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Bismuth trichloride as a molecular precursor for silicon doping

Applied physics letters, 2023-04, Vol.122 (15)

2023

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Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy

ACS nano, 2020-03, Vol.14 (3), p.3316-3327

2020

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The structure and chemistry of the TiO2-rich surface of SrTiO3 (001)

Nature (London), 2002-09, Vol.419 (6902), p.55-58

2002

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Molecular adsorption and methanol synthesis on the oxidized Cu/ZnO(0001) surface

Surface science, 2015-11, Vol.641, p.97-104

2015

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Bottom-up assembly of metallic germanium

Scientific reports, 2015-08, Vol.5 (1), p.12948-12948, Article 12948

2015

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A single-atom transistor

Nature nanotechnology, 2012-02, Vol.7 (4), p.242-246

2012

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Dimer pinning and the assignment of semiconductor-adsorbate surface structures

The Journal of chemical physics, 2011-02, Vol.134 (6), p.064709-064709-9

2011

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TiO2-rich reconstructions of SrTiO3(001): a theoretical study of structural patterns

Surface science, 2004-12, Vol.573 (3), p.446-456

2004

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Defect Structures of Tin-Doped Indium Oxide

Journal of the American Ceramic Society, 2003-10, Vol.86 (10), p.1700-1706

2003

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Interstitial Oxygen in Tin-Doped Indium Oxide Transparent Conductors

Journal of the American Ceramic Society, 2006-02, Vol.89 (2), p.616-619

2006

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Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication

Advanced materials (Weinheim), 2024-06, Vol.36 (24), p.e2312282-n/a

2024

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Dissociation of CH 3 –O as a Driving Force for Methoxyacetophenone Adsorption on Si(001)

Journal of physical chemistry. C, 2019-09, Vol.123 (36), p.22239-22249

2019

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Dissociation of CH3–O as a Driving Force for Methoxyacetophenone Adsorption on Si(001)

Journal of physical chemistry. C, 2019-09, Vol.123 (36), p.22239-22249

2019

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Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface

Angewandte Chemie International Edition, 2023-02, Vol.62 (7), p.e202213982-n/a

International ed. in English, 2023

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Defect Cluster Aggregation and Nonreducibility in Tin-Doped Indium Oxide

Journal of the American Ceramic Society, 2003-10, Vol.86 (10), p.1707-1711

2003

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Adsorption and Thermal Decomposition of Triphenyl Bismuth on Silicon (001)

Journal of physical chemistry. C, 2023-08, Vol.127 (33), p.16433-16441

2023

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Reaction intermediates of methanol synthesis and the water–gas-shift reaction on the ZnO(0001) surface

Surface science, 2010-09, Vol.604 (19), p.1742-1751

2010

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Determination of the preferred reaction pathway of acetophenone on Si(001) using photoelectron diffraction

Journal of physics. Condensed matter, 2021-05, Vol.33 (21), p.214002

2021

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Manipulating the orientation of an organic adsorbate on silicon: a NEXAFS study of acetophenone on Si(0 0 1)

Journal of physics. Condensed matter, 2015-02, Vol.27 (5), p.054002-054002

2015

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Electronic structure models of phosphorus δ -doped silicon

Physical review. B, Condensed matter and materials physics, 2009-01, Vol.79 (3), Article 033204

2009

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Phosphorus δ-doped silicon: mixed-atom pseudopotentials and dopant disorder effects

Nanotechnology, 2011-02, Vol.22 (6), p.065701-065701

2011

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Multiscale Simulation Studies on the Electromechanical Properties of Carbon Nanotubes

Journal of the Korean Physical Society, 2008, 52(4), , pp.1281-1286

2008

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Adsorption and Dissociation of a Bicyclic Tertiary Diamine, Triethylenediamine, on a Si(100)‑2 × 1 Surface

Journal of physical chemistry. C, 2016-12, Vol.120 (50), p.28672-28681

2016

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Valley Splitting in a Silicon Quantum Device Platform

Nano letters, 2014-03, Vol.14 (3), p.1515-1519

2014

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Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface

Angewandte Chemie, 2023-02, Vol.135 (7), p.n/a

2023

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Bismuth trichloride as a molecular precursor for silicon doping

Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy

The structure and chemistry of the TiO2-rich surface of SrTiO3 (001)

Molecular adsorption and methanol synthesis on the oxidized Cu/ZnO(0001) surface

Bottom-up assembly of metallic germanium

A single-atom transistor

Dimer pinning and the assignment of semiconductor-adsorbate surface structures

TiO2-rich reconstructions of SrTiO3(001): a theoretical study of structural patterns

Defect Structures of Tin-Doped Indium Oxide

Interstitial Oxygen in Tin-Doped Indium Oxide Transparent Conductors

Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication

Dissociation of CH 3 –O as a Driving Force for Methoxyacetophenone Adsorption on Si(001)

Dissociation of CH3–O as a Driving Force for Methoxyacetophenone Adsorption on Si(001)

Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface

Defect Cluster Aggregation and Nonreducibility in Tin-Doped Indium Oxide

Adsorption and Thermal Decomposition of Triphenyl Bismuth on Silicon (001)

Reaction intermediates of methanol synthesis and the water–gas-shift reaction on the ZnO(0001) surface

Determination of the preferred reaction pathway of acetophenone on Si(001) using photoelectron diffraction

Manipulating the orientation of an organic adsorbate on silicon: a NEXAFS study of acetophenone on Si(0 0 1)

Electronic structure models of phosphorus δ -doped silicon

Phosphorus δ-doped silicon: mixed-atom pseudopotentials and dopant disorder effects

Multiscale Simulation Studies on the Electromechanical Properties of Carbon Nanotubes

Adsorption and Dissociation of a Bicyclic Tertiary Diamine, Triethylenediamine, on a Si(100)‑2 × 1 Surface

Valley Splitting in a Silicon Quantum Device Platform

Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface

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