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Low-cost and nanoscale non-volatile memory concept for future silicon chips

Nature materials, 2005-04, Vol.4 (4), p.347-352

2005

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On the difference between optically and electrically determined resistivity of ultra-thin titanium nitride films

Applied surface science, 2013-03, Vol.269, p.45-49

2013

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Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD

Surface & coatings technology, 2007-09, Vol.201 (22-23), p.8976-8980

2007

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Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range

IEEE electron device letters, 2008-04, Vol.29 (4), p.378-381

2008

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Low-temperature LPCVD of Si nanocrystals from disilane and trisilane (Silcore®) embedded in ALD-alumina for non-volatile memory devices

Surface & coatings technology, 2007-09, Vol.201 (22), p.9209-9214

2007

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Strain characterization of FinFETs using Raman spectroscopy

Thin solid films, 2013-08, Vol.541, p.57-61

2013

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Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrode

Microelectronic engineering, 2014-05, Vol.119, p.16-19

2014

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The development of titanium silicide–boron-doped polysilicon resistive temperature sensors

Journal of micromechanics and microengineering, 2011-10, Vol.21 (10), p.105022-14

2011

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Transition metal silicides in silicon technology

Reports on progress in physics, 1993-11, Vol.56 (11), p.1397-1467

1993

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Ultra-Thin Atomic Layer Deposited TiN Films: Non-Linear I–V Behaviour and the Importance of Surface Passivation

Journal of nanoscience and nanotechnology, 2011-09, Vol.11 (9), p.8120-8125

2011

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A Difference in Using Atomic Layer Deposition or Physical Vapour Deposition TiN as Electrode Material in Metal-Insulator-Metal and Metal-Insulator-Silicon Capacitors

Journal of nanoscience and nanotechnology, 2011-09, Vol.11 (9), p.8368-8373

2011

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Net negative charge in low-temperature SiO2 gate dielectric layers

Microelectronic engineering, 2009-07, Vol.86 (7-9), p.1707-1710

2009

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Growth Kinetics and Oxidation Mechanism of ALD TiN Thin Films Monitored by In Situ Spectroscopic Ellipsometry

Journal of the Electrochemical Society, 2011, Vol.158 (3), p.H214

2011

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Correlation between stress voiding of Al(Si)(Cu) metallizations and crystal orientation of aluminum grains

Journal of applied physics, 1993-11, Vol.74 (9), p.5391-5394

1993

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Specific Contact Resistance of Phase Change Materials to Metal Electrodes

IEEE electron device letters, 2010-11, Vol.31 (11), p.1293-1295

2010

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Atomic Layer Deposition of W[sub 1.5]N Barrier Films for Cu Metallization

Journal of the Electrochemical Society, 2005, Vol.152 (7), p.G522

2005

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Measurement of reaction heats using a polysilicon-based microcalorimetric sensor

Sensors and actuators. A. Physical., 2011-10, Vol.169 (2), p.308-316

2011

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An Area-Correction Model for Accurate Extraction of Low Specific Contact Resistance

IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.426-432

2012

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Wafer temperature measurement in PVD systems using the Co–Si reaction

Microelectronic engineering, 2000, Vol.50 (1), p.495-499

2000

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Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrode: Micro/Nano Devices and Systems 2013: An open thematic journal issue

Microelectronic engineering, 2014, Vol.119, p.16-19

2014

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Novel Test Structures for Dedicated Temperature Budget Determination

IEEE transactions on semiconductor manufacturing, 2012-08, Vol.25 (3), p.339-345

2012

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Growth of Sub-Nanometer Thin Continuous TiN Films by Atomic Layer Deposition

ECS journal of solid state science and technology, 2012, Vol.1 (6), p.P285-P290

2012

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Electrical Characterization of Thin-Film Structures With Redeposited Sidewalls

IEEE transactions on electron devices, 2011-04, Vol.58 (4), p.924-930

2011

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Characterization of titanium nitride layers by grazing-emission X-ray fluorescence spectrometry

Applied surface science, 1998-02, Vol.125 (2), p.129-136

1998

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Ti/TiN/Ti(N) PVD liners for W-plug applications

Microelectronic engineering, 2000, Vol.50 (1), p.271-276

2000

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Low-cost and nanoscale non-volatile memory concept for future silicon chips

On the difference between optically and electrically determined resistivity of ultra-thin titanium nitride films

Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD

Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range

Low-temperature LPCVD of Si nanocrystals from disilane and trisilane (Silcore®) embedded in ALD-alumina for non-volatile memory devices

Strain characterization of FinFETs using Raman spectroscopy

Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrode

The development of titanium silicide–boron-doped polysilicon resistive temperature sensors

Transition metal silicides in silicon technology

Ultra-Thin Atomic Layer Deposited TiN Films: Non-Linear I–V Behaviour and the Importance of Surface Passivation

A Difference in Using Atomic Layer Deposition or Physical Vapour Deposition TiN as Electrode Material in Metal-Insulator-Metal and Metal-Insulator-Silicon Capacitors

Net negative charge in low-temperature SiO2 gate dielectric layers

Growth Kinetics and Oxidation Mechanism of ALD TiN Thin Films Monitored by In Situ Spectroscopic Ellipsometry

Correlation between stress voiding of Al(Si)(Cu) metallizations and crystal orientation of aluminum grains

Specific Contact Resistance of Phase Change Materials to Metal Electrodes

Atomic Layer Deposition of W[sub 1.5]N Barrier Films for Cu Metallization

Measurement of reaction heats using a polysilicon-based microcalorimetric sensor

An Area-Correction Model for Accurate Extraction of Low Specific Contact Resistance

Wafer temperature measurement in PVD systems using the Co–Si reaction

Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrode: Micro/Nano Devices and Systems 2013: An open thematic journal issue

Novel Test Structures for Dedicated Temperature Budget Determination

Growth of Sub-Nanometer Thin Continuous TiN Films by Atomic Layer Deposition

Electrical Characterization of Thin-Film Structures With Redeposited Sidewalls

Characterization of titanium nitride layers by grazing-emission X-ray fluorescence spectrometry

Ti/TiN/Ti(N) PVD liners for W-plug applications

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