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Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

Crystal growth & design, 2016-06, Vol.16 (6), p.3409-3415

2016

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Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications

Scientific reports, 2017-11, Vol.7 (1), p.15212-8, Article 15212

2017

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Investigation of the Performance of HEMT-Based NO, NO₂ and NH₃ Exhaust Gas Sensors for Automotive Antipollution Systems

Sensors (Basel, Switzerland), 2016-02, Vol.16 (3), p.273-273

2016

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Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

Scientific reports, 2017-04, Vol.7 (1), p.786-8, Article 786

2017

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Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

Applied physics letters, 2016-04, Vol.108 (17)

2016

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How to Interpret the Coefficients of Spatial Models: Spillovers, Direct and Indirect Effects

Spatial demography, 2016-10, Vol.4 (3), p.175-205

2016

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Optical-fiber source of polarization-entangled photons in the 1550 nm telecom band

Physical review letters, 2005-02, Vol.94 (5), p.053601.1-053601.4, Article 053601

2005

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Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: A simulation study

Materials science & engineering. B, Solid-state materials for advanced technology, 2024-03, Vol.301, p.117185, Article 117185

2024

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Experimental Study and Device Design of NO, NO2, and NH3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT

IEEE sensors journal, 2016-09, Vol.16 (18), p.6828-6838

2016

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MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates

Journal of crystal growth, 2019-02, Vol.507, p.352-356

2019

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Demography as a Spatial Social Science

Population research and policy review, 2007-12, Vol.26 (5/6), p.457-476

Voss, Paul R.

2007

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Control of the Mechanical Adhesion of III–V Materials Grown on Layered h‑BN

ACS applied materials & interfaces, 2020-12, Vol.12 (49), p.55460-55466

2020

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Nanopyramid-based absorber to boost the efficiency of InGaN solar cells

Solar energy, 2019-09, Vol.190, p.93-103

2019

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Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride

Advanced materials interfaces, 2019-08, Vol.6 (16), p.n/a

2019

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A 24 km fiber-based discretely signaled continuous variable quantum key distribution system

Optics express, 2009-12, Vol.17 (26), p.24244-24249

2009

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Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

Scientific reports, 2020-12, Vol.10 (1), p.21709-21709, Article 21709

2020

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Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions

Nanomaterials (Basel, Switzerland), 2021-01, Vol.11 (1), p.211

2021

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Effectiveness and Kinematic Analysis of Initial Step Patterns for Multidirectional Acceleration in Team and Racquet Sports

Journal of human kinetics, 2023-01, Vol.85 (1), p.13-22

2023

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Scaling up of Growth, Fabrication, and Device Transfer Process for GaN‐based LEDs on H‐BN Templates to 6‐inch Sapphire Substrates

Advanced materials technologies, 2023-09, Vol.8 (18)

2023

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Heterogeneous Integration of Thin-Film InGaN-Based Solar Cells on Foreign Substrates with Enhanced Performance

ACS photonics, 2018-08, Vol.5 (8), p.3003-3008

2018

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Spatio-temporal dimensions of child poverty in America, 1990–2010

Environment and planning. A, 2016-01, Vol.48 (1), p.172-191

2016

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BAlN thin layers for deep UV applications

Physica status solidi. A, Applications and materials science, 2015-04, Vol.212 (4), p.745-750

2015

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MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronics

APL materials, 2021-06, Vol.9 (6)

2021

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Monolithic Free-Standing Large-Area Vertical III‑N Light-Emitting Diode Arrays by One-Step h‑BN-Based Thermomechanical Self-Lift-Off and Transfer

ACS applied electronic materials, 2021-06, Vol.3 (6), p.2614-2621

2021

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Graphene quantum interference photodetector

Beilstein journal of nanotechnology, 2015-03, Vol.6 (1), p.726-735

2015

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Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications

Investigation of the Performance of HEMT-Based NO, NO₂ and NH₃ Exhaust Gas Sensors for Automotive Antipollution Systems

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

How to Interpret the Coefficients of Spatial Models: Spillovers, Direct and Indirect Effects

Optical-fiber source of polarization-entangled photons in the 1550 nm telecom band

Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: A simulation study

Experimental Study and Device Design of NO, NO2, and NH3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT

MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates

Demography as a Spatial Social Science

Control of the Mechanical Adhesion of III–V Materials Grown on Layered h‑BN

Nanopyramid-based absorber to boost the efficiency of InGaN solar cells

Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride

A 24 km fiber-based discretely signaled continuous variable quantum key distribution system

Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions

Effectiveness and Kinematic Analysis of Initial Step Patterns for Multidirectional Acceleration in Team and Racquet Sports

Scaling up of Growth, Fabrication, and Device Transfer Process for GaN‐based LEDs on H‐BN Templates to 6‐inch Sapphire Substrates

Heterogeneous Integration of Thin-Film InGaN-Based Solar Cells on Foreign Substrates with Enhanced Performance

Spatio-temporal dimensions of child poverty in America, 1990–2010

BAlN thin layers for deep UV applications

MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronics

Monolithic Free-Standing Large-Area Vertical III‑N Light-Emitting Diode Arrays by One-Step h‑BN-Based Thermomechanical Self-Lift-Off and Transfer

Graphene quantum interference photodetector

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