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Accuracy assessment of elastic strain measurement by EBSD

Journal of microscopy (Oxford), 2009-02, Vol.233 (2), p.290-301

2009

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X-ray metrology for advanced microelectronics

European physical journal. Applied physics, 2010-02, Vol.49 (2), p.20101

Wyon, C.

2010

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Future technology for advanced MOS devices

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002, Vol.186 (1), p.380-391

Wyon, C

2002

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Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices

Journal of crystal growth, 2000-02, Vol.209 (4), p.1004-1008

2000

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Static time-of-flight secondary ion mass spectrometry analysis of microelectronics related substrates using a polyatomic ion source

Applied surface science, 2008-12, Vol.255 (4), p.1440-1442

2008

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Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development

Microelectronics and reliability, 2006-09, Vol.46 (9), p.1530-1535

2006

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Quantitative static Time-of-Flight Secondary Ion Mass Spectrometry analysis of anionic minority species in microelectronic substrates

Applied surface science, 2008-12, Vol.255 (4), p.1415-1418

2008

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X-ray metrology for advanced silicon processes

Applied surface science, 2006-10, Vol.253 (1), p.21-27

2006

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SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150eV

Applied surface science, 2006-07, Vol.252 (19), p.7211-7213

2006

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Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices

Applied surface science, 2000-09, Vol.164 (1), p.29-34

2000

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Fragmentation of molecular compounds on silicon wafers and low dielectric constant materials studied by time-of-flight secondary ion mass spectrometry using a polyatomic ion source

Surface and interface analysis, 2008-03, Vol.40 (3-4), p.734-737

2008

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In-line monitoring of advanced microelectronic processes using combined X-ray techniques

Thin solid films, 2004-02, Vol.450 (1), p.84-89

2004

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High slope efficiency and low threshold in a diode-pumped epitaxially grown Yb:YAG waveguide laser

Optics communications, 1995-04, Vol.115 (5), p.491-497

1995

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Ultrathin SiO2 layers formation by ultraslow single- and multicharged ions

Solid-state electronics, 2002-11, Vol.46 (11), p.1855-1862

2002

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Devices, Materials, and Processes for Nanoelectronics: Characterization with Advanced X-Ray Techniques Using Lab-Based and Synchrotron Radiation Sources

Advanced engineering materials, 2011-08, Vol.13 (8), p.811-836

2011

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Room-temperature diode-pumped continuous-wave SrY4(SiO4)3O: Yb3+, Er3+ crystal laser at 1554 nm

Applied physics letters, 1994-03, Vol.64 (10), p.1189-1191

1994

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Physical characterization of mixed HfAlOx layers by complementary analysis techniques

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-06, Vol.109 (1-3), p.60-63

2004

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Room temperature fluorescence of CsCdBr3:Re (Re=Pr, Nd, Dy, Ho, Er, Tm) in the 3–5-μm range

Journal of alloys and compounds, 1998-07, Vol.275-277, p.311-314

1998

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Ultra-thin oxides on silicon fabricated using ultra-slow multicharged ion beams

Microelectronics and reliability, 2001-07, Vol.41 (7), p.1063-1066

2001

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SIMS depth profiling of boron ultra shallow junctions using oblique O 2 + beams down to 150 eV

Applied surface science, 2006-07, Vol.252 (19), p.7211-7213

2006

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Optical properties and laser performance of neodymium doped scheelites CaWO4 and NaGd(WO4)2

Applied physics. B, Lasers and optics, 1996-12, Vol.63 (6), p.593-598

1996

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Dependence of ultra-thin SiO2 layers formation by ultra-slow single and multicharged ions on process conditions

Microelectronic engineering, 2001-11, Vol.59 (1-4), p.311-315

2001

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LaMgAl11O19:Nd microchip laser

Applied physics letters, 1991-12, Vol.59 (27), p.3519-3520

1991

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Optical properties and laser performance of neodymium doped fluoroapatites SrxCa5-x(PO4)3F (x = 0, 1, 2, 3, 4, and 5)

Optical materials, 1996-11, Vol.6 (4), p.293-303

1996

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Imaging of stored charges in Si quantum dots by tapping and electrostatic force microscopy

Europhysics letters, 2002-08, Vol.59 (4), p.566-571

2002

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Accuracy assessment of elastic strain measurement by EBSD

X-ray metrology for advanced microelectronics

Future technology for advanced MOS devices

Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices

Static time-of-flight secondary ion mass spectrometry analysis of microelectronics related substrates using a polyatomic ion source

Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development

Quantitative static Time-of-Flight Secondary Ion Mass Spectrometry analysis of anionic minority species in microelectronic substrates

X-ray metrology for advanced silicon processes

SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150eV

Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices

Fragmentation of molecular compounds on silicon wafers and low dielectric constant materials studied by time-of-flight secondary ion mass spectrometry using a polyatomic ion source

In-line monitoring of advanced microelectronic processes using combined X-ray techniques

High slope efficiency and low threshold in a diode-pumped epitaxially grown Yb:YAG waveguide laser

Ultrathin SiO2 layers formation by ultraslow single- and multicharged ions

Devices, Materials, and Processes for Nanoelectronics: Characterization with Advanced X-Ray Techniques Using Lab-Based and Synchrotron Radiation Sources

Room-temperature diode-pumped continuous-wave SrY4(SiO4)3O: Yb3+, Er3+ crystal laser at 1554 nm

Physical characterization of mixed HfAlOx layers by complementary analysis techniques

Room temperature fluorescence of CsCdBr3:Re (Re=Pr, Nd, Dy, Ho, Er, Tm) in the 3–5-μm range

Ultra-thin oxides on silicon fabricated using ultra-slow multicharged ion beams

SIMS depth profiling of boron ultra shallow junctions using oblique O 2 + beams down to 150 eV

Optical properties and laser performance of neodymium doped scheelites CaWO4 and NaGd(WO4)2

Dependence of ultra-thin SiO2 layers formation by ultra-slow single and multicharged ions on process conditions

LaMgAl11O19:Nd microchip laser

Optical properties and laser performance of neodymium doped fluoroapatites SrxCa5-x(PO4)3F (x = 0, 1, 2, 3, 4, and 5)

Imaging of stored charges in Si quantum dots by tapping and electrostatic force microscopy

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