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Plasma cleaning and nitridation of sapphire substrates for AlxGa1−xN epitaxy as studied by x-ray photoelectron diffraction

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1998-07, Vol.16 (4), p.2008-2015

1998

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Efficient and uniform production of III-nitride films by multiwafer MOVPE

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1), p.1-7

1997

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Multiwafer MOVPE technology for low dimensional Ga-Al-In-N structures

Materials science & engineering. B, Solid-state materials for advanced technology, 1998-02, Vol.51 (1), p.39-43

1998

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Al-Ga-In-Nitride heterostructures: MOVPE growth in production reactors and characterization

Journal of electronic materials, 1997-10, Vol.26 (10), p.1123-1126

1997

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MOVPE production reactors for high temperature electronics

Journal of electronic materials, 1998-04, Vol.27 (4), p.342-345

1998

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Low-temperature growth and nitrogen doping of ZnSe using diethylzinc and ditertiarybutylselenide in a plasma-stimulated low-pressure metalorganic vapour phase epitaxy system

Journal of crystal growth, 1994-12, Vol.145 (1), p.582-588

1994

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Low temperature growth and planar doping of ZnSe in a plasma-stimulated LP-MOVPE system

Journal of electronic materials, 1995-11, Vol.24 (11), p.1671-1675

1995

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Plasma Cleaning and Nitridation of Sapphire Substrates for AlxGa1-xN Epitaxy as Studied by ARXPS and XPD

MRS proceedings, 1997, Vol.468

1997

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Electrical Characterisation of MOVPE Grown Au/ZnSE/GaAs Heterostructures

Materials science forum, 1995, Vol.182-184, p.171-174

1995

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Oxygen and tellurium impurities in zinc selenide grown by metalorganic vapour phase epitaxy

Journal of crystal growth, 1995-01, Vol.146 (1-4), p.592-598

1995

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Comparison of the Structural Properties of Epitaxial ZnSe Layers Grown on GaAs (001) by MOVPE Using Different Selenium Precursors

Materials science forum, 1995, Vol.182-184, p.159-162

1995

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Temperature and excitation dependent photoluminescence of undoped and nitrogen-doped ZnSe epilayers

Physica status solidi. B. Basic research, 1996-01, Vol.193 (1), p.257-267

1996

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Reliable, Reproducible and Efficient MOCVD of III-Nitrides in Production Scale Reactors

MRS proceedings, 1997, Vol.468, Article 7

1997

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Quantum Yield of Band-Edge Emission between 77 and 300 K of Undoped and Nitrogen-Doped ZnSe Epilayers Grown by MOVPE

Materials science forum, 1995, Vol.182-184, p.243-246

1995

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Low Temperature Growth and Planar Nitrogen Doping of ZnSe in a Plasma-Stimulated LP-MOVPE System

Materials science forum, 1995, Vol.182-184, p.35-38

1995

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MOVPE production reactors for high temperature electronics : III-V nitrides and silicon carbide

Journal of electronic materials, 1998, Vol.27 (4), p.342-344

1998

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Large-Area Growth of InGaN/AlGaN Using In Situ Monitoring

MRS proceedings, 1996, Vol.449, Article 265

1996

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Plasma Cleaning and Nitridation of Sapphire Substrates for Al x Ga 1-x N Epitaxy as Studied by ARXPS and XPD

MRS proceedings, 1997, Vol.468, Article 193

1997

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High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors

MRS Internet journal of nitride semiconductor research, 1997, Vol.2, Article e9

1997

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High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors

MRS Internet journal of nitride semiconductor research, 1996-01, Vol.1

1996

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AlGaN/InGaN/GaN materials engineering for lasers and optoelectronic applications [MOCVD reactors]

Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society, 1996, Vol.1, p.259-260 vol.1

1996

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Production of III-nitride films for LED and laser applications by multiwafer MOVPE

Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting, 1997, Vol.2, p.376-377 vol.2

1997

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Loss of Independent Living in Patients Undergoing Transcatheter or Surgical Aortic Valve Replacement: A Retrospective Cohort Study

Anesthesia and analgesia, 2023-09, Vol.137 (3), p.618-628

2023

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A comparison of silicon and oxygen doping of GaN and optical and electrical properties of deposited layers

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application, 1997, p.11-12

1997

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Multifunctional multilayer graphene/elastomer nanocomposites

European polymer journal, 2015-10, Vol.71, p.99-113

2015

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Plasma cleaning and nitridation of sapphire substrates for AlxGa1−xN epitaxy as studied by x-ray photoelectron diffraction

Efficient and uniform production of III-nitride films by multiwafer MOVPE

Multiwafer MOVPE technology for low dimensional Ga-Al-In-N structures

Al-Ga-In-Nitride heterostructures: MOVPE growth in production reactors and characterization

MOVPE production reactors for high temperature electronics

Low-temperature growth and nitrogen doping of ZnSe using diethylzinc and ditertiarybutylselenide in a plasma-stimulated low-pressure metalorganic vapour phase epitaxy system

Low temperature growth and planar doping of ZnSe in a plasma-stimulated LP-MOVPE system

Plasma Cleaning and Nitridation of Sapphire Substrates for AlxGa1-xN Epitaxy as Studied by ARXPS and XPD

Electrical Characterisation of MOVPE Grown Au/ZnSE/GaAs Heterostructures

Oxygen and tellurium impurities in zinc selenide grown by metalorganic vapour phase epitaxy

Comparison of the Structural Properties of Epitaxial ZnSe Layers Grown on GaAs (001) by MOVPE Using Different Selenium Precursors

Temperature and excitation dependent photoluminescence of undoped and nitrogen-doped ZnSe epilayers

Reliable, Reproducible and Efficient MOCVD of III-Nitrides in Production Scale Reactors

Quantum Yield of Band-Edge Emission between 77 and 300 K of Undoped and Nitrogen-Doped ZnSe Epilayers Grown by MOVPE

Low Temperature Growth and Planar Nitrogen Doping of ZnSe in a Plasma-Stimulated LP-MOVPE System

MOVPE production reactors for high temperature electronics : III-V nitrides and silicon carbide

Large-Area Growth of InGaN/AlGaN Using In Situ Monitoring

Plasma Cleaning and Nitridation of Sapphire Substrates for Al x Ga 1-x N Epitaxy as Studied by ARXPS and XPD

High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors

High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors

AlGaN/InGaN/GaN materials engineering for lasers and optoelectronic applications [MOCVD reactors]

Production of III-nitride films for LED and laser applications by multiwafer MOVPE

Loss of Independent Living in Patients Undergoing Transcatheter or Surgical Aortic Valve Replacement: A Retrospective Cohort Study

A comparison of silicon and oxygen doping of GaN and optical and electrical properties of deposited layers

Multifunctional multilayer graphene/elastomer nanocomposites

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