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0.00035 mm 2 on‐chip leakage sensing unit for various devices in 10 nm FinFET process

Electronics letters, 2018-02, Vol.54 (4), p.213-215

2018

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0.00035 mm2 on-chip leakage sensing unit for various devices in 10 nm FinFET process

Electronics letters, 2018-02, Vol.54 (4), p.213-215

2018

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0.01% Hypochlorous Acid as an Alternative Skin Antiseptic: An In Vitro Comparison

Dermatologic surgery, 2018-12, Vol.44 (12), p.1489-1493

2018

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A 0.039um2 high performance eDRAM cell based on 32nm High-K/Metal SOI technology

2010 International Electron Devices Meeting, 2010, p.27.5.1-27.5.4

2010

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A 0.1-[mu]m 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

IEEE journal of solid-state circuits, 2007-01, Vol.42 (1), p.210-218

2007

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A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

IEEE journal of solid-state circuits, 2007, Vol.42 (1), p.210-218

2007

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0.1-nm narrow bandwidth transmission of a 2.5-Gb/s spectrum-sliced incoherent light channel using an all-optical bandwidth expansion technique at the receiver

IEEE photonics technology letters, 1998-10, Vol.10 (10), p.1501-1503

1998

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In 0.11 Ga 0.89 N‐based p‐i‐n photodetector

Physica status solidi. C, 2009-06, Vol.6 (S2)

2009

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The 0.125 degree finite-volume general circulation model on the NASA Columbia supercomputer: Preliminary simulations of mesoscale vortices

Geophysical research letters, 2006-03, Vol.33 (5), p.L05801-n/a

2006

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0.15 μm gate length MHEMT technology for 77GHz automotive radar applications

2004

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A 0.15 /spl mu/m CMOS foundry technology with 0.1 /spl mu/m devices for high performance applications

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104), 2000, p.146-147

2000

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A 0.17-1.4GHz low-jitter all digital DLL with TDC-based DCC using pulse width detection scheme

ESSCIRC 2008 - 34th European Solid-State Circuits Conference, 2008, p.82-85

2008

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A 0.18 m CMOS 3.125-Gb/s Digitally Controlled Adaptive Line Equalizer with Feed-Forward Swing Control for Backplane Serial Link

IEICE transactions on electronics, 2006-10, Vol.E89-C (10), p.1454-1459

2006

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0.18 mu m CMOS dual-band low-noise amplifier for ZigBee development

Electronics letters, 2010-01, Vol.46 (1), p.1-1

2010

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0.18 [mu]m CMOS dual-band low-noise amplifier for ZigBee development

Electronics letters, 2010-01, Vol.46 (1), p.1

2010

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A 0.18 /spl mu/m logic-based MRAM technology for high performance nonvolatile memory applications

2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407), 2003, p.15-16

2003

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0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs

2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.401-404

2012

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A 0.2-2 GHz 12 mW multiplying DLL for low-jitter clock synthesis in highly-integrated data communication chips

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315), 2002, Vol.1, p.76-77 vol.1

2002

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A 0.2-2GHz 12mW multiplying DLL for low-jitter clock synthesis in highly-integrated data-communication chips

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315), 2002, Vol.2, p.56-400

2002

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0.2-μm n-channel and p-channel MOSFETs integrated on oxidation-planarized twin-tubs

IEEE electron device letters, 1996-11, Vol.17 (11), p.500-502

1996

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0.2-mu m n-channel and p-channel MOSFETs integrated onoxidation-planarized twin-tubs

IEEE electron device letters, 1996-11, Vol.17 (11), p.500-502

1996

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A ~0.2―solar―mass protostar with a Keplerian disk in the very young L1527 IRS system

Nature (London), 2012-12, Vol.492 (7427), p.83-85

2012

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A 0.25-μm CMOS 1.9-GHz PHS RF transceiver with a 150-kHz low-IF architecture

IEEE journal of solid-state circuits, 2007-06, Vol.42 (6), p.1318-1327

2007

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A 0.25-[mu]m CMOS 1.9-GHz PHS RF Transceiver With a 150-kHz Low-IF Architecture

IEEE journal of solid-state circuits, 2007-06, Vol.42 (6), p.1318-1327

2007

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A 0.25- \mum CMOS 1.9-GHz PHS RF Transceiver With a 150-kHz Low-IF Architecture

IEEE journal of solid-state circuits, 2007-06, Vol.42 (6), p.1318-1327

2007

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0.00035 mm 2 on‐chip leakage sensing unit for various devices in 10 nm FinFET process

0.00035 mm2 on-chip leakage sensing unit for various devices in 10 nm FinFET process

0.01% Hypochlorous Acid as an Alternative Skin Antiseptic: An In Vitro Comparison

A 0.039um2 high performance eDRAM cell based on 32nm High-K/Metal SOI technology

A 0.1-[mu]m 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

0.1-nm narrow bandwidth transmission of a 2.5-Gb/s spectrum-sliced incoherent light channel using an all-optical bandwidth expansion technique at the receiver

In 0.11 Ga 0.89 N‐based p‐i‐n photodetector

The 0.125 degree finite-volume general circulation model on the NASA Columbia supercomputer: Preliminary simulations of mesoscale vortices

0.15 μm gate length MHEMT technology for 77GHz automotive radar applications

A 0.15 /spl mu/m CMOS foundry technology with 0.1 /spl mu/m devices for high performance applications

A 0.17-1.4GHz low-jitter all digital DLL with TDC-based DCC using pulse width detection scheme

A 0.18 m CMOS 3.125-Gb/s Digitally Controlled Adaptive Line Equalizer with Feed-Forward Swing Control for Backplane Serial Link

0.18 mu m CMOS dual-band low-noise amplifier for ZigBee development

0.18 [mu]m CMOS dual-band low-noise amplifier for ZigBee development

A 0.18 /spl mu/m logic-based MRAM technology for high performance nonvolatile memory applications

0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs

A 0.2-2 GHz 12 mW multiplying DLL for low-jitter clock synthesis in highly-integrated data communication chips

A 0.2-2GHz 12mW multiplying DLL for low-jitter clock synthesis in highly-integrated data-communication chips

0.2-μm n-channel and p-channel MOSFETs integrated on oxidation-planarized twin-tubs

0.2-mu m n-channel and p-channel MOSFETs integrated onoxidation-planarized twin-tubs

A ~0.2―solar―mass protostar with a Keplerian disk in the very young L1527 IRS system

A 0.25-μm CMOS 1.9-GHz PHS RF transceiver with a 150-kHz low-IF architecture

A 0.25-[mu]m CMOS 1.9-GHz PHS RF Transceiver With a 150-kHz Low-IF Architecture

A 0.25- \mum CMOS 1.9-GHz PHS RF Transceiver With a 150-kHz Low-IF Architecture

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