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A comparative study of the annealing behavior of Cu(In,Ga)(S,Se) 2 based solar cells with an indium sulfide buffer layer, partly submitted to wet chemical treatments

Journal of applied physics, 2015-03, Vol.117 (9), p.94503

2015

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Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment

Materials, 2010-11, Vol.3 (11), p.4892-4914

2010

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Surface potentials of magnetron sputtered transparent conducting oxides

Thin solid films, 2009-12, Vol.518 (4), p.1197-1203

2009

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A comparative study of the annealing behavior of Cu(In,Ga)(S,Se){sub 2} based solar cells with an indium sulfide buffer layer, partly submitted to wet chemical treatments

Journal of applied physics, 2015-03, Vol.117 (9)

2015

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Surface potentials of magnetron sputtered transparent conducting oxides

Thin solid films, 2010, Vol.518 (4), p.1197-1203

2010

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Atomic Layer Deposition of Al2O3 onto Sn-Doped In2O3: Absence of Self-Limited Adsorption during Initial Growth by Oxygen Diffusion from the Substrate and Band Offset Modification by Fermi Level Pinning in Al2O3

Chemistry of materials, 2012-12, Vol.24 (23), p.4503-4510

2012

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In situ Hall effect and conductivity measurements of ITO thin films

Solid state ionics, 2014-09, Vol.262, p.636-639

2014

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Orientation dependent ionization potential of In2O3: a natural source for inhomogeneous barrier formation at electrode interfaces in organic electronics

Journal of physics. Condensed matter, 2011-08, Vol.23 (33), p.334203-334203

2011

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Sputtered Zn(O,S) buffer layers for CIGS solar modules—from lab to pilot production

Progress in photovoltaics, 2017-08, Vol.25 (8), p.696-705

2017

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Chemical and electronic properties of the ITO/Al2O3 interface

Physical chemistry chemical physics : PCCP, 2009-01, Vol.11 (17), p.3049

2009

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Barrier heights, polarization switching, and electrical fatigue in Pb ( Zr , Ti ) O 3 ceramics with different electrodes

Journal of applied physics, 2010-11, Vol.108 (10), p.104106-104106-7

2010

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Barrier heights, polarization switching, and electrical fatigue in Pb(Zr,Ti)O3 ceramics with different electrodes

Journal of applied physics, 2010-11, Vol.108 (10)

2010

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Energy level alignment and electrical properties of (Ba,Sr)TiO3/Al2O3 interfaces for tunable capacitors

Journal of applied physics, 2010-07, Vol.108 (1)

2010

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Self-limited oxygen exchange kinetics at SnO2 surfaces

Physical chemistry chemical physics : PCCP, 2011-02, Vol.13 (8), p.3223-3226

2011

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Atomic Layer Deposition of Al 2 O 3 onto Sn-Doped In 2 O 3 : Absence of Self-Limited Adsorption during Initial Growth by Oxygen Diffusion from the Substrate and Band Offset Modification by Fermi Level Pinning in Al 2 O 3

Chemistry of materials, 2012-12, Vol.24 (23), p.4503-4510

2012

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Chemical and electronic properties of the ITO/Al(2)O(3) interface

Physical chemistry chemical physics : PCCP, 2009-05, Vol.11 (17), p.3049-3054

2009

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Self-limited oxygen exchange kinetics at SnO2 surfaces: Scattering Methods applied to Soft Matter

Physical chemistry chemical physics : PCCP, 2011, Vol.13 (8), p.3223-3226

2011

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Chemical and electronic properties of the ITO/Al2O3 interface: Physical chemistry of solids - the science behind materials engineering

Physical chemistry chemical physics : PCCP, 2009, Vol.11 (17), p.3049-3054

2009

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Energy level alignment and electrical properties of ( Ba , Sr ) TiO 3 / Al 2 O 3 interfaces for tunable capacitors

Journal of applied physics, 2010-07, Vol.108 (1), p.014113-014113-5

2010

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Orientation dependent ionization potential of In sub(2)O sub(3): a natural source for inhomogeneous barrier formation at electrode interfaces in organic electronics

