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Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Advanced materials (Weinheim), 2017-12, Vol.29 (47), p.n/a

2017

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Advantages of microsphere-assisted super-resolution imaging technique over solid immersion lens and confocal microscopies

Applied physics letters, 2014-02, Vol.104 (6)

2014

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Field emission characteristics of AlGaN/GaN nanoscale lateral vacuum diodes

Journal of applied physics, 2024-05, Vol.135 (20)

2024

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Overcoming the diffraction limit of imaging nanoplasmonic arrays by microspheres and microfibers

Optics express, 2015-09, Vol.23 (19), p.24484-24496

2015

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Coupling of Epsilon-Near-Zero Mode to Gap Plasmon Mode for Flat-Top Wideband Perfect Light Absorption

ACS photonics, 2018-03, Vol.5 (3), p.776-781

2018

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Super-resolution microscopy by movable thin-films with embedded microspheres: Resolution analysis

Annalen der Physik, 2015-08, Vol.527 (7-8), p.513-522

2015

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Experimentally Validated Gate-Lag Simulations of AlGaN/GaN HEMTs Using Fermi Kinetics Transport

IEEE transactions on electron devices, 2023-02, Vol.70 (2), p.435-442

2023

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Deterministic Nanoassembly of Quasi-Three-Dimensional Plasmonic Nanoarrays with Arbitrary Substrate Materials and Structures

Nano letters, 2019-08, Vol.19 (8), p.5796-5805

2019

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Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

Applied physics letters, 2016-11, Vol.109 (21)

2016

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ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

IEEE electron device letters, 2019-07, Vol.40 (7), p.1056-1059

2019

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RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band

IEEE electron device letters, 2020-08, Vol.41 (8), p.1181-1184

2020

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Lateral β-Ga2O3 field effect transistors

Semiconductor science and technology, 2020, Vol.35 (1)

2020

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Enhancement of resolution in microspherical nanoscopy by coupling of fluorescent objects to plasmonic metasurfaces

Applied physics letters, 2019-04, Vol.114 (13)

2019

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Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band

IEEE electron device letters, 2020-07, Vol.41 (7), p.989-992

2020

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Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit

IEEE electron device letters, 2022-08, Vol.43 (8), p.1307-1310

2022

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Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1805-1811

2024

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Edge Doping Effect to the Surface Plasmon Resonances in Graphene Nanoribbons

Journal of physical chemistry. C, 2019-08, Vol.123 (32), p.19820-19827

2019

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Flexible Gallium Nitride: Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices (Adv. Mater. 47/2017)

Advanced materials (Weinheim), 2017-12, Vol.29 (47), p.n/a

2017

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Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates

IEEE electron device letters, 2010-02, Vol.31 (2), p.99-101

2010

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Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-03, Vol.31 (2)

2013

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High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator

IEEE electron device letters, 2011-12, Vol.32 (12), p.1677-1679

2011

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Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency

IEEE electron device letters, 2010-06, Vol.31 (6), p.561-563

2010

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Structured Waveguide Grating for Controlled Resonant Reflection

2023 IEEE Research and Applications of Photonics in Defense Conference (RAPID), 2023, p.1-2

2023

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Exploring the Field Emission Capabilities of ALGAN/GAN Nanoscale Vacuum Diodes

2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 2023, p.117-119

2023

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Pole-based analysis of coupled modes in metal–insulator–metal plasmonic structures

Journal of the Optical Society of America. B, Optical physics, 2021-03, Vol.38 (3), p.776

2021

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Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Advantages of microsphere-assisted super-resolution imaging technique over solid immersion lens and confocal microscopies

Field emission characteristics of AlGaN/GaN nanoscale lateral vacuum diodes

Overcoming the diffraction limit of imaging nanoplasmonic arrays by microspheres and microfibers

Coupling of Epsilon-Near-Zero Mode to Gap Plasmon Mode for Flat-Top Wideband Perfect Light Absorption

Super-resolution microscopy by movable thin-films with embedded microspheres: Resolution analysis

Experimentally Validated Gate-Lag Simulations of AlGaN/GaN HEMTs Using Fermi Kinetics Transport

Deterministic Nanoassembly of Quasi-Three-Dimensional Plasmonic Nanoarrays with Arbitrary Substrate Materials and Structures

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band

Lateral β-Ga2O3 field effect transistors

Enhancement of resolution in microspherical nanoscopy by coupling of fluorescent objects to plasmonic metasurfaces

Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band

Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit

Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

Edge Doping Effect to the Surface Plasmon Resonances in Graphene Nanoribbons

Flexible Gallium Nitride: Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices (Adv. Mater. 47/2017)

Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors

High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator

Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency

Structured Waveguide Grating for Controlled Resonant Reflection

Exploring the Field Emission Capabilities of ALGAN/GAN Nanoscale Vacuum Diodes

Pole-based analysis of coupled modes in metal–insulator–metal plasmonic structures

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