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Highly-stable black phosphorus field-effect transistors with low density of oxide traps

NPJ 2D materials and applications, 2017-12, Vol.1 (1), p.1-7, Article 23

2017

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Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators

NPJ 2D materials and applications, 2024-03, Vol.8 (1), p.23-10, Article 23

2024

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Superior NBTI in High-k SiGe Transistors-Part II: Theory

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2099-2105

2017

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A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.3B.1-1-3B.1-7

2024

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Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors

2020 IEEE International Integrated Reliability Workshop (IIRW), 2020, p.1-6

2020

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Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.10A.1-1-10A.1-6

2022

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Microscopic oxide defects causing BTI, RTN, and SILC on high-k FinFETs

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015, p.144-147

2015

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Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects

2019 IEEE International Integrated Reliability Workshop (IIRW), 2019, p.1-5

2019

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Statistical Characterization of BTI and RTN using Integrated pMOS Arrays

2019 IEEE International Integrated Reliability Workshop (IIRW), 2019, p.1-5

2019

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Comphy — A compact-physics framework for unified modeling of BTI

Microelectronics and reliability, 2018-06, Vol.85, p.49-65

2018

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Advanced characterization of oxide traps: The dynamic time-dependent defect spectroscopy

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.2D.2.1-2D.2.7

2013

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The Importance of Secondary Generated Carriers in Modeling of Full Bias Space

2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2022, p.265-267

2022

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A systematic study of charge trapping in single-layer double-gated GFETs

2016 74th Annual Device Research Conference (DRC), 2016, p.1-2

2016

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Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations

Materials science forum, 2023-05, Vol.1090, p.119-126

2023

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A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

Microelectronics and reliability, 2018-02, Vol.81, p.186-194

2018

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Hot-carrier degradation in single-layer double-gated graphene field-effect transistors

2015 IEEE International Reliability Physics Symposium, 2015, p.XT.2.1-XT.2.6

2015

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Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-6

2020

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Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs

Solid-state electronics, 2019-06, Vol.156, p.41-47

2019

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A unified perspective of RTN and BTI

2014 IEEE International Reliability Physics Symposium, 2014, p.4A.5.1-4A.5.7

2014

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Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS

2021 IEEE International Electron Devices Meeting (IEDM), 2021, p.31.3.1-31.3.4

2021

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Impact of Single Defects on NBTI and PBTI Recovery in SiO2 Transistors

2022 IEEE International Integrated Reliability Workshop (IIRW), 2022, p.1-5

2022

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The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-6

2020

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CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States

2021 IEEE International Reliability Physics Symposium (IRPS), 2021, p.1-6

2021

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Complete extraction of defect bands responsible for instabilities in n and pFinFETs

2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

2016

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First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.24.1.1-24.1.4

2019

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Highly-stable black phosphorus field-effect transistors with low density of oxide traps

Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators

Superior NBTI in High-k SiGe Transistors-Part II: Theory

A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs

Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors

Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors

Microscopic oxide defects causing BTI, RTN, and SILC on high-k FinFETs

Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects

Statistical Characterization of BTI and RTN using Integrated pMOS Arrays

Comphy — A compact-physics framework for unified modeling of BTI

Advanced characterization of oxide traps: The dynamic time-dependent defect spectroscopy

The Importance of Secondary Generated Carriers in Modeling of Full Bias Space

A systematic study of charge trapping in single-layer double-gated GFETs

Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

Hot-carrier degradation in single-layer double-gated graphene field-effect transistors

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures

Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs

A unified perspective of RTN and BTI

Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS

Impact of Single Defects on NBTI and PBTI Recovery in SiO2 Transistors

The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release

CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States

Complete extraction of defect bands responsible for instabilities in n and pFinFETs

First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation

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