UB Paderborn / Katalog / Suche / in CDI

Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping technique

IEEE transactions on electron devices, 2006-01, Vol.53 (1), p.103-108

2006

Volltextzugriff (PDF)

Charge-based capacitance measurement for bias-dependent capacitance

IEEE electron device letters, 2006-05, Vol.27 (5), p.390-392

2006

Volltextzugriff (PDF)

A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications

IEEE transactions on electron devices, 2005-04, Vol.52 (4), p.541-546

2005

Volltextzugriff (PDF)

A novel simple CBCM method free from charge injection-induced errors

IEEE electron device letters, 2004-05, Vol.25 (5), p.262-264

2004

Volltextzugriff (PDF)

electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O

Applied physics letters, 1990-09, Vol.57 (10), p.1010-1011

1990

Volltextzugriff (PDF)

Temperature effect on read current in a two-bit nitride-based trapping Storage Flash EEPROM cell

IEEE electron device letters, 2004-07, Vol.25 (7), p.495-497

2004

Volltextzugriff (PDF)

Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology

IEEE electron device letters, 2004-09, Vol.25 (9), p.649-651

2004

Volltextzugriff (PDF)

Interconnect capacitance characterization using charge-injection-induced error-free (CIEF) charge-based capacitance measurement (CBCM)

IEEE transactions on semiconductor manufacturing, 2006-02, Vol.19 (1), p.50-56

2006

Volltextzugriff (PDF)

A novel erase scheme to suppress overerasure in a scaled 2-bit nitride storage flash memory cell

IEEE electron device letters, 2004-09, Vol.25 (9), p.643-645

2004

Volltextzugriff (PDF)

A novel fully CMOS process compatible PREM for SOC applications

IEEE electron device letters, 2005-03, Vol.26 (3), p.203-204

2005

Volltextzugriff (PDF)

Improved reliability characteristics of submicrometer nMOSFET's with oxynitride gate dielectric prepared by rapid thermal oxidation in N2O

IEEE electron device letters, 1991-09, Vol.12 (9), p.495-497

1991

Volltextzugriff (PDF)

Insight of stress effect on the ONO stack layer in a sONOS-type flash memory cell

2006 IEEE International Reliability Physics Symposium Proceedings, 2006, p.691-692

2006

Volltextzugriff (PDF)

A novel NAND-type PHINES nitride trapping storage flash memory cell with physically 2-bits-per-cell storage, and a high programming throughput for mass storage applications

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005, 2005, p.116-117

2005

Volltextzugriff (PDF)

A physical model for boron penetration through an oxynitride gate dielectric prepared by rapid thermal processing in N2O

Applied physics letters, 1991-09, Vol.59 (13), p.1581-1582

1991

Volltextzugriff (PDF)

Charge-based cCapacitance measurement for bias-dependent capacitance

IEEE electron device letters, 2006, Vol.27 (5), p.390-392

2006

Volltextzugriff (PDF)

A 4b/cell NROM 1Gb Data-Storage Memory

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers, 2006, p.448-458

2006

Volltextzugriff (PDF)

Ultrathin gate dielectrics for ULSI MOS applications

Ting, Wenchi

1991

Volltextzugriff (PDF)

Improved reliability characteristics of submicrometer nMOSFET's with oxynitride gate dielectric prepared by rapid thermal oxidation in N sub(2)O

IEEE electron device letters, 1991-01, Vol.12 (9), p.495-497

1991

Volltextzugriff (PDF)

Effects of dynamic stressing on nitrided and reoxidized-nitrided chemical-vapor-deposited gate oxides

IEEE electron device letters, 1989-12, Vol.10 (12), p.568-570

1989

Volltextzugriff (PDF)

A novel silicon-nitride based light-emitting transistor (SiNLET): optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest, 2005, p.1013-1016

2005

Volltextzugriff (PDF)

Electrical and Reliability Characteristics of Submicron Nmosfet's with Oxynitride Gate Dielectric Prepared by Rapid Thermal Oxidation in N/sub 2/O

[1991] 49th Annual Device Research Conference Digest, 1991, p.IVB_6-0_61

1991

Volltextzugriff (PDF)

Reliability and device scaling challenges of trapping charge flash memories

Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743), 2004, p.247-250

2004

Volltextzugriff (PDF)

Novel operation schemes to improve device reliability in a localized trapping storage SONOS-type flash memory

IEEE International Electron Devices Meeting 2003, 2003, p.7.5.1-7.5.4

2003

Volltextzugriff (PDF)

Differential innate immune responses to fowl adenovirus serotype 4 infection in Leghorn male hepatocellular and chicken embryo fibroblast cells

Poultry science, 2024-06, Vol.103 (6), p.103741-103741, Article 103741

2024

Volltextzugriff (PDF)

Fowl adenovirus serotype 4 enters leghorn male hepatocellular cells via the clathrin-mediated endocytosis pathway

Veterinary research (Paris), 2023-03, Vol.54 (1), p.24-24, Article 24

2023

Volltextzugriff (PDF)

Menü

Weitere Dienste

Einstellungen

Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping technique

Charge-based capacitance measurement for bias-dependent capacitance

A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications

A novel simple CBCM method free from charge injection-induced errors

electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O

Temperature effect on read current in a two-bit nitride-based trapping Storage Flash EEPROM cell

Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology

Interconnect capacitance characterization using charge-injection-induced error-free (CIEF) charge-based capacitance measurement (CBCM)

A novel erase scheme to suppress overerasure in a scaled 2-bit nitride storage flash memory cell

A novel fully CMOS process compatible PREM for SOC applications

Improved reliability characteristics of submicrometer nMOSFET's with oxynitride gate dielectric prepared by rapid thermal oxidation in N2O

Insight of stress effect on the ONO stack layer in a sONOS-type flash memory cell

A novel NAND-type PHINES nitride trapping storage flash memory cell with physically 2-bits-per-cell storage, and a high programming throughput for mass storage applications

A physical model for boron penetration through an oxynitride gate dielectric prepared by rapid thermal processing in N2O

Charge-based cCapacitance measurement for bias-dependent capacitance

A 4b/cell NROM 1Gb Data-Storage Memory

Ultrathin gate dielectrics for ULSI MOS applications

Improved reliability characteristics of submicrometer nMOSFET's with oxynitride gate dielectric prepared by rapid thermal oxidation in N sub(2)O

Effects of dynamic stressing on nitrided and reoxidized-nitrided chemical-vapor-deposited gate oxides

A novel silicon-nitride based light-emitting transistor (SiNLET): optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI

Electrical and Reliability Characteristics of Submicron Nmosfet's with Oxynitride Gate Dielectric Prepared by Rapid Thermal Oxidation in N/sub 2/O

Reliability and device scaling challenges of trapping charge flash memories

Novel operation schemes to improve device reliability in a localized trapping storage SONOS-type flash memory

Differential innate immune responses to fowl adenovirus serotype 4 infection in Leghorn male hepatocellular and chicken embryo fibroblast cells

Fowl adenovirus serotype 4 enters leghorn male hepatocellular cells via the clathrin-mediated endocytosis pathway

Suchergebnisse filtern