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Design and Simulation of Near-Terahertz GaN Photoconductive Switches-Operation in the Negative Differential Mobility Regime and Pulse Compression

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.521-532

2021

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Design considerations for three-dimensional betavoltaics

AIP advances, 2019-06, Vol.9 (6), p.065208-065208-10

2019

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Simulating charged defects at database scale

Journal of applied physics, 2024-04, Vol.135 (14)

2024

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Performance Modeling of Silicon Carbide Photoconductive Switches for High-Power and High-Frequency Applications

IEEE journal of the Electron Devices Society, 2020-01, Vol.8, p.1118-1128

2020

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Photoconductive Switch With High Sub-Bandgap Responsivity in Nitrogen-Doped Diamond

IEEE electron device letters, 2020-07, Vol.41 (7), p.1070-1073

2020

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Design considerations for gallium arsenide pulse compression photoconductive switch

Journal of applied physics, 2022-04, Vol.131 (13)

2022

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A Total Internal Reflection Photoconductive Switch

IEEE electron device letters, 2019-05, Vol.40 (5), p.734-737

2019

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Extrinsic Absorption Pathways in Vanadium‐Doped SiC Measured Using a Total Internal Reflection Geometry

Physica status solidi. A, Applications and materials science, 2020-10, Vol.217 (20), p.n/a

2020

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Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

IEEE journal of emerging and selected topics in power electronics, 2023-08, Vol.11 (4), p.3957-3982

2023

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Demonstration of a Three-Dimensionally Structured Betavoltaic

Journal of electronic materials, 2021-03, Vol.50 (3), p.1380-1385

2021

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p-i-n High-Speed Photodiodes for X-Ray and Infrared Imagers Fabricated by In Situ-Doped APCVD Germanium Homoepitaxy

IEEE transactions on electron devices, 2020-08, Vol.67 (8), p.1-7

2020

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Hall Effect Characterization of α‐Irradiated p‐Type 4H‐SiC

physica status solidi (b), 2021-03, Vol.258 (3), p.n/a

2021

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Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System

Journal of electronic materials, 2022, Vol.51 (1), p.350-355

2022

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Smooth Bosch Etch for Improved Si Diodes

IEEE electron device letters, 2013-10, Vol.34 (10), p.1226-1228

2013

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Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma

Materials research letters, 2021-02, Vol.9 (2), p.105-111

2021

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Design considerations for gallium arsenide pulse compression photoconductive switch

Journal of applied physics, 2022-04, Vol.131 (13)

2022

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Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2021-09, Vol.39 (5)

2021

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ICP etching of GaN microstructures in a Cl2–Ar plasma with subnanometer-scale sidewall surface roughness

Materials science in semiconductor processing, 2022-06, Vol.144, p.106564, Article 106564

2022

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Ultradeep electron cyclotron resonance plasma etching of GaN

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-11, Vol.35 (6)

2017

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Melt-grown semi-insulating Mn:β-Ga2O3 single crystals exhibiting unique visible absorptions and luminescence

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2024-01, Vol.42 (1)

2024

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Melt-grown semi-insulating Mn:β-Ga2O3 single crystals exhibiting unique visible absorptions and luminescence

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-12, Vol.42 (1)

2023

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Hall Effect Characterization of α ‐Irradiated p‐Type 4H‐SiC

Physica Status Solidi B. Basic Solid State Physics, 2020-11, Vol.258 (3)

2020

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Extrinsic Absorption Pathways in Vanadium‐Doped SiC Measured Using a Total Internal Reflection Geometry

Physica status solidi. A, Applications and materials science, 2020-10, Vol.217 (20), p.n/a

2020

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Maskless random antireflective nanotexturing of single crystal SiC

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2019-07, Vol.37 (4)

2019

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Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System

Journal of electronic materials, 2021-11, Vol.51

2021

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Design and Simulation of Near-Terahertz GaN Photoconductive Switches-Operation in the Negative Differential Mobility Regime and Pulse Compression

Design considerations for three-dimensional betavoltaics

Simulating charged defects at database scale

Performance Modeling of Silicon Carbide Photoconductive Switches for High-Power and High-Frequency Applications

Photoconductive Switch With High Sub-Bandgap Responsivity in Nitrogen-Doped Diamond

Design considerations for gallium arsenide pulse compression photoconductive switch

A Total Internal Reflection Photoconductive Switch

Extrinsic Absorption Pathways in Vanadium‐Doped SiC Measured Using a Total Internal Reflection Geometry

Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

Demonstration of a Three-Dimensionally Structured Betavoltaic

p-i-n High-Speed Photodiodes for X-Ray and Infrared Imagers Fabricated by In Situ-Doped APCVD Germanium Homoepitaxy

Hall Effect Characterization of α‐Irradiated p‐Type 4H‐SiC

Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System

Smooth Bosch Etch for Improved Si Diodes

Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma

Design considerations for gallium arsenide pulse compression photoconductive switch

Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching

ICP etching of GaN microstructures in a Cl2–Ar plasma with subnanometer-scale sidewall surface roughness

Ultradeep electron cyclotron resonance plasma etching of GaN

Melt-grown semi-insulating Mn:β-Ga2O3 single crystals exhibiting unique visible absorptions and luminescence

Melt-grown semi-insulating Mn:β-Ga2O3 single crystals exhibiting unique visible absorptions and luminescence

Hall Effect Characterization of α ‐Irradiated p‐Type 4H‐SiC

Extrinsic Absorption Pathways in Vanadium‐Doped SiC Measured Using a Total Internal Reflection Geometry

Maskless random antireflective nanotexturing of single crystal SiC

Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System

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