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Conformal bilayer h-AlN epitaxy on WS2 by ALD with ultralow leakage current

Applied physics letters, 2023-10, Vol.123 (16)

2023

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van der Waals epitaxy of 2D h-AlN on TMDs by atomic layer deposition at 250 °C

Applied physics letters, 2022-04, Vol.120 (16)

2022

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Neuro-Inspired-in-Memory Computing Using Charge-Trapping MemTransistor on Germanium as Synaptic Device

IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.1-5

2020

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Interface Characterization of HfO2/GaSb MOS Capacitors With Ultrathin Equivalent Oxide Thickness by Using Hydrogen Plasma Treatment

IEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3459-3465

2016

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Acute Effects of Wearing Different Surgical Face Masks during High-Intensity, Short-Rest Resistance Exercise on Cardiorespiratory and Pulmonary Function and Perceptual Responses in Weightlifters

Biology (Basel, Switzerland), 2022-06, Vol.11 (7), p.992

2022

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The Effect of Repetitive Drop Jumps among Different Heights on Bilateral Asymmetry of Countermovement Jumps

Symmetry (Basel), 2022-01, Vol.14 (2), p.190

2022

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A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures

Applied physics letters, 2010-02, Vol.96 (5)

2010

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Demonstration of HfO2-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si0.8Ge0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger

IEEE journal of the Electron Devices Society, 2023, Vol.11, p.274-281

2023

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Inhibition of the MEK/ERK pathway reduces microglial activation and interleukin-1-beta expression in spinal cord ischemia/reperfusion injury in rats

The Journal of thoracic and cardiovascular surgery, 2007-04, Vol.133 (4), p.934-941

2007

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BEOL-Compatible Ferroelectric Capacitor of 5 nm Ultrathin HZO With High Remanent Polarization and Excellent Endurance

IEEE transactions on nanotechnology, 2024, Vol.23, p.474-477

2024

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Learning effects of triple continuous jumping snatch intervention on the second pull of the snatch for novice lifters

International journal of sports science & coaching, 2023-10, Vol.18 (5), p.1577-1584

2023

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Suppressing Threshold Voltage Drift in Sub-2 nm In2O3 Transistors with Improved Thermal Stability

IEEE electron device letters, 2024-01, Vol.45 (1), p.1-1

2024

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In0.5Ga0.5As-Based Metal - Oxide - Semiconductor Capacitor on GaAs Substrate Using Metal - Organic Chemical Vapor Deposition

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.235-240

2013

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Aggressive Equivalent Oxide Thickness of ~0.7 nm on Si0.8Ge0.2 Through HfO2 Dielectric Direct Deposition

IEEE electron device letters, 2022-10, Vol.43 (10), p.1605-1608

2022

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Electrical Characteristics of Si0.8Ge0.2 p-MOSFET With TMA Pre-Doping and NH3 Plasma IL Treatment

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1776-1780

2022

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Effect of different resistance increments during warm-up on the snatch performance of male weightlifters

Heliyon, 2024-07, Vol.10 (14), p.e34827, Article e34827

2024

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High-Accuracy Deep Neural Networks Using a Contralateral-Gated Analog Synapse Composed of Ultrathin MoS₂ nFET and Nonvolatile Charge-Trap Memory

IEEE electron device letters, 2020-11, Vol.41 (11), p.1649-1652

2020

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A two-dimensional RAKE receiver architecture with an FFT-based matched filtering

IEEE transactions on vehicular technology, 2005-01, Vol.54 (1), p.224-234

2005

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Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2018-09, Vol.36 (5)

2018

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Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing

Applied physics letters, 2010-05, Vol.96 (22)

2010

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Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density

Applied physics letters, 2013-09, Vol.103 (14)

2013

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Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1555-1560

2013

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Hormonal responses in heavy training and recovery periods in an elite male weightlifter

Journal of sports science & medicine, 2008-12, Vol.7 (4), p.560-561

2008

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Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide―metal structure

Thin solid films, 2010-12, Vol.519 (5), p.1536-1539

2010

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hbox{In}_{0.5}\hbox{Ga}_{0.5}\hbox{As}$-Based Metal–Oxide–Semiconductor Capacitor on GaAs Substrate Using Metal–Organic Chemical Vapor Deposition

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.235-240

2013

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Conformal bilayer h-AlN epitaxy on WS2 by ALD with ultralow leakage current

van der Waals epitaxy of 2D h-AlN on TMDs by atomic layer deposition at 250 °C

Neuro-Inspired-in-Memory Computing Using Charge-Trapping MemTransistor on Germanium as Synaptic Device

Interface Characterization of HfO2/GaSb MOS Capacitors With Ultrathin Equivalent Oxide Thickness by Using Hydrogen Plasma Treatment

Acute Effects of Wearing Different Surgical Face Masks during High-Intensity, Short-Rest Resistance Exercise on Cardiorespiratory and Pulmonary Function and Perceptual Responses in Weightlifters

The Effect of Repetitive Drop Jumps among Different Heights on Bilateral Asymmetry of Countermovement Jumps

A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures

Demonstration of HfO2-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si0.8Ge0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger

Inhibition of the MEK/ERK pathway reduces microglial activation and interleukin-1-beta expression in spinal cord ischemia/reperfusion injury in rats

BEOL-Compatible Ferroelectric Capacitor of 5 nm Ultrathin HZO With High Remanent Polarization and Excellent Endurance

Learning effects of triple continuous jumping snatch intervention on the second pull of the snatch for novice lifters

Suppressing Threshold Voltage Drift in Sub-2 nm In2O3 Transistors with Improved Thermal Stability

In0.5Ga0.5As-Based Metal - Oxide - Semiconductor Capacitor on GaAs Substrate Using Metal - Organic Chemical Vapor Deposition

Aggressive Equivalent Oxide Thickness of ~0.7 nm on Si0.8Ge0.2 Through HfO2 Dielectric Direct Deposition

Electrical Characteristics of Si0.8Ge0.2 p-MOSFET With TMA Pre-Doping and NH3 Plasma IL Treatment

Effect of different resistance increments during warm-up on the snatch performance of male weightlifters

High-Accuracy Deep Neural Networks Using a Contralateral-Gated Analog Synapse Composed of Ultrathin MoS₂ nFET and Nonvolatile Charge-Trap Memory

A two-dimensional RAKE receiver architecture with an FFT-based matched filtering

Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices

Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing

Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density

Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures

Hormonal responses in heavy training and recovery periods in an elite male weightlifter

Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide―metal structure

hbox{In}_{0.5}\hbox{Ga}_{0.5}\hbox{As}$-Based Metal–Oxide–Semiconductor Capacitor on GaAs Substrate Using Metal–Organic Chemical Vapor Deposition

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