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Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. I. Plasma source and critical fluxes

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-03, Vol.38 (2)

2020

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Insights to scaling remote plasma sources sustained in NF3 mixtures

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-05, Vol.35 (3)

2017

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Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF3/O2 mixtures

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2018-03, Vol.36 (2)

2018

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Experimental study of plasma non-uniformities and the effect of phase-shift control in a very high frequency capacitive discharge

Journal of physics. D, Applied physics, 2010-03, Vol.43 (8), p.085203-085203

2010

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Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. II. Surface reaction mechanism

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-03, Vol.38 (2)

2020

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Role of NO in highly selective SiN/SiO2 and SiN/Si etching with NF3/O2 remote plasma: Experiment and simulation

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-11, Vol.35 (6)

2017

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Effect on plasma and etch-rate uniformity of controlled phase shift between rf voltages applied to powered electrodes in a triode capacitively coupled plasma reactor

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2009-01, Vol.27 (1), p.13-19

2009

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Enhanced silicon nitride etching in the presence of F atoms: Quantum chemistry simulation

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2018-11, Vol.36 (6)

2018

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Highly selective Si 3 N 4 /SiO 2 etching using an NF 3 /N 2 /O 2 /H 2 remote plasma. II. Surface reaction mechanism

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-01, Vol.38 (2)

2020

Volltextzugriff (PDF)

Highly selective Si 3 N 4 /SiO 2 etching using an NF 3 /N 2 /O 2 /H 2 remote plasma. I. Plasma source and critical fluxes

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-01, Vol.38 (2)

2020

Volltextzugriff (PDF)

Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF 3 /O 2 mixtures

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2018-03, Vol.36 (2)

2018

Volltextzugriff (PDF)

Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF 3 /O 2 mixtures

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2018-03, Vol.36 (2)

2018

Volltextzugriff (PDF)

Insights to scaling remote plasma sources sustained in NF 3 mixtures

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-05, Vol.35 (3)

2017

Volltextzugriff (PDF)

Insights to scaling remote plasma sources sustained in NF 3 mixtures

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-05, Vol.35 (3)

2017

Volltextzugriff (PDF)

Frequency and electrode shape effects on etch rate uniformity in a dual-frequency capacitive reactor

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2012-11, Vol.30 (6)

2012

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Plasma uniformity and phase-controlled etching in a very high frequency capacitive discharge

Journal of applied physics, 2009-07, Vol.106 (2), p.023303-023303-5

2009

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Study of fluorocarbon plasma in 60 and 100 MHz capacitively coupled discharges using mass spectrometry

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2008-09, Vol.26 (5), p.1198-1207

2008

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Study of fluorocarbon plasma in 60 and 100MHz capacitively coupled discharges using mass spectrometry

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2008-09, Vol.26 (5), p.1198-1207

2008

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Optimizing remote plasma sources for selective etching

2016 IEEE International Conference on Plasma Science (ICOPS), 2016, p.1-1

2016

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Deciphering mantle source heterogeneity in space and time in the back-arc of a contemporary subduction system: A regional study of the Sredinny Range, Kamchatka

Lithos, 2024-07, Vol.476-477, p.107605, Article 107605

2024

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Geochemical diversity and tectonic relationships in monogenetic volcanic fields: A case study of the Sredinny Range, Kamchatka

Lithos, 2023-11, Vol.456-457, p.107306, Article 107306

2023

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Selective SiN/SiO2 etching by SF6/H2/Ar/He plasma

AIP Conference Proceedings, 2019, Vol.2179 (1)

2019

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International affairs

The Current digest of the post-Soviet press, 1996-02, Vol.48 (4), p.20

1996

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Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. I. Plasma source and critical fluxes

Insights to scaling remote plasma sources sustained in NF3 mixtures

Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF3/O2 mixtures

Experimental study of plasma non-uniformities and the effect of phase-shift control in a very high frequency capacitive discharge

Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. II. Surface reaction mechanism

Role of NO in highly selective SiN/SiO2 and SiN/Si etching with NF3/O2 remote plasma: Experiment and simulation

Effect on plasma and etch-rate uniformity of controlled phase shift between rf voltages applied to powered electrodes in a triode capacitively coupled plasma reactor

Enhanced silicon nitride etching in the presence of F atoms: Quantum chemistry simulation

Highly selective Si 3 N 4 /SiO 2 etching using an NF 3 /N 2 /O 2 /H 2 remote plasma. II. Surface reaction mechanism

Highly selective Si 3 N 4 /SiO 2 etching using an NF 3 /N 2 /O 2 /H 2 remote plasma. I. Plasma source and critical fluxes

Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF 3 /O 2 mixtures

Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF 3 /O 2 mixtures

Insights to scaling remote plasma sources sustained in NF 3 mixtures

Insights to scaling remote plasma sources sustained in NF 3 mixtures

Frequency and electrode shape effects on etch rate uniformity in a dual-frequency capacitive reactor

Plasma uniformity and phase-controlled etching in a very high frequency capacitive discharge

Study of fluorocarbon plasma in 60 and 100 MHz capacitively coupled discharges using mass spectrometry

Study of fluorocarbon plasma in 60 and 100MHz capacitively coupled discharges using mass spectrometry

Optimizing remote plasma sources for selective etching

Deciphering mantle source heterogeneity in space and time in the back-arc of a contemporary subduction system: A regional study of the Sredinny Range, Kamchatka

Geochemical diversity and tectonic relationships in monogenetic volcanic fields: A case study of the Sredinny Range, Kamchatka

Selective SiN/SiO2 etching by SF6/H2/Ar/He plasma

International affairs

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