UB Paderborn / Katalog / Suche / in CDI

Effects of silicone coating degradation on GaN MQW LEDs performances using physical and chemical analyses

Microelectronics and reliability, 2010-09, Vol.50 (9), p.1568-1573

2010

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Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer

Microelectronics and reliability, 2001-07, Vol.41 (7), p.981-985

2001

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Fractal analysis of atomic force microscopy pictures of slip lines on a GaAs/GaAlAs heterostructure plastically deformed to obtain quantum wires

Journal of applied physics, 1996-06, Vol.79 (11), p.8298-8303

1996

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Atomic scale saw by dislocation slipping: A new method to generate one-dimensional structure

Applied physics letters, 1992-05, Vol.60 (20), p.2481-2483

1992

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Analysis of the donor-acceptor recombination band in the photoluminescence spectra of CuInSe2

Materials letters, 1996-11, Vol.29 (1-3), p.87-90

1996

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Effects of silicon coating degradation on GaN MQW LEDs performances using physical and chemical analyses

Microelectronics and reliability, 2010-11, Vol.50 (9-11), p.1568-1573

2010

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Synthesis and growth of large stoichiometric single crystals of copper indium diselenide by horizontal varying gradient zone freeze technique

Journal of crystal growth, 1996, Vol.158 (1), p.97-102

1996

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Photoluminescence in p-type CuInSe2 single crystals

The Journal of physics and chemistry of solids, 1998, Vol.59 (2), p.245-252

1998

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Short communication: On the use of a O2:SF6 plasma treatment on GaAs processed surfaces for molecular beam epitaxial regrowth

Applied surface science, 2009-01, Vol.255 (6), p.3897-3901

2009

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On the use of a O2:SF6 plasma treatment on GaAs processed surfaces for molecular beam epitaxial regrowth

Applied surface science, 2009-01, Vol.255 (6), p.3897-3901

2009

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Characterization of hydrogenated GaAs/AlGaAs multiple quantum well structures

Journal of applied physics, 1993-06, Vol.73 (12), p.8489-8494

1993

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Dimensional Reduction of GaAs Quantum Well Cut by Dislocation Slip Observed by Photoluminescence

Europhysics letters, 1993-09, Vol.23 (9), p.647-652

1993

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Alternate method to produce quantum wires using dislocation slipping

Solid-state electronics, 1994-04, Vol.37 (4), p.567-569

1994

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Photoluminescence and reflection high-energy electron diffraction dynamics study of the interfaces in molecular beam epitaxially grown GaAs/Al0.33Ga0.67As(100) single quantum wells

Applied physics letters, 1987-03, Vol.50 (12), p.739-741

1987

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Transmission electron microscopy in situ investigation of dislocation mobilities in inp

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 1992-01, Vol.65 (1), p.195-206

1992

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A combined computer simulation, RHEED intensity dynamics and photoluminescence study of the surface kinetics controlled interface formation in MBE grown GaAs/AlxGa1−xAs(100) quantum well structures

Journal of crystal growth, 1987-02, Vol.81 (1-4), p.26-33

1987

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Observation of phonon modes through resonant mixing with electronic states in the secondary-emission spectra of a GaAs/Al0.32Ga0.68As single quantum well

Physical review letters, 1987-09, Vol.59 (12), p.1313-1316

1987

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Growth kinetics of molecular beam epitaxially grown GaAs/Al0.3Ga0.7As (100) normal and inverted interfaces in thin single quantum well structures examined via photoluminescence studies

Applied physics letters, 1987-01, Vol.50 (4), p.194-196

1987

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The “trigonal chromium” in GaAs: A new no-phonon luminescence spectroscopy at 0.84 eV

Solid state communications, 1982-10, Vol.44 (3), p.395-399

1982

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The no-phonon luminescence at 0.84 eV in GaAs : Cr

Journal of luminescence, 1981-01, Vol.24, p.265-268

1981

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Atomistic nature of heterointerfaces in III-V semiconductor-based quantum-well structures and its consequences for photoluminescence behavior

Physical review. B, Condensed matter, 1987-07, Vol.36 (3), p.1662-1672

1987

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Controlled dislocation slipping: an original method to create multiple quantum wire structures

Superlattices and microstructures, 1997-01, Vol.22 (1), p.35-41

1997

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New design of a decelerator module for ultra low energy implantation

2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432), 2000, p.384-387

2000

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IEEE_Xplore

Exciton dynamics in GaAs-AlxGa1-xAs quantum wells by picosecond time resolved photoluminescence spectroscopy

Superlattices and microstructures, 1989, Vol.6 (3), p.323-328

1989

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The zero-phonon luminescence from gold in silicon

Solid state communications, 1983-01, Vol.45 (7), p.645-647

1983

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Effects of silicone coating degradation on GaN MQW LEDs performances using physical and chemical analyses

Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer

Fractal analysis of atomic force microscopy pictures of slip lines on a GaAs/GaAlAs heterostructure plastically deformed to obtain quantum wires

Atomic scale saw by dislocation slipping: A new method to generate one-dimensional structure

Analysis of the donor-acceptor recombination band in the photoluminescence spectra of CuInSe2

Effects of silicon coating degradation on GaN MQW LEDs performances using physical and chemical analyses

Synthesis and growth of large stoichiometric single crystals of copper indium diselenide by horizontal varying gradient zone freeze technique

Photoluminescence in p-type CuInSe2 single crystals

Short communication: On the use of a O2:SF6 plasma treatment on GaAs processed surfaces for molecular beam epitaxial regrowth

On the use of a O2:SF6 plasma treatment on GaAs processed surfaces for molecular beam epitaxial regrowth

Characterization of hydrogenated GaAs/AlGaAs multiple quantum well structures

Dimensional Reduction of GaAs Quantum Well Cut by Dislocation Slip Observed by Photoluminescence

Alternate method to produce quantum wires using dislocation slipping

Photoluminescence and reflection high-energy electron diffraction dynamics study of the interfaces in molecular beam epitaxially grown GaAs/Al0.33Ga0.67As(100) single quantum wells

Transmission electron microscopy in situ investigation of dislocation mobilities in inp

A combined computer simulation, RHEED intensity dynamics and photoluminescence study of the surface kinetics controlled interface formation in MBE grown GaAs/AlxGa1−xAs(100) quantum well structures

Observation of phonon modes through resonant mixing with electronic states in the secondary-emission spectra of a GaAs/Al0.32Ga0.68As single quantum well

Growth kinetics of molecular beam epitaxially grown GaAs/Al0.3Ga0.7As (100) normal and inverted interfaces in thin single quantum well structures examined via photoluminescence studies

The “trigonal chromium” in GaAs: A new no-phonon luminescence spectroscopy at 0.84 eV

The no-phonon luminescence at 0.84 eV in GaAs : Cr

Atomistic nature of heterointerfaces in III-V semiconductor-based quantum-well structures and its consequences for photoluminescence behavior

Controlled dislocation slipping: an original method to create multiple quantum wire structures

New design of a decelerator module for ultra low energy implantation

Exciton dynamics in GaAs-AlxGa1-xAs quantum wells by picosecond time resolved photoluminescence spectroscopy

The zero-phonon luminescence from gold in silicon

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