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Giant electrostriction-like response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si (100)

Nature communications, 2024-02, Vol.15 (1), p.1428-1428, Article 1428

2024

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Reactive pulsed laser deposition of low particulate density and epitaxial TiN films on Si (100) for functional oxide integration

Thin solid films, 2022-09, Vol.758, p.139456, Article 139456

2022

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Wafer scale epitaxial germanium on silicon (001) using pulsed laser annealing

Materials letters, 2021-02, Vol.285, p.129208, Article 129208

2021

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TMAH Pretreatment to Minimize Ohmic Contact Resistance in InAlN/GaN-on-Si RF HEMTs

IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.5609-5613

2023

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Effect of nitrogen annealing on the optoelectronic properties of manganese vanadate

Semiconductor science and technology, 2021-05, Vol.36 (5), p.55016

2021

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Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with VTH>5V and On‐Current >0.5Amm−1

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7)

2020

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Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with V TH > 5V and On‐Current > 0.5 A mm −1

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7)

2020

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Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with VTH > 5V and On‐Current > 0.5 A mm−1

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Scandium-Based Ohmic Contacts to InAlN/GaN Heterostructures on Silicon

IEEE electron device letters, 2021-04, Vol.42 (4), p.497-500

2021

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Remote epitaxy-based atmospherically stable hybrid graphene template for fast and versatile transfer of complex ferroelectric oxides onto Si

Materials Today Electronics, 2024-06, Vol.8, p.100091, Article 100091

2024

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Epitaxial BaTiO3 on Si(100) with In-Plane and Out-of-Plane Polarization Using a Single TiN Transition Layer

ACS applied electronic materials, 2021-02, Vol.3 (2), p.687-695

2021

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Investigation of Ta 2 O 5 as an Alternative High- ${k}$ Dielectric for InAlN/GaN MOS-HEMT on Si

IEEE transactions on electron devices, 2019-03, Vol.66 (3), p.1230-1235

2019

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Texture and phase transition hysteresis in epitaxially integrated VO2 films on TiN/Si(100)

Materialia, 2024-05, Vol.34, p.102085, Article 102085

2024

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Magneto-structural study of the multiferroic BiFeO sub(3)-SrTiO sub(3)

Journal of magnetism and magnetic materials, 2014-09, Vol.365, p.76-82

2014

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Low Interface Resistance in Epitaxial β‑Ga2O3 Vertical Power Diodes on Silicon (100) Using TiN Buffer

ACS applied electronic materials, 2024-03, Vol.6 (3), p.2084-2092

2024

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Investigation of Ta2O5 as an Alternative High- Dielectric for InAlN/GaN MOS-HEMT on Si

IEEE transactions on electron devices, 2019-03, Vol.66 (3), p.1230-1235

2019

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Low Interface Resistance in Epitaxial β-Ga 2 O 3 Vertical Power Diodes on Silicon (100) Using TiN Buffer

ACS applied electronic materials, 2024-03, Vol.6 (3), p.2084-2092

2024

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Demonstration of high-responsivity epitaxial β-Ga 2 O 3 /GaN metal–heterojunction-metal broadband UV-A/UV-C detector

Applied physics express, 2018-06, Vol.11 (6), p.64101

2018

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Monolithic Epitaxial Integration of β-Ga 2 O 3 with 100 Si for Deep Ultraviolet Photodetectors

ACS applied electronic materials, 2022-04, Vol.4 (4), p.1619-1625

2022

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Monolithic Epitaxial Integration of β‑Ga2O3 with 100 Si for Deep Ultraviolet Photodetectors

ACS applied electronic materials, 2022-04, Vol.4 (4), p.1619-1625

2022

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Epitaxial BaTiO 3 on Si(100) with In-Plane and Out-of-Plane Polarization Using a Single TiN Transition Layer

ACS applied electronic materials, 2021-02, Vol.3 (2), p.687-695

2021

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Giant electrostriction-like response from defective non-ferroelectric epitaxial BaTiO 3 integrated on Si (100)

Nature communications, 2024-02, Vol.15 (1), p.1428

2024

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Magneto-structural study of the multiferroic BiFeO3–SrTiO3

Journal of magnetism and magnetic materials, 2014-09, Vol.365, p.76-82

2014

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Thin-Film Ferroelectric Material Qualification for On-Chip Electro-Optic Applications

2024 Conference on Lasers and Electro-Optics (CLEO), 2024, p.1-3

2024

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SYNTHESIS AND CHARECTERIZATION OF AlFeCrNi FOUR COMPONENT HIGH ENTROPY ALLOY BY MECHANICAL ALLOYING

International journal of engineering science and technology, 2011-05, Vol.3 (5), p.3876-3876

2011

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Giant electrostriction-like response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si (100)

Reactive pulsed laser deposition of low particulate density and epitaxial TiN films on Si (100) for functional oxide integration

Wafer scale epitaxial germanium on silicon (001) using pulsed laser annealing

TMAH Pretreatment to Minimize Ohmic Contact Resistance in InAlN/GaN-on-Si RF HEMTs

Effect of nitrogen annealing on the optoelectronic properties of manganese vanadate

Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with VTH>5V and On‐Current >0.5Amm−1

Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with V TH > 5V and On‐Current > 0.5 A mm −1

Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with VTH > 5V and On‐Current > 0.5 A mm−1

Scandium-Based Ohmic Contacts to InAlN/GaN Heterostructures on Silicon

Remote epitaxy-based atmospherically stable hybrid graphene template for fast and versatile transfer of complex ferroelectric oxides onto Si

Epitaxial BaTiO3 on Si(100) with In-Plane and Out-of-Plane Polarization Using a Single TiN Transition Layer

Investigation of Ta 2 O 5 as an Alternative High- ${k}$ Dielectric for InAlN/GaN MOS-HEMT on Si

Texture and phase transition hysteresis in epitaxially integrated VO2 films on TiN/Si(100)

Magneto-structural study of the multiferroic BiFeO sub(3)-SrTiO sub(3)

Low Interface Resistance in Epitaxial β‑Ga2O3 Vertical Power Diodes on Silicon (100) Using TiN Buffer

Investigation of Ta2O5 as an Alternative High- Dielectric for InAlN/GaN MOS-HEMT on Si

Low Interface Resistance in Epitaxial β-Ga 2 O 3 Vertical Power Diodes on Silicon (100) Using TiN Buffer

Demonstration of high-responsivity epitaxial β-Ga 2 O 3 /GaN metal–heterojunction-metal broadband UV-A/UV-C detector

Monolithic Epitaxial Integration of β-Ga 2 O 3 with 100 Si for Deep Ultraviolet Photodetectors

Monolithic Epitaxial Integration of β‑Ga2O3 with 100 Si for Deep Ultraviolet Photodetectors

Epitaxial BaTiO 3 on Si(100) with In-Plane and Out-of-Plane Polarization Using a Single TiN Transition Layer

Giant electrostriction-like response from defective non-ferroelectric epitaxial BaTiO 3 integrated on Si (100)

Magneto-structural study of the multiferroic BiFeO3–SrTiO3

Thin-Film Ferroelectric Material Qualification for On-Chip Electro-Optic Applications

SYNTHESIS AND CHARECTERIZATION OF AlFeCrNi FOUR COMPONENT HIGH ENTROPY ALLOY BY MECHANICAL ALLOYING

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