101817, Article 101817

2021

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An explicit expression for Euclidean self-dual cyclic codes of length 2k over Galois ring GR(4,m)

Finite fields and their applications, 2021-06, Vol.72, Article 101817

2021

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Self-dual cyclic codes over $${\mathbb {Z}}_4$$ of length 4n

Applicable algebra in engineering, communication and computing, 2022-01, Vol.33 (1), p.21-51

2022

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On the construction of self-dual cyclic codes over Z4 with arbitrary even length

Cryptography and communications, 2022-09, Vol.14 (5), p.1117-1143

2022

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On the construction of self-dual cyclic codes over $$\mathbb {Z}_{4}$$ with arbitrary even length

Cryptography and communications, 2022-09, Vol.14 (5), p.1117-1143

2022

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Methods and Systems for Sharing Economic Management File Resources Based on Big Data

2024 Third International Conference on Distributed Computing and Electrical Circuits and Electronics (ICDCECE), 2024, p.1-5

Wang, Guidong

2024

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An explicit expression for Euclidean self-dual cyclic codes over F2m+uF2m of length 2s

Discrete mathematics, 2021-05, Vol.344 (5), Article 112323

2021

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An explicit expression for Euclidean self-dual cyclic codes over F 2 m + u F 2 m of length 2 s

Discrete mathematics, 2021-05, Vol.344 (5), p.112323, Article 112323

2021

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Antiambipolar, ambipolar, and unipolar charge transport in organic transistors based on a single vertical P-N heterointerface

Journal of materials chemistry. C, Materials for optical and electronic devices, 2023-06, Vol.11 (22), p.7283-7288

2023

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Self-dual cyclic codes over Z4 of length 4n

Applicable algebra in engineering, communication and computing, 2022, Vol.33 (1), p.21-51

2022

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Tianwen-1 Mars entry vehicle trajectory and atmosphere reconstruction preliminary analysis

Astrodynamics, 2022-03, Vol.6 (1), p.81-91

2022

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Fermi-Level Pinning Mechanism in MoS2 Field-Effect Transistors Developed by Thermionic Emission Theory

Fully parallel and pipelined sparse direct solver for large symmetric indefinite finite element problems

Monopoly behavior of China’s manufacturing enterprises

Monopoly behavior of China’s manufacturing enterprises: Rent-seeking or innovation-oriented

High damping capacity of AlSi10Mg-NiTi lattice structure interpenetrating phase composites prepared by additive manufacturing and pressureless infiltration

A GPU-Accelerated automated multilevel substructuring method for modal analysis of structures

Self-powered Sb2S3 photodetectors with efficient carrier transport enabled by compact vertical TiO2 nanorods

Effect of deformation of a flat plate specimen under in-plane blasting loading on 2D and 3D digital image correlation measurement

Solvent-assisted exfoliation for high-quality molybdenum disulfide nanoflakes and relevant field-effect transistors

Microstructure, Mechanical Properties, and Surface Integrity of Austenitic-Martensitic Stainless Steel Functionally Graded Materials Prepared by Laser Additive Manufacturing

Effect of SiC nanofluid minimum quantity lubrication on the performance of the ceramic tool in cutting hardened steel

Employing Poly(4‐Vinylpyridine) as the Dielectrics for Enhanced Molybdenum Disulfide Field‐Effect Transistors

Dynamic performance evaluation of an inspection wagon for urban railway tracks

Molybdenum disulfide field-effect transistors with enhanced charge-injection by inserting ultrathin pentacene layer under source/drain electrodes

An explicit expression for Euclidean self-dual cyclic codes of length 2 over Galois ring GR(4,m)

An explicit expression for Euclidean self-dual cyclic codes of length 2k over Galois ring GR(4,m)

Self-dual cyclic codes over $${\mathbb {Z}}_4$$ of length 4n

On the construction of self-dual cyclic codes over Z4 with arbitrary even length

On the construction of self-dual cyclic codes over $$\mathbb {Z}_{4}$$ with arbitrary even length

Methods and Systems for Sharing Economic Management File Resources Based on Big Data

An explicit expression for Euclidean self-dual cyclic codes over F2m+uF2m of length 2s

An explicit expression for Euclidean self-dual cyclic codes over F 2 m + u F 2 m of length 2 s

Antiambipolar, ambipolar, and unipolar charge transport in organic transistors based on a single vertical P-N heterointerface

Self-dual cyclic codes over Z4 of length 4n

Tianwen-1 Mars entry vehicle trajectory and atmosphere reconstruction preliminary analysis

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