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ZnO UV Photodetectors Modified by Ag Nanoparticles Using All-Inkjet-Printing

Nanoscale research letters, 2020-09, Vol.15 (1), p.176-176, Article 176

2020

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Efficient Mediated Quantum Secret Sharing Protocol in a Restricted Quantum Environment

Annalen der Physik, 2023-11, Vol.535 (11)

2023

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Evaluations of 3D-Printed Surgical Mask Tension Release Bands for Common COVID-19 Use with Biomechanics, Sensor Array System, and Finite Element Analysis

Sensors (Basel, Switzerland), 2022-08, Vol.22 (15), p.5897

2022

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Hormone replacement therapy is associated with reduced hepatocellular carcinoma risk and improved survival in postmenopausal women with hepatitis B: A nationwide long-term population-based cohort study

PloS one, 2022-07, Vol.17 (7), p.e0271790-e0271790

2022

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High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4859-4863

2022

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High Uniformity Normally-OFF p-GaN Gate HEMT Using Self-Terminated Digital Etching Technique

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4820-4825

2018

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Prevention of Viral Hepatitis and HIV Infection among People Who Inject Drugs: A Systematic Review and Meta-Analysis

Viruses, 2024-01, Vol.16 (1), p.142

2024

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Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT With AlGaN Cap-Layer

IEEE electron device letters, 2021-10, Vol.42 (10), p.1432-1435

2021

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Pharmacoepidemiological Research on N-Nitrosodimethylamine-Contaminated Ranitidine Use and Long-Term Cancer Risk: A Population-Based Longitudinal Cohort Study

International journal of environmental research and public health, 2022-09, Vol.19 (19), p.12469

2022

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Cryptanalysis of quantum private comparison with six-particle maximally entangled states

Modern physics letters A, 2023-03, Vol.38 (7)

2023

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A self-driven photodetector based on a SnS2/WS2 van der Waals heterojunction with an Al2O3 capping layer

Chinese physics B, 2023-01, Vol.32 (1), p.659-665

2023

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Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer

Materials, 2022-05, Vol.15 (10), p.3503

2022

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Hepatitis C virus has a genetically determined lymphotropism through co-receptor B7.2

Nature communications, 2017-01, Vol.8 (1), p.13882-13882, Article 13882

2017

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High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.201-206

2018

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Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.229-234

2020

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The electrical and physical characteristics of Mg-doped ZnO sensing membrane in EIS (electrolyte–insulator–semiconductor) for glucose sensing applications

Results in physics, 2020-03, Vol.16, p.102976, Article 102976

2020

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Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate

Micromachines (Basel), 2022-05, Vol.13 (5), p.807

2022

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RF Performance of In Situ SiNx Gate Dielectric AlGaN/GaN MISHEMT on 6-in Silicon-on-Insulator Substrate

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4065-4070

2017

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High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

Micromachines (Basel), 2021-05, Vol.12 (5), p.509

2021

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Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

Membranes (Basel), 2021-10, Vol.11 (11), p.848

2021

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Optimizing Spinal Fusion Cage Design to Improve Bone Substitute Filling on Varying Disc Heights: A 3D Printing Study

Bioengineering (Basel), 2023-10, Vol.10 (11), p.1250

2023

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Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

Membranes (Basel), 2021-09, Vol.11 (10), p.727

2021

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Biomechanical comparisons of F.E.R.I. techniques with different type of intramedullary screws fixation for Jones fractures

Frontiers in bioengineering and biotechnology, 2024-05, Vol.12, p.1389127-1389127

2024

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Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor

Micromachines (Basel), 2022-09, Vol.13 (9), p.1554

2022

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Trochanteric Nails for the Reduction of Intertrochanteric Fractures: A Biomechanical Analysis Based on Finite Element Analysis and DIC System

Journal of medical and biological engineering, 2022-08, Vol.42 (4), p.459-468

2022

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ZnO UV Photodetectors Modified by Ag Nanoparticles Using All-Inkjet-Printing

Efficient Mediated Quantum Secret Sharing Protocol in a Restricted Quantum Environment

Evaluations of 3D-Printed Surgical Mask Tension Release Bands for Common COVID-19 Use with Biomechanics, Sensor Array System, and Finite Element Analysis

Hormone replacement therapy is associated with reduced hepatocellular carcinoma risk and improved survival in postmenopausal women with hepatitis B: A nationwide long-term population-based cohort study

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

High Uniformity Normally-OFF p-GaN Gate HEMT Using Self-Terminated Digital Etching Technique

Prevention of Viral Hepatitis and HIV Infection among People Who Inject Drugs: A Systematic Review and Meta-Analysis

Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT With AlGaN Cap-Layer

Pharmacoepidemiological Research on N-Nitrosodimethylamine-Contaminated Ranitidine Use and Long-Term Cancer Risk: A Population-Based Longitudinal Cohort Study

Cryptanalysis of quantum private comparison with six-particle maximally entangled states

A self-driven photodetector based on a SnS2/WS2 van der Waals heterojunction with an Al2O3 capping layer

Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer

Hepatitis C virus has a genetically determined lymphotropism through co-receptor B7.2

High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design

Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region

The electrical and physical characteristics of Mg-doped ZnO sensing membrane in EIS (electrolyte–insulator–semiconductor) for glucose sensing applications

Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate

RF Performance of In Situ SiNx Gate Dielectric AlGaN/GaN MISHEMT on 6-in Silicon-on-Insulator Substrate

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

Optimizing Spinal Fusion Cage Design to Improve Bone Substitute Filling on Varying Disc Heights: A 3D Printing Study

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

Biomechanical comparisons of F.E.R.I. techniques with different type of intramedullary screws fixation for Jones fractures

Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor

Trochanteric Nails for the Reduction of Intertrochanteric Fractures: A Biomechanical Analysis Based on Finite Element Analysis and DIC System

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