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A Resonant Global Clock Distribution for the Cell Broadband Engine Processor

IEEE journal of solid-state circuits, 2009-01, Vol.44 (1), p.64-72

2009

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IEEE_Xplore

Product applications and technology directions with SiGe BiCMOS

IEEE journal of solid-state circuits, 2003-09, Vol.38 (9), p.1471-1478

2003

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IEEE_Xplore

Microwave transformers, inductors and transmission lines implemented in an Si/SiGe HBT process

IEEE transactions on microwave theory and techniques, 2001-08, Vol.49 (8), p.1507-1510

2001

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IEEE_Xplore

Prospects of silicon-germanium-based technology for very high-speed circuits

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017), 2000, Vol.1, p.361-364 vol.1

2000

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IEEE_Xplore

Advanced passive devices for enhanced integrated RF circuit performance

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), 2002, Vol.1, p.187-191 vol.1

2002

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IEEE_Xplore

Advanced passive devices for enhanced integrated RF circuit performance

2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280), 2002, p.341-344

2002

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IEEE_Xplore

Lateral microwave transformers and inductors implemented in a Si/SiGe HBT process

1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282), 1999, Vol.3, p.855-858 vol.3

1999

Link zum Volltext
IEEE_Xplore

Using silicon-germanium mainstream BiCMOS technology for X-band and LMDS (25-30 GHz) microwave applications

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), 2002, Vol.1, p.401-404 vol.1

2002

Link zum Volltext
IEEE_Xplore

Fabrication of high frequency passives on BiCMOS silicon substrates

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017), 2000, Vol.1, p.209-212 vol.1

2000

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IEEE_Xplore

Copper through silicon via (TSV) for 3D integration

2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.2B.1.1-2B.1.4

2012

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IEEE_Xplore

Low-loss microwave transmission lines and inductors implemented in a Si/SiGe HBT process

Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198), 1998, p.101-104

1998

Link zum Volltext
IEEE_Xplore

3D copper TSV integration, testing and reliability

2011 International Electron Devices Meeting, 2011, p.7.1.1-7.1.4

2011

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IEEE_Xplore

Differentially-shielded monolithic inductors

Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003, 2003, p.95-98

2003

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IEEE_Xplore

On-chip interconnect for mm-wave applications using an all-copper technology and wavelength reduction

2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC, 2003, p.396-501 vol.1

2003

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IEEE_Xplore

50–200 GHz Silicon–Germanium Heterojunction Bipolar Transistor BICMOS Technology and a Computer-Aided Design Environment for 2–50+ GHz Very Large-Scale Integration Mixed-Signal ICs

Japanese Journal of Applied Physics, 2002-02, Vol.41 (Part 1, No. 2B), p.1111-1123

2002

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Product applications and technology directions with SiGe BiCMOS

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu, 2002, p.135-138

2002

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IEEE_Xplore

High Q inductors in a SiGe BiMOS process utilizing a thick metal process add-on module

Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024), 1999, p.149-152

1999

Link zum Volltext
IEEE_Xplore

Selective nickel and gold plating for enhanced wire bonding technology

56th Electronic Components and Technology Conference 2006, 2006, p.7 pp.

2006

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IEEE_Xplore

The emerging role of SiGe BiCMOS technology in wired and wireless communications

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611), 2002, p.D052-D052

2002

Link zum Volltext
IEEE_Xplore

A 0.18 /spl mu/m 90 GHz f/sub T/ SiGe HBT BiCMOS, ASIC-compatible, copper interconnect technology for RF and microwave applications

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), 1999, p.569-572

1999

Link zum Volltext
IEEE_Xplore

Demonstration of the mass-producible feature of a Cs vapor microcell technology for miniature atomic clocks

Sensors and actuators. A. Physical., 2018-09, Vol.280, p.99-106

2018

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SiGe HBTs with cut-off frequency of 350GHz

2002

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SiGe HBTs with cut-off frequency of 350 GHz

Digest. International Electron Devices Meeting, 2002, p.771-774

2002

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IEEE_Xplore

Cryptococcus neoformans resists to drastic conditions by switching to viable but non-culturable cell phenotype

PLoS pathogens, 2019-07, Vol.15 (7), p.e1007945-e1007945

2019

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Dynamic microfluidic single-cell screening identifies pheno-tuning compounds to potentiate tuberculosis therapy

Nature communications, 2024-05, Vol.15 (1), p.4175-4175, Article 4175

2024

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A Resonant Global Clock Distribution for the Cell Broadband Engine Processor

Product applications and technology directions with SiGe BiCMOS

Microwave transformers, inductors and transmission lines implemented in an Si/SiGe HBT process

Prospects of silicon-germanium-based technology for very high-speed circuits

Advanced passive devices for enhanced integrated RF circuit performance

Advanced passive devices for enhanced integrated RF circuit performance

Lateral microwave transformers and inductors implemented in a Si/SiGe HBT process

Using silicon-germanium mainstream BiCMOS technology for X-band and LMDS (25-30 GHz) microwave applications

Fabrication of high frequency passives on BiCMOS silicon substrates

Copper through silicon via (TSV) for 3D integration

Low-loss microwave transmission lines and inductors implemented in a Si/SiGe HBT process

3D copper TSV integration, testing and reliability

Differentially-shielded monolithic inductors

On-chip interconnect for mm-wave applications using an all-copper technology and wavelength reduction

50–200 GHz Silicon–Germanium Heterojunction Bipolar Transistor BICMOS Technology and a Computer-Aided Design Environment for 2–50+ GHz Very Large-Scale Integration Mixed-Signal ICs

Product applications and technology directions with SiGe BiCMOS

High Q inductors in a SiGe BiMOS process utilizing a thick metal process add-on module

Selective nickel and gold plating for enhanced wire bonding technology

The emerging role of SiGe BiCMOS technology in wired and wireless communications

A 0.18 /spl mu/m 90 GHz f/sub T/ SiGe HBT BiCMOS, ASIC-compatible, copper interconnect technology for RF and microwave applications

Demonstration of the mass-producible feature of a Cs vapor microcell technology for miniature atomic clocks

SiGe HBTs with cut-off frequency of 350GHz

SiGe HBTs with cut-off frequency of 350 GHz

Cryptococcus neoformans resists to drastic conditions by switching to viable but non-culturable cell phenotype

Dynamic microfluidic single-cell screening identifies pheno-tuning compounds to potentiate tuberculosis therapy

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