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High fT and fMAX for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate

Electronics letters, 2015-08, Vol.51 (17), p.1366-1368

2015

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Identification of local gate leakage with electroluminescence using AlGaN/GaN HEMTs

Electronics letters, 2014-07, Vol.50 (16), p.1162-1164

2014

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1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate

IEEE electron device letters, 2012-10, Vol.33 (10), p.1375-1377

2012

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100 W C-band single-chip GaN FET power amplifier

Electronics letters, 2006-03, Vol.42 (5), p.283-285

2006

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370 W output power GaN-FET amplifier for W-CDMA cellular base stations

Electronics letters, 2005-12, Vol.41 (25), p.1371-1373

2005

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A GaAs-based field-modulating plate HFET with improved WCDMA peak-output-power characteristics

IEEE transactions on electron devices, 2003-09, Vol.50 (9), p.1983-1987

2003

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280 W output power single-ended amplifier using single-die GaN-FET for W-CDMA cellular base stations

Electronics letters, 2005-09, Vol.41 (18), p.1004-1005

2005

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Pulsed 0.75 kW output single-ended GaN-FET amplifier for L/S band applications

Electronics letters, 2006-11, Vol.42 (23), p.1349-1350

2006

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Kelvin probe force microscopy study of surface potential transients in cleaved AlGaN∕GaN high electron mobility transistors

Applied physics letters, 2007-05, Vol.90 (21)

2007

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Low ohmic-contact resistance in recessed-gate normally-off AlGaN/GaN MIS-HEMT with δ-doped GaN Cap Layer

2015 73rd Annual Device Research Conference (DRC), 2015, p.59-60

2015

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230W C-band GaN-FET power amplifier

Electronics letters, 2007-08, Vol.43 (17), p.927-929

2007

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C-band GaAs FET power amplifiers with 70-W output power and 50% PAE for satellite communication use

IEEE journal of solid-state circuits, 2005-10, Vol.40 (10), p.2054-2060

2005

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230 W C-band GaN-FET power amplifier

Electronics letters, 2007-08, Vol.43 (17), p.927-929

2007

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High f sub()Tand f sub(MAX) for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate

Electronics letters, 2015-08, Vol.51 (17), p.1366-1368

2015

Volltextzugriff (PDF)

High f T and f MAX for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate

Electronics letters, 2015-08, Vol.51 (17), p.1366-1368

2015

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CW 20-W AlGaN/GaN FET Power Amplifier for Quasi-Millimeter Wave Applications

2007 IEEE Compound Semiconductor Integrated Circuits Symposium, 2007, p.1-4

2007

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Fluorine diffusion and accumulation in Si step-doped InAlAs layers

Applied physics letters, 1998-10, Vol.73 (17), p.2459-2461

1998

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C-band Single-Chip GaN-FET Power Amplifiers with 60-W Output Power

IEEE MTT-S International Microwave Symposium Digest, 2005, 2005, p.491-494

2005

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Electrical properties of InAlAs/InGaAs modulation doped structure after SiN passivated annealing

Journal of applied physics, 1997-02, Vol.81 (3), p.1311-1314

1997

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InAlAs/InGaAs channel composition modulated transistors with InAs channel and AlAs/InAs superlattice barrier layer

IEEE electron device letters, 1998-08, Vol.19 (8), p.300-302

1998

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C-band GaAs FET power amplifiers with 70-W output power and 50% PAE for satellite communication use

IEEE Compound Semiconductor Integrated Circuit Symposium, 2004, 2004, p.57-60

2004

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Ultra-wideband (UWB) RF front-end module implementation for multi-band OFDM system

IEEE MTT-S International Microwave Symposium Digest, 2005, 2005, p.1871-1874

2005

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Measurement-base thermal circuit modeling of GaN HEMT

2022 Asia-Pacific Microwave Conference (APMC), 2022, p.602-604

2022

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1.4 kV breakdown voltage for MOCVD grown AlGaN/GaN HEMTs on Si substrate

70th Device Research Conference, 2012, p.53-54

2012

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Reduction of Thermal Resistance of High-Power Amplifiers by Carbon Fiber-Reinforced Carbon Composite-Based Package

IEEE transactions on components, packaging, and manufacturing technology (2011), 2012-01, Vol.2 (1), p.95-101

2012

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High fT and fMAX for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate

Identification of local gate leakage with electroluminescence using AlGaN/GaN HEMTs

1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate

100 W C-band single-chip GaN FET power amplifier

370 W output power GaN-FET amplifier for W-CDMA cellular base stations

A GaAs-based field-modulating plate HFET with improved WCDMA peak-output-power characteristics

280 W output power single-ended amplifier using single-die GaN-FET for W-CDMA cellular base stations

Pulsed 0.75 kW output single-ended GaN-FET amplifier for L/S band applications

Kelvin probe force microscopy study of surface potential transients in cleaved AlGaN∕GaN high electron mobility transistors

Low ohmic-contact resistance in recessed-gate normally-off AlGaN/GaN MIS-HEMT with δ-doped GaN Cap Layer

230W C-band GaN-FET power amplifier

C-band GaAs FET power amplifiers with 70-W output power and 50% PAE for satellite communication use

230 W C-band GaN-FET power amplifier

High f sub()Tand f sub(MAX) for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate

High f T and f MAX for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate

CW 20-W AlGaN/GaN FET Power Amplifier for Quasi-Millimeter Wave Applications

Fluorine diffusion and accumulation in Si step-doped InAlAs layers

C-band Single-Chip GaN-FET Power Amplifiers with 60-W Output Power

Electrical properties of InAlAs/InGaAs modulation doped structure after SiN passivated annealing

InAlAs/InGaAs channel composition modulated transistors with InAs channel and AlAs/InAs superlattice barrier layer

C-band GaAs FET power amplifiers with 70-W output power and 50% PAE for satellite communication use

Ultra-wideband (UWB) RF front-end module implementation for multi-band OFDM system

Measurement-base thermal circuit modeling of GaN HEMT

1.4 kV breakdown voltage for MOCVD grown AlGaN/GaN HEMTs on Si substrate

Reduction of Thermal Resistance of High-Power Amplifiers by Carbon Fiber-Reinforced Carbon Composite-Based Package

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