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Superior characteristics of microscale light emitting diodes through tightly lateral oxide-confined scheme

Applied physics letters, 2017-01, Vol.110 (2)

2017

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CW lasing of current injection blue GaN-based vertical cavity surface emitting laser

Applied physics letters, 2008-04, Vol.92 (14), p.141102-141102-3

2008

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A Study on Perception of Visual–Tactile and Color–Texture Features of Footwear Leather for Symmetric Shoes

Symmetry (Basel), 2023-07, Vol.15 (7), p.1462

2023

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Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes

Applied physics letters, 2010-06, Vol.96 (23)

2010

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Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature

Applied physics letters, 2010-08, Vol.97 (7), p.071114-071114-3

2010

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Study of the Excitation Power Dependent Internal Quantum Efficiency in InGaN/GaN LEDs Grown on Patterned Sapphire Substrate

IEEE journal of selected topics in quantum electronics, 2009-07, Vol.15 (4), p.1137-1143

2009

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High-temperature operation of GaN-based vertical-cavity surface-emitting lasers

Applied physics express, 2017-11, Vol.10 (11), p.112101

2017

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Effects of doping concentration and annealing temperature on properties of highly-oriented Al-doped ZnO films

Journal of crystal growth, 2006-01, Vol.287 (1), p.78-84

2006

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Effects of Built-In Polarization and Carrier Overflow on InGaN Quantum-Well Lasers With Electronic Blocking Layers

Journal of lightwave technology, 2008-02, Vol.26 (3), p.329-337

2008

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High Light-Extraction GaN-Based Vertical LEDs With Double Diffuse Surfaces

IEEE journal of quantum electronics, 2006-12, Vol.42 (12), p.1196-1201

2006

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A systematic approach for green design in modular product development

International journal of advanced manufacturing technology, 2013-10, Vol.68 (9-12), p.2729-2741

2013

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Crossover from polariton lasing to exciton lasing in a strongly coupled ZnO microcavity

Scientific reports, 2016-02, Vol.6 (1), p.20581-20581, Article 20581

2016

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Characteristics Improvement of Surface-Emitting Distributed Feedback Lasers With ITO Claddings

IEEE journal of selected topics in quantum electronics, 2017-11, Vol.23 (6), p.1-6

2017

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GaN-based high contrast grating surface-emitting lasers

Applied physics letters, 2013-02, Vol.102 (8)

2013

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Study of GaN-Based Light-Emitting Diodes Grown on Chemical Wet-Etching-Patterned Sapphire Substrate With V-Shaped Pits Roughening Surfaces

Journal of lightwave technology, 2008-06, Vol.26 (11), p.1455-1463

2008

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Lasing Characteristics of GaN-Based Photonic Quasi-Crystal Surface Emitting Lasers Operated at Higher Order Γ Mode

IEEE journal of selected topics in quantum electronics, 2015-11, Vol.21 (6), p.743-748

2015

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Characterization of spatial manipulation on ZnO nanocomposites consisting of Au nanoparticles, a graphene layer, and ZnO nanorods

Applied physics. A, Materials science & processing, 2018, Vol.124 (1), p.1-6, Article 69

2018

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Light Emission Characteristics of Nonpolar a -Plane GaN-Based Photonic Crystal Defect Cavities

IEEE journal of quantum electronics, 2016-09, Vol.52 (9), p.1-7

2016

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Light-output enhancement in a nitride-based light-emitting diode with 22° undercut sidewalls

IEEE photonics technology letters, 2005-01, Vol.17 (1), p.19-21

2005

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Numerical Study on Optimization of Active Layer Structures for GaN/AlGaN Multiple-Quantum-Well Laser Diodes

Journal of lightwave technology, 2008-09, Vol.26 (17), p.3155-3165

2008

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Electrically Pumped III-N Microcavity Light Emitters Incorporating an Oxide Confinement Aperture

Nanoscale research letters, 2017-01, Vol.12 (1), p.15-15, Article 15

2017

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Further Enhancement of Nitride-Based Near-Ultraviolet Vertical-Injection Light-Emitting Diodes by Adopting a Roughened Mesh-Surface

IEEE photonics technology letters, 2008-05, Vol.20 (10), p.803-805

2008

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High quality factor nonpolar GaN photonic crystal nanocavities

Applied physics letters, 2013-05, Vol.102 (19)

2013

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High-Brightness InGaN-GaN Flip-Chip Light-Emitting Diodes With Triple-Light Scattering Layers

IEEE photonics technology letters, 2008-04, Vol.20 (8), p.659-661

2008

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Nitride-Based Thin-Film Light-Emitting Diodes With Photonic Quasi-Crystal Surface

IEEE photonics technology letters, 2009-03, Vol.21 (5), p.331-333

2009

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Superior characteristics of microscale light emitting diodes through tightly lateral oxide-confined scheme

CW lasing of current injection blue GaN-based vertical cavity surface emitting laser

A Study on Perception of Visual–Tactile and Color–Texture Features of Footwear Leather for Symmetric Shoes

Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes

Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature

Study of the Excitation Power Dependent Internal Quantum Efficiency in InGaN/GaN LEDs Grown on Patterned Sapphire Substrate

High-temperature operation of GaN-based vertical-cavity surface-emitting lasers

Effects of doping concentration and annealing temperature on properties of highly-oriented Al-doped ZnO films

Effects of Built-In Polarization and Carrier Overflow on InGaN Quantum-Well Lasers With Electronic Blocking Layers

High Light-Extraction GaN-Based Vertical LEDs With Double Diffuse Surfaces

A systematic approach for green design in modular product development

Crossover from polariton lasing to exciton lasing in a strongly coupled ZnO microcavity

Characteristics Improvement of Surface-Emitting Distributed Feedback Lasers With ITO Claddings

GaN-based high contrast grating surface-emitting lasers

Study of GaN-Based Light-Emitting Diodes Grown on Chemical Wet-Etching-Patterned Sapphire Substrate With V-Shaped Pits Roughening Surfaces

Lasing Characteristics of GaN-Based Photonic Quasi-Crystal Surface Emitting Lasers Operated at Higher Order Γ Mode

Characterization of spatial manipulation on ZnO nanocomposites consisting of Au nanoparticles, a graphene layer, and ZnO nanorods

Light Emission Characteristics of Nonpolar a -Plane GaN-Based Photonic Crystal Defect Cavities

Light-output enhancement in a nitride-based light-emitting diode with 22° undercut sidewalls

Numerical Study on Optimization of Active Layer Structures for GaN/AlGaN Multiple-Quantum-Well Laser Diodes

Electrically Pumped III-N Microcavity Light Emitters Incorporating an Oxide Confinement Aperture

Further Enhancement of Nitride-Based Near-Ultraviolet Vertical-Injection Light-Emitting Diodes by Adopting a Roughened Mesh-Surface

High quality factor nonpolar GaN photonic crystal nanocavities

High-Brightness InGaN-GaN Flip-Chip Light-Emitting Diodes With Triple-Light Scattering Layers

Nitride-Based Thin-Film Light-Emitting Diodes With Photonic Quasi-Crystal Surface

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