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Growth and electrical properties of silicon oxide grown by atomic layer deposition using Bis(ethyl-methyl-amino)silane and ozone

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2012-01, Vol.30 (1), p.01A126-01A126-7

2012

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Capacitance and Interface Analysis of Transparent Analog Capacitor Using Indium Tin Oxide Electrodes and High-k Dielectrics

Journal of the Electrochemical Society, 2010, Vol.157 (7), p.G170

2010

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High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical

IEEE electron device letters, 2010-08, Vol.31 (8), p.857-859

2010

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Effect of Catalyst Layer Density and Growth Temperature in Rapid Atomic Layer Deposition of Silica Using Tris(tert-pentoxy)silanol

ACS applied materials & interfaces, 2011-05, Vol.3 (5), p.1633-1639

2011

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The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films

Chemistry of materials, 2009-10, Vol.21 (19), p.4374-4379

2009

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Improving the Morphological and Optical Properties of Sputtered Indium Tin Oxide Thin Films by Adopting Ultralow-Pressure Sputtering

Journal of the Electrochemical Society, 2009, Vol.156 (1), p.J6

2009

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Zirconium-assisted reaction in low temperature atomic layer deposition using Bis(ethyl-methyl-amino)silane and water

Applied surface science, 2011-09, Vol.257 (23), p.10311-10313

2011

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Atomic Layer Deposition of Ruthenium Nanoparticles Using a Low-Density Dielectric Film as Template Structure

Chemistry of materials, 2009-09, Vol.21 (17), p.4006-4011

2009

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Improvement in the performance of ZnO thin film transistors by using ultralow-pressure sputtering

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-05, Vol.29 (3)

2011

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Turn-Around Effect of Vth Shift During the Positive Bias Temperature Instability of the n-Type Transistor With HfOxNy Gate Dielectrics

IEEE electron device letters, 2010-12, Vol.31 (12), p.1479-1481

2010

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Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma

ECS solid state letters, 2013-01, Vol.2 (12), p.P114-P116

2013

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Turn-Around Effect of V Shift During the Positive Bias Temperature Instability of the n-Type Transistor With \hbox\hbox Gate Dielectrics

IEEE electron device letters, 2010-12, Vol.31 (12), p.1479-1481

2010

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Improvement in the Device Characteristics of Tin Oxide Thin-film Transistors by Adopting Ultralow-Pressure Sputtering

ECS transactions, 2010, Vol.25 (40), p.119-126

2010

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Clinical implications of fatty pancreas： Correlations between fatty pancreas and metabolic syndrome

World journal of gastroenterology : WJG, 2009-04, Vol.15 (15), p.1869-1875

2009

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Effects of Oxygen Source on Film Properties of Atomic-Layer-Deposited La-Silicate Film Using La[N(SiMe3)2]3

ECS solid state letters, 2012, Vol.1 (1), p.N4-N6

2012

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Interface Analysis of Transparent Analog Capacitor Using ITO Electrodes and ALD High-k Dielectrics

ECS transactions, 2009, Vol.25 (4), p.367-376

2009

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Rugged Metal Electrode (RME) for High Density Memory Devices

Japanese Journal of Applied Physics, 2001-08, Vol.40 (8A), p.L826

2001

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ELECTRICAL PROPERTIES OF CRYSTALLINE Ta2O5 WITH Ru ELECTRODE

Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 4B, pp. 2094-2097. 2000, 2000, Vol.39 (4B), p.2094-2097

2000

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Mass Production Worthy MIM Capacitor On Gate polysilicon(MIM-COG) Structure using HfO2/HfOxCyNz/HfO2 Dielectric for Analog/RF/Mixed Signal Application

2007 IEEE International Electron Devices Meeting, 2007, p.993-996

2007

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The Role of the Methyl and Hydroxyl Groups of Low-k Dielectric Films on the Nucleation of Ruthenium by ALD

Electrochemical and solid-state letters, 2008, Vol.11 (8), p.H210

2008

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Investigation on spatially separated atomic layer deposition by gas flow simulation and depositing Al2O3 films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2012-09, Vol.30 (5)

