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1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance

IEEE electron device letters, 1999-08, Vol.20 (8), p.428-430

1999

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Analysis of lifetime control in high-voltage IGBTs

Solid-state electronics, 2002, Vol.46 (1), p.75-81

2002

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Suppression of parasitic JFET effect in trench IGBTs by using a self-aligned p base process

Solid-state electronics, 2002-11, Vol.46 (11), p.1907-1912

2002

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Silicon MOS controlled bipolar power switching devices using trench technology

International journal of electronics, 1999-10, Vol.86 (10), p.1153-1168

1999

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Transient analysis of 3.3kV double-side double-gate IGBTs

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs, 2004, p.273-276

2004

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The effect of static and dynamic parasitic charge in the termination area of high voltage devices and possible solutions

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094), 2000, p.263-266

2000

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Anisotropy and asymmetry of the hyperfine spectrum of holmium in magnetically ordered RAl2 alloys

Journal of physics. F, Metal physics, 1983-01, Vol.13, p.1041

1983

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High power density IGBT module for high reliability applications

2009 IEEE 6th International Power Electronics and Motion Control Conference, 2009, p.274-280

2009

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Silicon MOS controlled bipolar power switching devices using trench technology: Power Electronics Technology

International journal of electronics, 1999, Vol.86 (10), p.1153-1168

1999

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Characterization of a bi-directional double-side double-gate IGBT fabricated by wafer bonding

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216), 2001, p.125-128

2001

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Ultra-high voltage device termination using the 3D RESURF (super-junction) concept - experimental demonstration at 6.5 kV

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216), 2001, p.129-132

2001

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Development of the Next Generation of Insulated Gate Bipolar Tranistors based on Trench Technology

27th European Solid-State Device Research Conference, 1997, p.504-507

1997

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The Hyperfine Interaction of Holmium in Magnetically Ordered Cubic Compounds

Waind, P R

1981

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Anisotropy and Asymmetry of the Hyperfine Spectrum of Holmium in Magnetically Ordered RAl sub 2 Alloys

Journal of physics. F, Metal physics, 1983-05, Vol.13 (5), p.1041-1056

1983

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Anisotropy and asymmetry of the hyperfine spectrum of holmium in magnetically ordered RAl 2 alloys

Journal of physics. F, Metal physics, 1983-05, Vol.13 (5), p.1041-1056

1983

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The Current Sharing Optimization of Paralleled IGBTs in a Power Module Tile Using a PSpice Frequency Dependent Impedance Model

IEEE transactions on power electronics, 2008-01, Vol.23 (1), p.206-217

2008

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Advanced SPICE modeling of large power IGBT modules

IEEE transactions on industry applications, 2004-05, Vol.40 (3), p.710-716

2004

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4.5 kV-8 A SiC-Schottky Diodes / Si-IGBT Modules

Materials science forum, 2006-10, Vol.527-529, p.1163-1166

2006

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Advanced SPICE modeling of large power IGBT modules

Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344), 2002, Vol.4, p.2433-2436 vol.4

2002

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Trench gate IGBTs for zero current switching applications

Eighteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2003. APEC '03, 2003, Vol.2, p.933-937 vol.2

2003

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Idiopathic Pulmonary Haemosiderosis in an Adult

Thorax, 1959-03, Vol.14 (1), p.85-88

1959

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Advanced electro-thermal SPICE modeling of large power IGBTs

ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings, 2003, p.291-294

2003

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Accurate conduction and switching loss models of IGBTs for resonant converter design

2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551), 2004, Vol.4, p.2950-2955 Vol.4

2004

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Characterising trench IGBTs in resonant switching using single ended and half-bridge application circuits

The Fifth International Conference on Power Electronics and Drive Systems, 2003. PEDS 2003, 2003, Vol.1, p.60-65 Vol.1

2003

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Characteristics of Trench gate and DMOS IGBTs in a ZCS single-ended resonant inverter

ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575), 2002, p.87-91

2002

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1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance

Analysis of lifetime control in high-voltage IGBTs

Suppression of parasitic JFET effect in trench IGBTs by using a self-aligned p base process

Silicon MOS controlled bipolar power switching devices using trench technology

Transient analysis of 3.3kV double-side double-gate IGBTs

The effect of static and dynamic parasitic charge in the termination area of high voltage devices and possible solutions

Anisotropy and asymmetry of the hyperfine spectrum of holmium in magnetically ordered RAl2 alloys

High power density IGBT module for high reliability applications

Silicon MOS controlled bipolar power switching devices using trench technology: Power Electronics Technology

Characterization of a bi-directional double-side double-gate IGBT fabricated by wafer bonding

Ultra-high voltage device termination using the 3D RESURF (super-junction) concept - experimental demonstration at 6.5 kV

Development of the Next Generation of Insulated Gate Bipolar Tranistors based on Trench Technology

The Hyperfine Interaction of Holmium in Magnetically Ordered Cubic Compounds

Anisotropy and Asymmetry of the Hyperfine Spectrum of Holmium in Magnetically Ordered RAl sub 2 Alloys

Anisotropy and asymmetry of the hyperfine spectrum of holmium in magnetically ordered RAl 2 alloys

The Current Sharing Optimization of Paralleled IGBTs in a Power Module Tile Using a PSpice Frequency Dependent Impedance Model

Advanced SPICE modeling of large power IGBT modules

4.5 kV-8 A SiC-Schottky Diodes / Si-IGBT Modules

Advanced SPICE modeling of large power IGBT modules

Trench gate IGBTs for zero current switching applications

Idiopathic Pulmonary Haemosiderosis in an Adult

Advanced electro-thermal SPICE modeling of large power IGBTs

Accurate conduction and switching loss models of IGBTs for resonant converter design

Characterising trench IGBTs in resonant switching using single ended and half-bridge application circuits

Characteristics of Trench gate and DMOS IGBTs in a ZCS single-ended resonant inverter

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