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Morphology identification of the thin film phases of vacuum evaporated pentacene on SiO2 substrates

Synthetic metals, 1999-07, Vol.104 (3), p.175-178

1999

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Strain Relaxation in Hexagonally Close-Packed Metal-Metal Interfaces

Physical review letters, 1995-01, Vol.74 (5), p.754-757

1995

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Surfactant-induced layer-by-layer growth of Ag on Ag(111): Origins and side effects

Physical review letters, 1994-06, Vol.72 (24), p.3843-3846

1994

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Intrinsic charge transport properties of an organic single crystal determined using a multiterminal thin-film transistor

Applied physics letters, 1998-12, Vol.73 (26), p.3884-3886

1998

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Single crystallites in “planar polycrystalline” oligothiophene films: Determination of orientation and thickness by polarization microscopy

Journal of applied physics, 1998-04, Vol.83 (7), p.3816-3824

1998

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Charge trapping instabilities of sexithiophene Thin Film Transistors

Synthetic metals, 1999-05, Vol.101 (1-3), p.608-609

1999

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Growth mode and interface structure of Ag on the HF-treated Si(111):H surface

Surface science, 1996-04, Vol.350 (1), p.229-238

1996

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Light emission in reverse bias operation from poly(3-octylthiophene)-based light emitting diodes

Applied physics letters, 1995-05, Vol.66 (19), p.2540-2542

1995

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Morphology of quaterthiophene thin films in organic field effect transistors

Synthetic metals, 1997, Vol.84 (1), p.583-584

1997

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Reversible place-exchange during film growth: a mechanism for surfactant transport

Surface science, 1996-06, Vol.355 (1), p.L375-L380

1996

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Monolayer resolution in medium-energy ion-scattering experiments on the NiSi2 (111) surface

Physical review letters, 1991-08, Vol.67 (9), p.1134-1137

1991

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Light-emitting diodes based on polythiophene: influence of the metal workfunction on rectification properties

Synthetic metals, 1996, Vol.76 (1), p.85-89

1996

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Formation of epitaxial β-FeSi2 films on Si(001) as studied by medium-energy ion scattering

Journal of applied physics, 1993-02, Vol.73 (3), p.1104-1109

1993

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Sb-enhanced nucleation in the homoepitaxial growth of Ag(111)

Physical review. B, Condensed matter, 1998-02, Vol.57 (7), p.4127-4131

1998

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A new Monte Carlo model for the calculation of MEIS energy spectra

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1992-02, Vol.64 (1), p.716-720

1992

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Oxidation of Al(111)

Surface science, 1993-05, Vol.287, p.438-442

1993

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Determination of the coordination number of Co atoms at the CoSi2 (A,B)/Si(111) interface by transmission electron microscopy

Applied physics letters, 1989-08, Vol.55 (7), p.648-650

1989

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Structure determination of the NiSi2(111) surface with medium-energy ion backscattering from individual monolayers

Surface science, 1993-06, Vol.290 (3), p.255-266

1993

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The initial stages of the oxidation of Al(111). II

Surface science, 1993-10, Vol.296 (2), p.141-148

1993

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Nickel and cobalt silicides on silicon: Thin-film reaction and interface structure

Applied surface science, 1989-09, Vol.38 (1), p.13-26

1989

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Importance of the additional step-edge barrier in determining film morphology during epitaxial growth

Physical review. B, Condensed matter, 1995-05, Vol.51 (20), p.14790-14793

1995

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Formation of ironsilicide on Si(001)

Applied surface science, 1993-01, Vol.70 (1-4), p.564-568

1993

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Morphology identification of the thin film phases of vacuum evaporated pentacene on SIO 2 substrates

Synthetic metals, 1999, Vol.104 (3), p.175-178

1999

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Medium-energy ion-scattering study of a possible relation between the Schottky-barrier height and the defect density at NiSi2/Si(111) interfaces

Physical review. B, Condensed matter, 1990-11, Vol.42 (15), p.9598-9608

1990

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Microscopic Aspects of Thin Metal Film Epitaxial Growth on Metallic Substrates

Berichte der Bunsengesellschaft für Physikalische Chemie, 1993-03, Vol.97 (3), p.522-537

1993

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Morphology identification of the thin film phases of vacuum evaporated pentacene on SiO2 substrates

Strain Relaxation in Hexagonally Close-Packed Metal-Metal Interfaces

Surfactant-induced layer-by-layer growth of Ag on Ag(111): Origins and side effects

Intrinsic charge transport properties of an organic single crystal determined using a multiterminal thin-film transistor

Single crystallites in “planar polycrystalline” oligothiophene films: Determination of orientation and thickness by polarization microscopy

Charge trapping instabilities of sexithiophene Thin Film Transistors

Growth mode and interface structure of Ag on the HF-treated Si(111):H surface

Light emission in reverse bias operation from poly(3-octylthiophene)-based light emitting diodes

Morphology of quaterthiophene thin films in organic field effect transistors

Reversible place-exchange during film growth: a mechanism for surfactant transport

Monolayer resolution in medium-energy ion-scattering experiments on the NiSi2 (111) surface

Light-emitting diodes based on polythiophene: influence of the metal workfunction on rectification properties

Formation of epitaxial β-FeSi2 films on Si(001) as studied by medium-energy ion scattering

Sb-enhanced nucleation in the homoepitaxial growth of Ag(111)

A new Monte Carlo model for the calculation of MEIS energy spectra

Oxidation of Al(111)

Determination of the coordination number of Co atoms at the CoSi2 (A,B)/Si(111) interface by transmission electron microscopy

Structure determination of the NiSi2(111) surface with medium-energy ion backscattering from individual monolayers

The initial stages of the oxidation of Al(111). II

Nickel and cobalt silicides on silicon: Thin-film reaction and interface structure

Importance of the additional step-edge barrier in determining film morphology during epitaxial growth

Formation of ironsilicide on Si(001)

Morphology identification of the thin film phases of vacuum evaporated pentacene on SIO 2 substrates

Medium-energy ion-scattering study of a possible relation between the Schottky-barrier height and the defect density at NiSi2/Si(111) interfaces

Microscopic Aspects of Thin Metal Film Epitaxial Growth on Metallic Substrates

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