UB Paderborn / Katalog / Suche / in CDI

The single-mode condition for semiconductor rib waveguides with large cross section

Journal of lightwave technology, 1998-10, Vol.16 (10), p.1851-1853

1998

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Effects of grating heights on highly efficient unibond SOI waveguide grating couplers

IEEE photonics technology letters, 2000-01, Vol.12 (1), p.59-61

2000

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Highly efficient unibond silicon-on-insulator blazed grating couplers

Applied physics letters, 2000-12, Vol.77 (25), p.4214-4216

2000

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Numerical simulation of a silicon-on-insulator waveguide structure for phase modulation at 1.3 μm

Journal of lightwave technology, 1999, Vol.17 (1), p.129-135

1999

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Low-loss optical waveguide on standard SOI/SIMOX substrate

Optics communications, 1998-01, Vol.146 (1), p.31-33

1998

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High-confinement SiGe low-loss waveguides for Si-based optoelectronics

Applied physics letters, 1999-09, Vol.75 (10), p.1440-1442

1999

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Room temperature photocurrent spectroscopy of SiGe/Si p-i-n photodiodes grown by selective epitaxy

IEEE transactions on electron devices, 1998-02, Vol.45 (2), p.538-542

1998

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Technique for widening passband of wavelength router

Electronics letters, 2003-07, Vol.39 (15), p.1119

2003

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Modulation doped SiGe-Si MQW for low-voltage high-speed modulators at 1.3 μm

IEEE journal of selected topics in quantum electronics, 1998-11, Vol.4 (6), p.1011-1019

1998

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Numerical simulation of a silicon-on-insulator waveguide Fabry-Perot interferometer for intensity light modulators at 1.3 μm

Journal of lightwave technology, 1997-11, Vol.15 (11), p.2124-2129

1997

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0.15 dB/cm loss in Unibond SOI waveguides

Electronics letters, 1999-01, Vol.35 (12), p.977-978

1999

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Study of leaky waves: Application to hollow waveguides, to arrow waveguides and to the SiGe LEDs

Journal of modern optics, 2000-04, Vol.47 (5), p.917-930

2000

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Technique for widening passband of wavelength router

Electronics letters, 2003-07, Vol.39 (15), p.1-1

2003

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Numerical simulation of a silicon-on-insulator waveguide structure for phase modulation at 1.3 /spl mu/m

Journal of lightwave technology, 1999-01, Vol.17 (1), p.129-135

1999

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Numerical simulation of a silicon-on-insulator waveguide structure for phase modulation at 1.3 [micro]m

Journal of lightwave technology, 1999-01, Vol.17 (1), p.129

1999

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Numerical simulation of a silicon-on-insulator waveguide structure for phase modulation at 1.3 mum

Journal of lightwave technology, 1999-01, Vol.17 (1), p.129-135

1999

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Modulation doped SiGe-Si MQW for low-voltage high-speed modulators at 1.3 /spl mu/m

IEEE journal of selected topics in quantum electronics, 1998-11, Vol.4 (6), p.1011-1019

1998

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Modulation doped SiGe-Si MQW for low-voltage high-speed modulators at 1.3 mum

IEEE journal of selected topics in quantum electronics, 1998-11, Vol.4 (6), p.1011-1019

1998

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Semiconductor Analysis Using the CuPc/p-Si and PTCDI/p-Si Organic-on-Inorganic Contact Barriers

Physica status solidi. A, Applied research, 1991-04, Vol.124 (2), p.583-593

1991

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β-SiC-on insulator waveguide structures for modulators and sensor systems

Materials science in semiconductor processing, 2000-10, Vol.3 (5), p.367-374

2000

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Numerical simulation of a silicon-on-insulator waveguide Fabry-Perot interferometer for intensity light modulators at 1.3 /spl mu/m

Journal of lightwave technology, 1997-11, Vol.15 (11), p.2124-2129

1997

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Numerical simulation of a silicon-on-insulator waveguideFabry-Perot interferometer for intensity light modulators at 1.3 mu m

Journal of lightwave technology, 1997-11, Vol.15 (11), p.2124-2129

1997

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Study of leaky waves: application to hollow waveguides, to ARROW waveguides and to the SiGe LEDs

Journal of modern optics, 2000-04, Vol.47 (5), p.917-930

2000

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A new type of spatial light modulator at 1.3 μm on silicon-on-insulator substrate

Annales des télécommunications, 1997-11, Vol.52 (11-12), p.613-626

1997

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SiGe low loss waveguides for 1.3 /spl mu/m grown by selective epitaxy

58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526), 2000, p.49-50

2000

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The single-mode condition for semiconductor rib waveguides with large cross section

Effects of grating heights on highly efficient unibond SOI waveguide grating couplers

Highly efficient unibond silicon-on-insulator blazed grating couplers

Numerical simulation of a silicon-on-insulator waveguide structure for phase modulation at 1.3 μm

Low-loss optical waveguide on standard SOI/SIMOX substrate

High-confinement SiGe low-loss waveguides for Si-based optoelectronics

Room temperature photocurrent spectroscopy of SiGe/Si p-i-n photodiodes grown by selective epitaxy

Technique for widening passband of wavelength router

Modulation doped SiGe-Si MQW for low-voltage high-speed modulators at 1.3 μm

Numerical simulation of a silicon-on-insulator waveguide Fabry-Perot interferometer for intensity light modulators at 1.3 μm

0.15 dB/cm loss in Unibond SOI waveguides

Study of leaky waves: Application to hollow waveguides, to arrow waveguides and to the SiGe LEDs

Technique for widening passband of wavelength router

Numerical simulation of a silicon-on-insulator waveguide structure for phase modulation at 1.3 /spl mu/m

Numerical simulation of a silicon-on-insulator waveguide structure for phase modulation at 1.3 [micro]m

Numerical simulation of a silicon-on-insulator waveguide structure for phase modulation at 1.3 mum

Modulation doped SiGe-Si MQW for low-voltage high-speed modulators at 1.3 /spl mu/m

Modulation doped SiGe-Si MQW for low-voltage high-speed modulators at 1.3 mum

Semiconductor Analysis Using the CuPc/p-Si and PTCDI/p-Si Organic-on-Inorganic Contact Barriers

β-SiC-on insulator waveguide structures for modulators and sensor systems

Numerical simulation of a silicon-on-insulator waveguide Fabry-Perot interferometer for intensity light modulators at 1.3 /spl mu/m

Numerical simulation of a silicon-on-insulator waveguideFabry-Perot interferometer for intensity light modulators at 1.3 mu m

Study of leaky waves: application to hollow waveguides, to ARROW waveguides and to the SiGe LEDs

A new type of spatial light modulator at 1.3 μm on silicon-on-insulator substrate

SiGe low loss waveguides for 1.3 /spl mu/m grown by selective epitaxy

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