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The unreliability of sensory assessments

Clinical rehabilitation, 1991-11, Vol.5 (4), p.273-282

1991

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High-power, very low threshold, GaInP/AlGaInP visible diode lasers

Applied physics letters, 1991-06, Vol.58 (22), p.2464-2466

1991

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Characterization of InGaAs-GaAs strained-layer lasers with quantum wells near the critical thickness

Applied physics letters, 1989-11, Vol.55 (21), p.2167-2169

1989

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Long-lived InGaAs quantum well lasers

Applied physics letters, 1989-05, Vol.54 (19), p.1861-1862

1989

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Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers

IEEE photonics technology letters, 1990-08, Vol.2 (8), p.531-533

1990

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Diode laser degradation mechanisms: A review

Progress in quantum electronics, 1991, Vol.15 (3), p.153-174

Waters, R.G.

1991

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Excess spontaneous-emission factor in unstable-resonator lasers

Optics letters, 1992-09, Vol.17 (17), p.1207

1992

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Viable strained-layer laser at λ=1100 nm

Journal of applied physics, 1990-01, Vol.67 (2), p.1132-1134

1990

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Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasers

Applied physics letters, 1986-07, Vol.49 (1), p.16-18

1986

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Degradation phenomenology in (Al)GaAs quantum well lasers

Applied physics letters, 1988-01, Vol.52 (3), p.179-181

1988

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Carrier recombination rates in strained-layer InGaAs-GaAs quantum wells

IEEE journal of quantum electronics, 1991-06, Vol.27 (6), p.1451-1455

1991

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Government policies for the countryside

Land use policy, 1994, Vol.11 (2), p.88-93

Waters, G.R.

1994

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Degradation kinetics of GaAs quantum well lasers

Applied physics letters, 1989-06, Vol.54 (26), p.2683-2685

1989

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Integrated quantum-well manifold laser

Journal of applied physics, 1989-07, Vol.66 (2), p.961-963

1989

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Dark-line observations in failed quantum well lasers

Applied physics letters, 1988-04, Vol.52 (16), p.1347-1348

1988

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Carrier recombination rate in GaAs-AlGaAs single quantum well lasers under high levels of excitation

Applied physics letters, 1990-05, Vol.56 (21), p.2083-2085

1990

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Quantum well lasers in operation for four years

Applied physics letters, 1990-12, Vol.57 (25), p.2644-2645

1990

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Novel densely packed laser diode array

Electronics letters, 1991-11, Vol.27 (24), p.2233-2234

1991

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Single-quantum-well laser with 11.2 degree transverse beam divergence

Electronics letters, 1990-08, Vol.26 (17), p.1348-1350

1990

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Long-lived dry-etched AlGaAs/GaAs ridge waveguide laser diodes

Applied physics letters, 1990-05, Vol.56 (22), p.2175-2176

1990

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Reliability of InAlGaAs strained-quantum-well lasers operating at 0.81 mu m

IEEE photonics technology letters, 1992-08, Vol.4 (8), p.829-831

1992

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Energy storage in quantum-well lasers

Optics letters, 1990-10, Vol.15 (19), p.1073

1990

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Operating characteristics of single-quantum-well AlGaAs/GaAs high-power lasers

IEEE journal of quantum electronics, 1988-07, Vol.24 (7), p.1258-1265

1988

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High-power conversion efficiency quantum well diode lasers

Applied physics letters, 1987-10, Vol.51 (17), p.1318-1319

1987

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Efficiency enhancement in quantum well lasers via tailored doping profiles

Applied physics letters, 1988-06, Vol.52 (24), p.2017-2018

1988

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The unreliability of sensory assessments

High-power, very low threshold, GaInP/AlGaInP visible diode lasers

Characterization of InGaAs-GaAs strained-layer lasers with quantum wells near the critical thickness

Long-lived InGaAs quantum well lasers

Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers

Diode laser degradation mechanisms: A review

Excess spontaneous-emission factor in unstable-resonator lasers

Viable strained-layer laser at λ=1100 nm

Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasers

Degradation phenomenology in (Al)GaAs quantum well lasers

Carrier recombination rates in strained-layer InGaAs-GaAs quantum wells

Government policies for the countryside

Degradation kinetics of GaAs quantum well lasers

Integrated quantum-well manifold laser

Dark-line observations in failed quantum well lasers

Carrier recombination rate in GaAs-AlGaAs single quantum well lasers under high levels of excitation

Quantum well lasers in operation for four years

Novel densely packed laser diode array

Single-quantum-well laser with 11.2 degree transverse beam divergence

Long-lived dry-etched AlGaAs/GaAs ridge waveguide laser diodes

Reliability of InAlGaAs strained-quantum-well lasers operating at 0.81 mu m

Energy storage in quantum-well lasers

Operating characteristics of single-quantum-well AlGaAs/GaAs high-power lasers

High-power conversion efficiency quantum well diode lasers

Efficiency enhancement in quantum well lasers via tailored doping profiles

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