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Impact of TiN Barrier Layer on Contact Resistance of Tungsten Filled Vias

IEEE transactions on semiconductor manufacturing, 2018-11, Vol.31 (4), p.528-534

2018

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Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

Journal of applied physics, 2009-06, Vol.105 (11)

2009

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High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics

Thin solid films, 2010-05, Vol.518 (15), p.4380-4384

2010

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Processing and integration of graphene in a 200 mm wafer Si technology environment

Microelectronic engineering, 2019-01, Vol.205, p.44-52

2019

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Modular integration of annular TSV structures filled with tungsten in a 0.25μm SiGe:C BiCMOS technology

Microelectronic engineering, 2015-04, Vol.137, p.153-157

2015

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Sensing glucose concentrations at GHz frequencies with a fully embedded Biomicro-electromechanical system (BioMEMS)

Journal of applied physics, 2013-06, Vol.113 (24), p.244904-244904

2013

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Corrosion-resistant metal layers from a CMOS process for bioelectronic applications

Surface & coatings technology, 2010-03, Vol.204 (12), p.2055-2059

2010

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Crosstalk suppression of CMOS compatible AlN based SAW devices on low resistive Si(100)

Physica status solidi. C, 2014-02, Vol.11 (2), p.249-252

2014

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Impact of Ti Sputter Target Denitridation on the Crystallographic Orientation of Single Ti Layers and Ti/TiN/AlCu Layer Stacks on Different Oxides

Journal of electronic materials, 2009-06, Vol.38 (6), p.797-801

2009

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Evaluating student performance in vocational education

Wolansky, William D

1985

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Fabrication of MEMS actuators from the BEOL of a 0.25μm BiCMOS technology platform

Microelectronic engineering, 2012-09, Vol.97, p.276-279

2012

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A 0.13 \mu} SiGe BiCMOS Technology Featuring f /f of 240/330 GHz and Gate Delays Below 3 ps

IEEE journal of solid-state circuits, 2010-09, Vol.45 (9), p.1678-1686

2010

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Gigahertz monolithic delay lines for surface acoustic waves on Silicon

IOP conference series. Materials Science and Engineering, 2012-01, Vol.41 (1), p.12009-6

2012

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(Invited) Nickel and Nickel-Platinum Silicide for BiCMOS Devices

ECS transactions, 2020-09, Vol.98 (5), p.351-361

2020

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Ultrathin TiN Membranes as a Technology Platform for CMOS-Integrated MEMS and BioMEMS Devices

Advanced functional materials, 2011-05, Vol.21 (9), p.1652-1656

2011

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On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1), p.1

2011

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Effects of various Co/TiN and Co/Ti layer stacks and the salicide rapid thermal process conditions on cobalt silicide formation

Microelectronic engineering, 2004-10, Vol.76 (1-4), p.311-317

2004

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Development of spectroscopic ellipsometry as in-line control for Co SALICIDE process

Thin solid films, 2004-03, Vol.450 (2), p.248-254

2004

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SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay

2010 International Electron Devices Meeting, 2010, p.30.5.1-30.5.4

2010

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Circuit applications of high-performance SiGe:C HBTs integrated in BiCMOS technology

Applied surface science, 2004-03, Vol.224 (1), p.297-305

2004

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Coaxial Filters Optimization Using Tuning Space Mapping in CST Studio

Radioengineering, 2011-04, Vol.20 (1), p.289-294

2011

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Impact of Temperature on the Resistive Switching Behavior of Embedded \hbox-Based RRAM Devices

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.3124-3131

2011

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Filtering antennas: Comparison of different concepts

2014 IEEE-APS Topical Conference on Antennas and Propagation in Wireless Communications (APWC), 2014, p.438-441

2014

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High performance metal-insulator-metal capacitors with atomic vapor deposited Hf02 dielectrics

Thin solid films, 2010, Vol.518 (15), p.4380-4384

2010

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High performance metal–insulator–metal capacitors with atomic vapor deposited HfO 2 dielectrics

Thin solid films, 2010, Vol.518 (15), p.4380-4384

2010

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Impact of TiN Barrier Layer on Contact Resistance of Tungsten Filled Vias

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics

Processing and integration of graphene in a 200 mm wafer Si technology environment

Modular integration of annular TSV structures filled with tungsten in a 0.25μm SiGe:C BiCMOS technology

Sensing glucose concentrations at GHz frequencies with a fully embedded Biomicro-electromechanical system (BioMEMS)

Corrosion-resistant metal layers from a CMOS process for bioelectronic applications

Crosstalk suppression of CMOS compatible AlN based SAW devices on low resistive Si(100)

Impact of Ti Sputter Target Denitridation on the Crystallographic Orientation of Single Ti Layers and Ti/TiN/AlCu Layer Stacks on Different Oxides

Evaluating student performance in vocational education

Fabrication of MEMS actuators from the BEOL of a 0.25μm BiCMOS technology platform

A 0.13 \mu} SiGe BiCMOS Technology Featuring f /f of 240/330 GHz and Gate Delays Below 3 ps

Gigahertz monolithic delay lines for surface acoustic waves on Silicon

(Invited) Nickel and Nickel-Platinum Silicide for BiCMOS Devices

Ultrathin TiN Membranes as a Technology Platform for CMOS-Integrated MEMS and BioMEMS Devices

On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration

Effects of various Co/TiN and Co/Ti layer stacks and the salicide rapid thermal process conditions on cobalt silicide formation

Development of spectroscopic ellipsometry as in-line control for Co SALICIDE process

SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay

Circuit applications of high-performance SiGe:C HBTs integrated in BiCMOS technology

Coaxial Filters Optimization Using Tuning Space Mapping in CST Studio

Impact of Temperature on the Resistive Switching Behavior of Embedded \hbox-Based RRAM Devices

Filtering antennas: Comparison of different concepts

High performance metal-insulator-metal capacitors with atomic vapor deposited Hf02 dielectrics

High performance metal–insulator–metal capacitors with atomic vapor deposited HfO 2 dielectrics

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