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Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption

Applied physics letters, 2016-02, Vol.108 (7)

2016

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The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy

Applied physics letters, 2015-02, Vol.106 (8)

2015

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Silicene, germanene and other group IV 2D materials

Beilstein journal of nanotechnology, 2018, Vol.9 (1), p.2665-2667

Vogt, Patrick

2018

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Metal-Exchange Catalysis in the Growth of Sesquioxides: Towards Heterostructures of Transparent Oxide Semiconductors

Physical review letters, 2017-11, Vol.119 (19), p.196001-196001, Article 196001

2017

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Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction

Applied physics letters, 2017-10, Vol.111 (16)

2017

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Silicene: Prediction, Synthesis, Application

1st ed. 2018., 2018

Volltextzugriff (PDF)

Evidence of Dirac fermions in multilayer silicene

Applied physics letters, 2013-04, Vol.102 (16)

2013

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Atomic structures of silicene layers grown on Ag(111): scanning tunneling microscopy and noncontact atomic force microscopy observations

Scientific reports, 2013, Vol.3 (1), p.2399, Article 2399

2013

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Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

Applied physics letters, 2010-10, Vol.97 (17), p.171105-171105-3

2010

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Kinetics versus thermodynamics of the metal incorporation in molecular beam epitaxy of (In x Ga1−x )2O3

APL materials, 2016-08, Vol.4 (8), p.086112-086112-6

2016

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Certificate-of-need laws and substance use treatment

Substance abuse treatment, prevention and policy, 2022-05, Vol.17 (1), p.38-38, Article 38

2022

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The quasiparticle band dispersion in epitaxial multilayer silicene

Journal of physics. Condensed matter, 2013-09, Vol.25 (38), p.382202-382202

2013

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The Metallic Nature of Epitaxial Silicene Monolayers on Ag(111)

Advanced functional materials, 2014-09, Vol.24 (33), p.5253-5259

2014

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Various atomic structures of monolayer silicene fabricated on Ag(111)

New journal of physics, 2014-07, Vol.16 (7), p.75006-9

2014

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Indium: A surfactant for the growth of ɛ/κ-Ga2O3 by molecular beam epitaxy

APL materials, 2023-09, Vol.11 (9), p.091114-091114-9

2023

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Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy

APL materials, 2021-03, Vol.9 (3), p.031101-031101-13

2021

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Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy

APL materials, 2024-01, Vol.12 (1), p.011120-011120-10

2024

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Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy

APL materials, 2023-11, Vol.11 (11), p.111113-111113-9

2023

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Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N

Journal of applied physics, 2017-09, Vol.122 (12)

2017

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Erratum: “Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)]

APL materials, 2024-01, Vol.12 (1), p.019902-019902-2

2024

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2D vibrational properties of epitaxial silicene on Ag(111)

2d materials, 2017-03, Vol.4 (1), p.15008-015008

2017

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Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes

Applied physics letters, 2011-12, Vol.99 (26), p.261105-261105-4

2011

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Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy

APL materials, 2023-04, Vol.11 (4), p.041102-041102-12

2023

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Optimization of Electrochemically Deposited Highly Doped ZnO Bilayers on Ga-Rich Chalcopyrite Selenide for Cost-Effective Photovoltaic Device Technology

Energies (Basel), 2016-11, Vol.9 (11), p.951-951

2016

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Comprehensive Raman study of epitaxial silicene-related phases on Ag(111)

Beilstein journal of nanotechnology, 2017, Vol.8 (1), p.1357-1365

2017

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Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption

The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy

Silicene, germanene and other group IV 2D materials

Metal-Exchange Catalysis in the Growth of Sesquioxides: Towards Heterostructures of Transparent Oxide Semiconductors

Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction

Silicene: Prediction, Synthesis, Application

Evidence of Dirac fermions in multilayer silicene

Atomic structures of silicene layers grown on Ag(111): scanning tunneling microscopy and noncontact atomic force microscopy observations

Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

Kinetics versus thermodynamics of the metal incorporation in molecular beam epitaxy of (In x Ga1−x )2O3

Certificate-of-need laws and substance use treatment

The quasiparticle band dispersion in epitaxial multilayer silicene

The Metallic Nature of Epitaxial Silicene Monolayers on Ag(111)

Various atomic structures of monolayer silicene fabricated on Ag(111)

Indium: A surfactant for the growth of ɛ/κ-Ga2O3 by molecular beam epitaxy

Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy

Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy

Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy

Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N

Erratum: “Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)]

2D vibrational properties of epitaxial silicene on Ag(111)

Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes

Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy

Optimization of Electrochemically Deposited Highly Doped ZnO Bilayers on Ga-Rich Chalcopyrite Selenide for Cost-Effective Photovoltaic Device Technology

Comprehensive Raman study of epitaxial silicene-related phases on Ag(111)

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