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High reliability InGaP/GaAs HBT

IEEE electron device letters, 1998-04, Vol.19 (4), p.115-117

1998

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IEEE_Xplore

A non-boundary-fitted-grid method, based on compact integrated-RBF approximations, for solving differential problems in multiply-connected domains

Journal of computational science, 2024-07, Vol.79, p.102311, Article 102311

2024

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Phonon scattering in thin silica films below 1 K

Journal of low temperature physics, 1998-10, Vol.113 (1-2), p.123-139

1998

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High prevalence of hospital-acquired infections caused by gram-negative carbapenem resistant strains in Vietnamese pediatric ICUs: A multi-centre point prevalence survey

Medicine (Baltimore), 2016-07, Vol.95 (27), p.e4099-e4099

2016

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Generation of Low-Energy Excitations in Silicon

Physical review letters, 1998-10, Vol.81 (15), p.3171-3174

1998

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The high-volume production of heterojunction bipolar transistors

JOM (1989), 1998-08, Vol.50 (8), p.45-47

1998

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Characterization of the silicon-on-insulator material formed by high-dose oxygen implantation using spectroscopic ellipsometry

Journal of applied physics, 1987-10, Vol.62 (8), p.3458-3461

1987

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Providing impetus, tools, and guidance to strengthen national capacity for antimicrobial stewardship in Viet Nam

PLoS medicine, 2013-05, Vol.10 (5), p.e1001429-e1001429

2013

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Halogen lamp recrystallization of silicon on insulating substrates

Journal of applied physics, 1983-01, Vol.54 (1), p.437-439

1983

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Determination of minority-carrier generation lifetime in beam-recrystallized silicon-on-insulator structure by using a depletion-mode transistor

Applied physics letters, 1985-11, Vol.47 (9), p.950-952

1985

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High quality silicon-on-insulator structure formed by oxygen implantation and lamp annealing

Applied physics letters, 1988-03, Vol.52 (10), p.819-821

1988

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A simple electrical method to determine the Si and oxide thicknesses in SOI materials

IEEE electron device letters, 1991-08, Vol.12 (8), p.427-429

1991

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IEEE_Xplore

A simple characterization method for silicon-on-insulator materials using a depletion-mode MOSFET

IEEE electron device letters, 1990-11, Vol.11 (11), p.552-555

1990

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IEEE_Xplore

Experimental I-V characteristics of AlGaAs/GaAs heterojunction bipolar transistors with very thin bases

Electronics letters, 1996-01, Vol.32 (14), p.1323-1324

1996

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Lightweight, low cost GaAs solar cells on 4″ epitaxial liftoff (ELO) wafers

2008 33rd IEEE Photovoltaic Specialists Conference, 2008, p.1-4

2008

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IEEE_Xplore

Microanalysis of single-crystal Si recrystallized using halogen lamps

Journal of applied physics, 1983-07, Vol.54 (7), p.3892-3896

1983

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Self-aligned Si MESFETs fabricated in thin silicon-on-insulator films

Electronics letters, 1987, Vol.23 (7), p.354-355

1987

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Transient effect in thinned silicon-on-insulator devices

Electronics letters, 1986, Vol.22 (8), p.412-413

VU, D. P

1986

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Characterization of beam-recrystallized Si films and their Si/SiO2 interfaces in silicon-on-insulator structures: the very thin Si film case

Applied physics letters, 1988-01, Vol.52 (1), p.45-47

1988

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Phonon scattering and internal friction in dielectric and metallic films at low temperatures

Physical review. B, Condensed matter, 2001-03, Vol.63 (12), Article 125421

2001

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Characterization of beam-recrystallized Si films and their Si/SiO2 interfaces in silicon-on-insulator structures

Applied physics letters, 1986-01, Vol.48 (1), p.50-52

1986

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Electrical performances of devices made in SOI films obtained by lamp ZMR

IEEE circuits and devices magazine, 1987-07, Vol.3 (4), p.27-31

1987

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IEEE_Xplore

Electrical properties of halogen lamp recrystallized silicon films on SiO2

Journal of applied physics, 1984-01, Vol.56 (6), p.1682-1686

1984

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Fast annealing of 4 in. arsenic-implanted silicon wafers using an imaging furnace

Electronics letters, 1982-08, Vol.18 (16), p.694

1982

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High gain AlGaAs/GaAs HBTs grown by MOCVD

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.451-454

1997

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IEEE_Xplore

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High reliability InGaP/GaAs HBT

A non-boundary-fitted-grid method, based on compact integrated-RBF approximations, for solving differential problems in multiply-connected domains

Phonon scattering in thin silica films below 1 K

High prevalence of hospital-acquired infections caused by gram-negative carbapenem resistant strains in Vietnamese pediatric ICUs: A multi-centre point prevalence survey

Generation of Low-Energy Excitations in Silicon

The high-volume production of heterojunction bipolar transistors

Characterization of the silicon-on-insulator material formed by high-dose oxygen implantation using spectroscopic ellipsometry

Providing impetus, tools, and guidance to strengthen national capacity for antimicrobial stewardship in Viet Nam

Halogen lamp recrystallization of silicon on insulating substrates

Determination of minority-carrier generation lifetime in beam-recrystallized silicon-on-insulator structure by using a depletion-mode transistor

High quality silicon-on-insulator structure formed by oxygen implantation and lamp annealing

A simple electrical method to determine the Si and oxide thicknesses in SOI materials

A simple characterization method for silicon-on-insulator materials using a depletion-mode MOSFET

Experimental I-V characteristics of AlGaAs/GaAs heterojunction bipolar transistors with very thin bases

Lightweight, low cost GaAs solar cells on 4″ epitaxial liftoff (ELO) wafers

Microanalysis of single-crystal Si recrystallized using halogen lamps

Self-aligned Si MESFETs fabricated in thin silicon-on-insulator films

Transient effect in thinned silicon-on-insulator devices

Characterization of beam-recrystallized Si films and their Si/SiO2 interfaces in silicon-on-insulator structures: the very thin Si film case

Phonon scattering and internal friction in dielectric and metallic films at low temperatures

Characterization of beam-recrystallized Si films and their Si/SiO2 interfaces in silicon-on-insulator structures

Electrical performances of devices made in SOI films obtained by lamp ZMR

Electrical properties of halogen lamp recrystallized silicon films on SiO2

Fast annealing of 4 in. arsenic-implanted silicon wafers using an imaging furnace

High gain AlGaAs/GaAs HBTs grown by MOCVD

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