2012

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Plasma-Enhanced Atomic Layer Deposition of TiO[sub 2] and Al-Doped TiO[sub 2] Films Using N[sub 2]O and O[sub 2] Reactants

Journal of the Electrochemical Society, 2009, Vol.156 (9), p.G138

2009

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The Formation of an Almost Full Atomic Monolayer via Surface Modification by N 2 O-Plasma in Atomic Layer Deposition of ZrO 2 Thin Films

Chemistry of materials, 2009-10, Vol.21 (19), p.4374-4379

2009

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Turn-Around Effect of V rm th Shift During the Positive Bias Temperature Instability of the n-Type Transistor With hbox HfO x hbox N y Gate Dielectrics

IEEE electron device letters, 2010-12, Vol.31 (12), p.1479-1481

2010

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Turn-Around Effect of [Formula Omitted] Shift During the Positive Bias Temperature Instability of the n-Type Transistor With [Formula Omitted] Gate Dielectrics

IEEE electron device letters, 2010-12, Vol.31 (12), p.1479

2010

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Growth and electrical properties of silicon oxide grown by atomic layer deposition using Bis(ethyl-methyl-amino)silane and ozone

Capacitance and Interface Analysis of Transparent Analog Capacitor Using Indium Tin Oxide Electrodes and High-k Dielectrics

High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical

Effect of Catalyst Layer Density and Growth Temperature in Rapid Atomic Layer Deposition of Silica Using Tris(tert-pentoxy)silanol

The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films

Improving the Morphological and Optical Properties of Sputtered Indium Tin Oxide Thin Films by Adopting Ultralow-Pressure Sputtering

Zirconium-assisted reaction in low temperature atomic layer deposition using Bis(ethyl-methyl-amino)silane and water

Atomic Layer Deposition of Ruthenium Nanoparticles Using a Low-Density Dielectric Film as Template Structure

Improvement in the performance of ZnO thin film transistors by using ultralow-pressure sputtering

Turn-Around Effect of Vth Shift During the Positive Bias Temperature Instability of the n-Type Transistor With HfOxNy Gate Dielectrics

Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma

Turn-Around Effect of V Shift During the Positive Bias Temperature Instability of the n-Type Transistor With \hbox\hbox Gate Dielectrics

Improvement in the Device Characteristics of Tin Oxide Thin-film Transistors by Adopting Ultralow-Pressure Sputtering

Clinical implications of fatty pancreas： Correlations between fatty pancreas and metabolic syndrome

Effects of Oxygen Source on Film Properties of Atomic-Layer-Deposited La-Silicate Film Using La[N(SiMe3)2]3

Interface Analysis of Transparent Analog Capacitor Using ITO Electrodes and ALD High-k Dielectrics

Rugged Metal Electrode (RME) for High Density Memory Devices

ELECTRICAL PROPERTIES OF CRYSTALLINE Ta2O5 WITH Ru ELECTRODE

Mass Production Worthy MIM Capacitor On Gate polysilicon(MIM-COG) Structure using HfO2/HfOxCyNz/HfO2 Dielectric for Analog/RF/Mixed Signal Application

The Role of the Methyl and Hydroxyl Groups of Low-k Dielectric Films on the Nucleation of Ruthenium by ALD

Investigation on spatially separated atomic layer deposition by gas flow simulation and depositing Al2O3 films

Plasma-Enhanced Atomic Layer Deposition of TiO[sub 2] and Al-Doped TiO[sub 2] Films Using N[sub 2]O and O[sub 2] Reactants

The Formation of an Almost Full Atomic Monolayer via Surface Modification by N 2 O-Plasma in Atomic Layer Deposition of ZrO 2 Thin Films

Turn-Around Effect of V rm th Shift During the Positive Bias Temperature Instability of the n-Type Transistor With hbox HfO x hbox N y Gate Dielectrics

Turn-Around Effect of [Formula Omitted] Shift During the Positive Bias Temperature Instability of the n-Type Transistor With [Formula Omitted] Gate Dielectrics

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