Journal of physics. Condensed matter, 2011-08, Vol.23 (33), p.1-8

2011

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Orientation dependent ionization potential of In 2 O 3 : a natural source for inhomogeneous barrier formation at electrode interfaces in organic electronics

Journal of physics. Condensed matter, 2011-08, Vol.23 (33), p.334203

2011

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Orientation dependent ionization potential of In2O3: a natural source for inhomogeneous barrier formation at electrode interfaces in organic electronics : SEMICONDUCTING OXIDES

Journal of physics. Condensed matter, 2011, Vol.23 (33)

2011

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Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment

Materials, 2010-11, Vol.3 (11)

2010

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Informationen zur Berufsausbildung: Bericht über die Berufsbildung im technischen Mittelbau

Praktische Metallographie, 1974-06, Vol.11 (6), p.349-352

Wachau, Charlotte

1974

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Herrn Professor Petzow zum 60. Geburtstag Charlotte Wachau

Praktische Metallographie, 1986-06, Vol.23 (6), p.303-304

1986

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A comparative study of the annealing behavior of Cu(In,Ga)(S,Se) 2 based solar cells with an indium sulfide buffer layer, partly submitted to wet chemical treatments

Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment

Surface potentials of magnetron sputtered transparent conducting oxides

A comparative study of the annealing behavior of Cu(In,Ga)(S,Se){sub 2} based solar cells with an indium sulfide buffer layer, partly submitted to wet chemical treatments

Surface potentials of magnetron sputtered transparent conducting oxides

Atomic Layer Deposition of Al2O3 onto Sn-Doped In2O3: Absence of Self-Limited Adsorption during Initial Growth by Oxygen Diffusion from the Substrate and Band Offset Modification by Fermi Level Pinning in Al2O3

In situ Hall effect and conductivity measurements of ITO thin films

Orientation dependent ionization potential of In2O3: a natural source for inhomogeneous barrier formation at electrode interfaces in organic electronics

Sputtered Zn(O,S) buffer layers for CIGS solar modules—from lab to pilot production

Chemical and electronic properties of the ITO/Al2O3 interface

Barrier heights, polarization switching, and electrical fatigue in Pb ( Zr , Ti ) O 3 ceramics with different electrodes

Barrier heights, polarization switching, and electrical fatigue in Pb(Zr,Ti)O3 ceramics with different electrodes

Energy level alignment and electrical properties of (Ba,Sr)TiO3/Al2O3 interfaces for tunable capacitors

Self-limited oxygen exchange kinetics at SnO2 surfaces

Atomic Layer Deposition of Al 2 O 3 onto Sn-Doped In 2 O 3 : Absence of Self-Limited Adsorption during Initial Growth by Oxygen Diffusion from the Substrate and Band Offset Modification by Fermi Level Pinning in Al 2 O 3

Chemical and electronic properties of the ITO/Al(2)O(3) interface

Self-limited oxygen exchange kinetics at SnO2 surfaces: Scattering Methods applied to Soft Matter

Chemical and electronic properties of the ITO/Al2O3 interface: Physical chemistry of solids - the science behind materials engineering

Energy level alignment and electrical properties of ( Ba , Sr ) TiO 3 / Al 2 O 3 interfaces for tunable capacitors

Orientation dependent ionization potential of In sub(2)O sub(3): a natural source for inhomogeneous barrier formation at electrode interfaces in organic electronics

Orientation dependent ionization potential of In 2 O 3 : a natural source for inhomogeneous barrier formation at electrode interfaces in organic electronics

Orientation dependent ionization potential of In2O3: a natural source for inhomogeneous barrier formation at electrode interfaces in organic electronics : SEMICONDUCTING OXIDES

Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment

Informationen zur Berufsausbildung: Bericht über die Berufsbildung im technischen Mittelbau

Herrn Professor Petzow zum 60. Geburtstag Charlotte Wachau

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