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Effect of the top electrode material on the resistive switching of TiO2 thin film

Microelectronic engineering, 2010-02, Vol.87 (2), p.98-103

2010

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Radio frequency sputter deposition of single phase cuprous oxide using Cu2O as a target material and its resistive switching properties

Thin solid films, 2008-11, Vol.517 (2), p.967-971

2008

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Resistance Switching Behaviors of Hafnium Oxide Films Grown by MOCVD for Nonvolatile Memory Applications

Journal of the Electrochemical Society, 2008, Vol.155 (2), p.H92

2008

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Enhanced mass sensitivity of ZnO nanorod-grown quartz crystal microbalances

Sensors and actuators. B, Chemical, 2009-01, Vol.135 (2), p.444-448

2009

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Effect of post annealing on the resistive switching of TiO2 thin film

Microelectronic engineering, 2009-11, Vol.86 (11), p.2153-2156

2009

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NbO2-based low power and cost effective 1S1R switching for high density cross point ReRAM Application

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014, p.1-2

2014

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Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2

Journal of the Electrochemical Society, 2011, Vol.158 (4), p.H417

2011

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Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO2 Resistive Material Depending on the Thickness of Ti

Jpn J Appl Phys, 2011-04, Vol.50 (4), p.04DD14-04DD14-4

2011

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Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide

2010 Proceedings of the European Solid State Device Research Conference, 2010, p.400-403

2010

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The effect of crystallinity of HfO2 on the resistive memory switching reliability

2011 International Reliability Physics Symposium, 2011, p.6B.5.1-6B.5.5

2011

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Effect of the top electrode material on the resistive switching of TiO(2) thin film

Microelectronic engineering, 2010-02, Vol.87 (2), p.98-103

2010

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Effect of the top electrode material on the resistive switching of TiO 2 thin film

Microelectronic engineering, 2010, Vol.87 (2), p.98-103

2010

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Effect of post annealing on the resistive switching of TiO(2) thin film

Microelectronic engineering, 2009-11, Vol.86 (11), p.2153-2156

2009

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Effect of post annealing on the resistive switching of TiO 2 thin film

Microelectronic engineering, 2009, Vol.86 (11), p.2153-2156

2009

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Improvement of characteristics of NbO2 selector and full integration of 4F2 2x-nm tech 1S1R ReRAM

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.10.3.1-10.3.4

2015

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Radio frequency sputter deposition of single phase cuprous oxide using Cu 2O as a target material and its resistive switching properties

Thin solid films, 2008, Vol.517 (2), p.967-971

2008

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Publisher’s Note: Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide: TiO2, ZrO2, and HfO2 [J. Electrochem. Soc., 158, H417 (2011)]

Journal of the Electrochemical Society, 2011, Vol.158 (5), p.S12

2011

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Effect of Inserting Al2O3 Layer and Device Structure in HfO2-Based ReRAM for Low Power Operation

2012 4th IEEE International Memory Workshop, 2012, p.1-4

2012

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Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO 2 Resistive Material Depending on the Thickness of Ti

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

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Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO 2 Resistive Material Depending on the Thickness of Ti

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

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SGLT2 inhibition modulates NLRP3 inflammasome activity via ketones and insulin in diabetes with cardiovascular disease

Nature communications, 2020-05, Vol.11 (1), p.2127-11, Article 2127

2020

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Osimertinib Plus Durvalumab versus Osimertinib Monotherapy in EGFR T790M–Positive NSCLC following Previous EGFR TKI Therapy: CAURAL Brief Report

Journal of thoracic oncology, 2019-05, Vol.14 (5), p.933-939

2019

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Phenotypic polarization of activated astrocytes: the critical role of lipocalin-2 in the classical inflammatory activation of astrocytes

The Journal of immunology (1950), 2013-11, Vol.191 (10), p.5204-5219

2013

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Altered expression of fucosylation pathway genes is associated with poor prognosis and tumor metastasis in non‑small cell lung cancer

International journal of oncology, 2020-02, Vol.56 (2), p.559-567

2020

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Tepotinib plus gefitinib in patients with EGFR-mutant non-small-cell lung cancer with MET overexpression or MET amplification and acquired resistance to previous EGFR inhibitor (INSIGHT study): an open-label, phase 1b/2, multicentre, randomised trial

The lancet respiratory medicine, 2020-11, Vol.8 (11), p.1132-1143

2020

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Effect of the top electrode material on the resistive switching of TiO2 thin film

Radio frequency sputter deposition of single phase cuprous oxide using Cu2O as a target material and its resistive switching properties

Resistance Switching Behaviors of Hafnium Oxide Films Grown by MOCVD for Nonvolatile Memory Applications

Enhanced mass sensitivity of ZnO nanorod-grown quartz crystal microbalances

Effect of post annealing on the resistive switching of TiO2 thin film

NbO2-based low power and cost effective 1S1R switching for high density cross point ReRAM Application

Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2

Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO2 Resistive Material Depending on the Thickness of Ti

Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide

The effect of crystallinity of HfO2 on the resistive memory switching reliability

Effect of the top electrode material on the resistive switching of TiO(2) thin film

Effect of the top electrode material on the resistive switching of TiO 2 thin film

Effect of post annealing on the resistive switching of TiO(2) thin film

Effect of post annealing on the resistive switching of TiO 2 thin film

Improvement of characteristics of NbO2 selector and full integration of 4F2 2x-nm tech 1S1R ReRAM

Radio frequency sputter deposition of single phase cuprous oxide using Cu 2O as a target material and its resistive switching properties

Publisher’s Note: Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide: TiO2, ZrO2, and HfO2 [J. Electrochem. Soc., 158, H417 (2011)]

Effect of Inserting Al2O3 Layer and Device Structure in HfO2-Based ReRAM for Low Power Operation

Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO 2 Resistive Material Depending on the Thickness of Ti

Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO 2 Resistive Material Depending on the Thickness of Ti

SGLT2 inhibition modulates NLRP3 inflammasome activity via ketones and insulin in diabetes with cardiovascular disease

Osimertinib Plus Durvalumab versus Osimertinib Monotherapy in EGFR T790M–Positive NSCLC following Previous EGFR TKI Therapy: CAURAL Brief Report

Phenotypic polarization of activated astrocytes: the critical role of lipocalin-2 in the classical inflammatory activation of astrocytes

Altered expression of fucosylation pathway genes is associated with poor prognosis and tumor metastasis in non‑small cell lung cancer

Tepotinib plus gefitinib in patients with EGFR-mutant non-small-cell lung cancer with MET overexpression or MET amplification and acquired resistance to previous EGFR inhibitor (INSIGHT study): an open-label, phase 1b/2, multicentre, randomised trial

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