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Undoped GaAs grown by the vertical gradient freeze method: growth and properties

Materials science & engineering. B, Solid-state materials for advanced technology, 1994-12, Vol.28 (1), p.87-90

1994

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Intensities of overlapping peaks in X-ray powder diffraction

Kristall und Technik, 1981, Vol.16 (10), p.1197-1204

1981

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X-ray diffraction studies of interdiffusion in InPGaP powder blends

Crystal research and technology (1979), 1989-11, Vol.24 (11), p.1177-1185

1989

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Estimation of the Debye temperature of diamond-like semiconducting compounds by means of the Lindemann rule

Kristall und Technik, 1981, Vol.16 (8), p.941-948

1981

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Low-temperature thermal expansion of ZnSiAs2

Physica status solidi. A, Applied research, 1988-07, Vol.108 (1), p.225-231

1988

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X-ray diffraction studies of interdiffusion in InAs-GaAs powder blends

Crystal research and technology (1979), 1988-03, Vol.23 (3), p.369-378

1988

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Thermal expansion of GaP within 20 to 300 K

Physica status solidi. A, Applied research, 1983-11, Vol.80 (1), p.K29-K32

1983

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Low Temperature Thermal Expansion of InP

Physica status solidi. A, Applied research, 1987-10, Vol.103 (2), p.443-447

1987

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Purification of ZnSiP2 and ZnSiAs2 by sublimation in a hermetically sealed system

Crystal research and technology (1979), 1982, Vol.17 (2), p.147-151

1982

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X-ray determination of mean square amplitudes of lattice oscillations in ZnSiP2

Kristall und Technik, 1981, Vol.16 (8), p.937-940

1981

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X-ray determination of mean square amplitudes of lattice oscillations in compounds with ZnS structure

Kristall und Technik, 1980, Vol.15 (12), p.1393-1397

1980

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Debye temperature of polycrystalline silicon

Physica status solidi. A, Applied research, 1976-08, Vol.36 (2), p.K165-K169

1976

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Low-temperature thermal expansion of ZnSiAs2

Physica status solidi. A, Applied research, 1988-07, Vol.108 (1), p.225-231

1988

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Thermal expansion of GaP within 20 to 300 K

Physica status solidi. A, Applied research, 1983-11, Vol.80 (1), p.K29-K32

1983

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Low Temperature Thermal Expansion of InP

Physica status solidi. A, Applied research, 1987-10, Vol.103 (2), p.443-447

1987

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X-Ray Diffraction Studies of Interdiffusion in InP-GaP Powder Blends

Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 1990-01, Vol.66-69, p.1513-1518

1990

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Purification of ZnSiP sub 2 and ZnSiAs sub 2 by Sublimation in a Hermetically Sealed System

Crystal research and technology (1979), 1982-01, Vol.17 (2), p.173-180

1982

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Purification of ZnSiP 2 and ZnSiAs 2 by sublimation in a hermetically sealed system

Crystal research and technology (1979), 1982-01, Vol.17 (2), p.147-151

1982

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Debye Temperature of Polycrystalline Si

Physica status solidi. A, Applied research, 1976-08, Vol.36 (2), p.K165-K169

1976

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X‐ray determination of mean square amplitudes of lattice oscillations in ZnSiP 2

Kristall und Technik, 1981-01, Vol.16 (8), p.937-940

1981

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cDNA cloning and characterization of a novel 16 kDa protein located in zymogen granules of rat pancreas and goblet cells of the gut

European journal of cell biology, 1994-12, Vol.65 (2), p.366-377

1994

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Menschliche Reproduktion aus verhaltensökologischer Perspektive

Handbuch der Demographie 1, 2000, p.387-437

2000

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Undoped GaAs grown by the vertical gradient freeze method: growth and properties

Intensities of overlapping peaks in X-ray powder diffraction

X-ray diffraction studies of interdiffusion in InPGaP powder blends

Estimation of the Debye temperature of diamond-like semiconducting compounds by means of the Lindemann rule

Low-temperature thermal expansion of ZnSiAs2

X-ray diffraction studies of interdiffusion in InAs-GaAs powder blends

Thermal expansion of GaP within 20 to 300 K

Low Temperature Thermal Expansion of InP

Purification of ZnSiP2 and ZnSiAs2 by sublimation in a hermetically sealed system

X-ray determination of mean square amplitudes of lattice oscillations in ZnSiP2

X-ray determination of mean square amplitudes of lattice oscillations in compounds with ZnS structure

Debye temperature of polycrystalline silicon

Low-temperature thermal expansion of ZnSiAs2

Thermal expansion of GaP within 20 to 300 K

Low Temperature Thermal Expansion of InP

X-Ray Diffraction Studies of Interdiffusion in InP-GaP Powder Blends

Purification of ZnSiP sub 2 and ZnSiAs sub 2 by Sublimation in a Hermetically Sealed System

Purification of ZnSiP 2 and ZnSiAs 2 by sublimation in a hermetically sealed system

Debye Temperature of Polycrystalline Si

X‐ray determination of mean square amplitudes of lattice oscillations in ZnSiP 2

cDNA cloning and characterization of a novel 16 kDa protein located in zymogen granules of rat pancreas and goblet cells of the gut

Menschliche Reproduktion aus verhaltensökologischer Perspektive

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