UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 182

Sortiert nach

Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions

Semiconductors (Woodbury, N.Y.), 2021-03, Vol.55 (3), p.289-295

2021

Volltextzugriff (PDF)

Superconducting state in a gallium-doped germanium layer at low temperatures

Physical review letters, 2009-05, Vol.102 (21), p.217003-217003, Article 217003

2009

Volltextzugriff (PDF)

Ex situ n+ doping of GeSn alloys via non-equilibrium processing

Semiconductor science and technology, 2018-06, Vol.33 (6), p.65008

2018

Volltextzugriff (PDF)

Silicon films with gallium-rich nanoinclusions: from superconductor to insulator

New journal of physics, 2013-08, Vol.15 (8), p.83022-15

2013

Volltextzugriff (PDF)

Diffusion and Interaction of In and As Implanted into SiO2 Films

Semiconductors (Woodbury, N.Y.), 2019-08, Vol.53 (8), p.1004-1010

2019

Volltextzugriff (PDF)

In situ ohmic contact formation for n-type Ge via non-equilibrium processing

Semiconductor science and technology, 2017-11, Vol.32 (11), p.115006

2017

Volltextzugriff (PDF)

High-fluence Ga-implanted silicon—The effect of annealing and cover layers

Journal of applied physics, 2014-07, Vol.116 (2)

2014

Volltextzugriff (PDF)

Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots

JETP letters, 2019-02, Vol.109 (4), p.270-275

2019

Volltextzugriff (PDF)

Modelling of flash-lamp-induced crystallization of amorphous silicon thin films on glass

Journal of crystal growth, 2005-11, Vol.285 (1), p.249-260

2005

Volltextzugriff (PDF)

Superconductor-insulator transition controlled by annealing in Ga implanted Si

Applied physics letters, 2012-06, Vol.100 (26), p.262602

2012

Volltextzugriff (PDF)

Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films

Semiconductors (Woodbury, N.Y.), 2017-09, Vol.51 (9), p.1240-1246

2017

Volltextzugriff (PDF)

Heavily Ga-doped germanium layers produced by ion implantation and flash lamp annealing: Structure and electrical activation

Journal of applied physics, 2010-03, Vol.107 (5)

2010

Volltextzugriff (PDF)

XAFS Spectroscopy Study of Microstructure and Electronic Structure of Heterosystems Containing Si/GeMn Quantum Dots

Journal of experimental and theoretical physics, 2019-02, Vol.128 (2), p.303-311

2019

Volltextzugriff (PDF)

On-chip superconductivity via gallium overdoping of silicon

Applied physics letters, 2010-11, Vol.97 (19), p.192505-192505-3

2010

Volltextzugriff (PDF)

Superconducting films fabricated by high-fluence Ga implantation in Si

Physical review. B, Condensed matter and materials physics, 2011-06, Vol.83 (21), Article 214504

2011

Volltextzugriff (PDF)

Formation of dendritic crystal structures in thin silicon films on silicon dioxide by carbon ion implantation and high intensity large area flash lamp irradiation

Journal of crystal growth, 2014-02, Vol.388, p.70-75

2014

Volltextzugriff (PDF)

Superconductivity in thin-film germanium in the temperature regime around 1 K

Superconductor science & technology, 2010-03, Vol.23 (3), p.034007-034007

2010

Volltextzugriff (PDF)

Anomalous wear-out phenomena of europium-implanted light emitters based on a metal-oxide-semiconductor structure

Journal of applied physics, 2009-12, Vol.106 (12), p.123103-123103-10

2009

Volltextzugriff (PDF)

Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions

Semiconductors (Woodbury, N.Y.), 2013-05, Vol.47 (5), p.606-611

2013

Volltextzugriff (PDF)

Diffusion of In Atoms in SiO.sub.2 Films Implanted with As.sup.+ Ions

Semiconductors (Woodbury, N.Y.), 2021-03, Vol.55 (3), p.289

2021

Volltextzugriff (PDF)

Density and structural changes in SiC after amorphization and annealing

Applied physics letters, 1997-06, Vol.70 (26), p.3531-3533

1997

Volltextzugriff (PDF)

Layer morphology and Al implant profiles after annealing of supersaturated, single-crystalline, amorphous, and nanocrystalline SiC

Journal of applied physics, 2004-09, Vol.96 (5), p.2841-2852

2004

Volltextzugriff (PDF)

SIMS investigation of Ge(x)(4H-SiC)(1-x) solid solutions synthesized by Ge-ion implantation up to x=0.2

Materials science forum, 2009-01, Vol.615-617, p.465-468

2009

Volltextzugriff (PDF)

Ion beam synthesis of 4H-(Si1-x C1-y )Gex +y solid solutions

Physica status solidi. A, Applications and materials science, 2007-04, Vol.204 (4), p.998-1001

2007

Volltextzugriff (PDF)

Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002, Vol.186 (1), p.287-291

2002

Volltextzugriff (PDF)

1 – 25 von 182

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(130)
Mit Volltextzugriff
(168)

Publikationsform

Sprache

Englisch
(165)
Japanisch
(15)
Deutsch
(11)

Erscheinungsjahr

n.n

Thema

Science & Technology
(103)
Physics
(98)
Physical Sciences
(91)
Technology
(57)
Physics, Applied
(53)
Materials Science
(45)
Physics, Condensed Matter
(35)
Materials Science, Multidisciplinary
(34)
Annealing
(27)
Ion Implantation
(24)
Exact Sciences And Technology
(18)
Silicon
(17)
Nuclear Science & Technology
(16)
Instruments & Instrumentation
(15)
Physics, Atomic, Molecular & Chemical
(15)
Physics, Nuclear
(15)
Physics And Astronomy
(13)
Germanium
(11)
Condensed Matter: Structure, Mechanical And Thermal Properties
(9)
Flash Lamp Annealing
(9)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions

Superconducting state in a gallium-doped germanium layer at low temperatures

Ex situ n+ doping of GeSn alloys via non-equilibrium processing

Silicon films with gallium-rich nanoinclusions: from superconductor to insulator

Diffusion and Interaction of In and As Implanted into SiO2 Films

In situ ohmic contact formation for n-type Ge via non-equilibrium processing

High-fluence Ga-implanted silicon—The effect of annealing and cover layers

Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots

Modelling of flash-lamp-induced crystallization of amorphous silicon thin films on glass

Superconductor-insulator transition controlled by annealing in Ga implanted Si

Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films

Heavily Ga-doped germanium layers produced by ion implantation and flash lamp annealing: Structure and electrical activation

XAFS Spectroscopy Study of Microstructure and Electronic Structure of Heterosystems Containing Si/GeMn Quantum Dots

On-chip superconductivity via gallium overdoping of silicon

Superconducting films fabricated by high-fluence Ga implantation in Si

Formation of dendritic crystal structures in thin silicon films on silicon dioxide by carbon ion implantation and high intensity large area flash lamp irradiation

Superconductivity in thin-film germanium in the temperature regime around 1 K

Anomalous wear-out phenomena of europium-implanted light emitters based on a metal-oxide-semiconductor structure

Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions

Diffusion of In Atoms in SiO.sub.2 Films Implanted with As.sup.+ Ions

Density and structural changes in SiC after amorphization and annealing

Layer morphology and Al implant profiles after annealing of supersaturated, single-crystalline, amorphous, and nanocrystalline SiC

SIMS investigation of Ge(x)(4H-SiC)(1-x) solid solutions synthesized by Ge-ion implantation up to x=0.2

Ion beam synthesis of 4H-(Si1-x C1-y )Gex +y solid solutions

Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in silicon

Suchergebnisse filtern