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Changes in Inpatient and Day Patient Treatment during the COVID-19 Pandemic: Insights and Outlook Results of a Study in an Adult Psychiatry Clinic in Germany

European psychiatry, 2022-06, Vol.65 (S1), p.S497-S497

2022

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Etched graphene quantum dots on hexagonal boron nitride

Applied physics letters, 2013-08, Vol.103 (7)

2013

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Si(111) strained layers on Ge(111): Evidence for c ( 2 × 4 ) domains

Physical review. B, 2017-08, Vol.96 (8), Article 085401

2017

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Scanning tunneling spectroscopy and manipulation of C60 on Cu(111)

Applied physics. A, Materials science & processing, 2007-03, Vol.87 (3), p.475-478

2007

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Direct observation of subcritical fluctuations during the formation of strained semiconductor islands

Physical review letters, 2000-01, Vol.84 (2), p.330-333

2000

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Dislocation networks in conventional and surfactant-mediated Ge/Si(1 1 1) epitaxy

Surface science, 2005-12, Vol.599 (1), p.76-84

2005

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On the microscopic origin of the kinetic step bunching instability on vicinal Si( [formula omitted])

Surface science, 2002-12, Vol.520 (3), p.193-206

2002

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Influence of surfactants on the growth-kinetics of Si on Si(111)

Surface science, 1993-07, Vol.292 (1), p.L775-L780

1993

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Formation of Si/Ge nanostructures at surfaces by self-organization

Journal of physics. Condensed matter, 2004-05, Vol.16 (17), p.S1535-S1551

2004

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Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties

Semiconductors (Woodbury, N.Y.), 2000-01, Vol.34 (11), p.1229-1247

2000

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Structure of steps on As-passivated Si(111): Ab initio calculations and scanning tunneling microscopy

Physical review. B, Condensed matter and materials physics, 2006-03, Vol.73 (12), Article 125327

2006

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“Rotating” steps in Si(0 0 1) homoepitaxy

ENR, 2004-01, Vol.549 (1), p.31-36

2004

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Nucleation and growth of CoSi2 on Si(100) studied by scanning tunneling microscopy

Surface science, 1997-02, Vol.372 (1-3), p.71-82

1997

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Fabrication of Si/Ge nanoring structures by MBE

Thin solid films, 2004-10, Vol.464 (Complete), p.185-189

2004

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Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth

Surface science reports, 2001-01, Vol.43 (5), p.127-254

Voigtländer, Bert

2001

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Kinetically Self-Limiting Growth of Ge Islands on Si(001)

Physical review letters, 1999-03, Vol.82 (13), p.2745-2748

1999

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On the origin of the kinetic growth instability of homoepitaxy on Si(001)

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1), p.410-414

2002

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Influence of strain on binding energies of Si atoms at Ge( [formula omitted]) surfaces

Surface science, 2002-06, Vol.512 (1), p.L335-L340

2002

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Strain-induced surface structures on Sb-covered Ge(111): Epitaxial Ge films on Si(111):Sb

Europhysics letters, 2003-05, Vol.62 (4), p.547-553

2003

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Simultaneous molecular beam epitaxy growth and scanning tunneling microscopy imaging during Ge/Si epitaxy

Applied physics letters, 1993-11, Vol.63 (22), p.3055-3057

1993

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Element specific surface reconstructions of islands during surfactant-mediated growth on Si (111)

Physical review letters, 2002-12, Vol.89 (23), p.236101-236101, Article 236101

2002

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Artifacts in AFM

Atomic Force Microscopy, 2019, p.137-147

Voigtländer, Bert

2019

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Work Function, Contact Potential, and Kelvin Probe AFM

Atomic Force Microscopy, 2019, p.149-159

Voigtländer, Bert

2019

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Static Atomic Force Microscopy

Atomic Force Microscopy, 2019, p.199-208

Voigtländer, Bert

2019

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Ohmic contacts for GaAs based nanocolumns

Physica status solidi. A, Applications and materials science, 2006-11, Vol.203 (14), p.3559-3564

2006

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Changes in Inpatient and Day Patient Treatment during the COVID-19 Pandemic: Insights and Outlook Results of a Study in an Adult Psychiatry Clinic in Germany

Etched graphene quantum dots on hexagonal boron nitride

Si(111) strained layers on Ge(111): Evidence for c ( 2 × 4 ) domains

Scanning tunneling spectroscopy and manipulation of C60 on Cu(111)

Direct observation of subcritical fluctuations during the formation of strained semiconductor islands

Dislocation networks in conventional and surfactant-mediated Ge/Si(1 1 1) epitaxy

On the microscopic origin of the kinetic step bunching instability on vicinal Si( [formula omitted])

Influence of surfactants on the growth-kinetics of Si on Si(111)

Formation of Si/Ge nanostructures at surfaces by self-organization

Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties

Structure of steps on As-passivated Si(111): Ab initio calculations and scanning tunneling microscopy

“Rotating” steps in Si(0 0 1) homoepitaxy

Nucleation and growth of CoSi2 on Si(100) studied by scanning tunneling microscopy

Fabrication of Si/Ge nanoring structures by MBE

Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth

Kinetically Self-Limiting Growth of Ge Islands on Si(001)

On the origin of the kinetic growth instability of homoepitaxy on Si(001)

Influence of strain on binding energies of Si atoms at Ge( [formula omitted]) surfaces

Strain-induced surface structures on Sb-covered Ge(111): Epitaxial Ge films on Si(111):Sb

Simultaneous molecular beam epitaxy growth and scanning tunneling microscopy imaging during Ge/Si epitaxy

Element specific surface reconstructions of islands during surfactant-mediated growth on Si (111)

Artifacts in AFM

Work Function, Contact Potential, and Kelvin Probe AFM

Static Atomic Force Microscopy

Ohmic contacts for GaAs based nanocolumns

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